Substrate processing apparatus

Abstract

A substrate processing apparatus according to one aspect of the present invention comprises: a process module including a process chamber, a first gas supply unit, and a first exhaust unit; a transfer module including a transfer chamber, a second gas supply unit, and a second exhaust unit; and a load lock module including a load lock chamber, a third gas supply unit, and a third exhaust unit; and a control unit that continuously supplies gas through the first gas supply unit, the second gas supply unit, and the third gas supply unit when transferring a substrate to the load lock module, the transfer module, and the process module, and controls valves provided in the first exhaust unit, the second exhaust unit, and the third exhaust unit to independently control the amount of gas discharged inside the process module, the transfer module, and the load lock module.

Description

Technology Field

[0001] The present invention relates to semiconductor manufacturing, and more specifically, to a substrate processing apparatus. Background Technology

[0002] A thin film of a semiconductor device is formed on a semiconductor substrate by various vapor deposition methods. A substrate processing apparatus for performing such methods typically includes a process module comprising a process chamber, a gas line for supplying various gases into the process chamber, a gas injection unit for injecting various gases into the process chamber, a substrate support unit for mounting a substrate, and an exhaust unit for exhausting various gases from the process chamber. Furthermore, such a substrate processing apparatus can form a cluster system in which a plurality of process modules are coupled to a transfer module, and the transfer module is coupled to a load lock module.

[0003] In this substrate processing device, the substrate is swapped while being transferred between the load lock module, the transfer module, and the process module. During substrate swapping, backflow of particles and gases may occur into the process module, the transfer module, and the load lock module, and airflow fluctuations inside the process chamber may occur during the initial stage of opening the exhaust line using the valve provided in the exhaust section. The problem to be solved

[0004] The present invention aims to solve the aforementioned problems by providing a substrate processing apparatus capable of controlling the backflow of particles and gases during substrate swapping and mitigating airflow fluctuations inside the process chamber. However, these objectives are exemplary and do not limit the scope of the present invention. means of solving the problem

[0005] A substrate processing device according to one aspect of the present invention for solving the above problem comprises: a process module including a process chamber, a first gas supply unit, and a first exhaust unit; a transfer module including a transfer chamber, a second gas supply unit, and a second exhaust unit; a load lock module including a load lock chamber, a third gas supply unit, and a third exhaust unit; and a control unit that continuously supplies gas through the first gas supply unit, the second gas supply unit, and the third gas supply unit when transferring a substrate to the load lock module, the transfer module, and the process module, and controls valves provided in the first exhaust unit, the second exhaust unit, and the third exhaust unit to independently control the amount of gas discharged inside the process module, the transfer module, and the load lock module.

[0006] In the above substrate processing device, the control unit can control the continuous supply of purge gas to the process chamber through the first gas supply unit when transferring the substrate to the load lock module, the transfer module, and the process module.

[0007] In the above substrate processing apparatus, the control unit can control the opening of the slot valve of the process chamber when the pressure condition of the transfer module and the pressure condition of the process module are mutually compared during substrate transfer in the transfer module and the process module, and when the set pressure condition is achieved, control the opening angle of the throttle valve provided in the first exhaust part of the process module to be maintained at the first opening angle of the throttle valve when the pressure condition is achieved.

[0008] In the above substrate processing device, the set pressure condition may be such that the pressure of the transfer module is higher than the pressure of the process module.

[0009] In the above substrate processing device, the control unit can control the opening angle of the throttle valve provided in the first exhaust part of the process module to be maintained at the first opening angle during substrate transfer in the transfer module and the process module, and then, as a ramping step, to be maintained at a second opening angle greater than the first opening angle.

[0010] In the above substrate processing device, the control unit can, when transferring a substrate in the transfer module and the process module, maintain the opening angle of the throttle valve provided in the first exhaust section of the process module at the second opening angle, and then control the opening angle of the throttle valve provided in the first exhaust section of the process module in conjunction with the pressure of the process module and the pressure of the transfer module so that the pressure of the transfer module is higher than the pressure of the process module.

[0011] In the above substrate processing device, the control unit can control at least one roughing valve among the roughing valve provided in the second exhaust unit and the roughing valve provided in the third exhaust unit when transferring the substrate to the load lock module, the transfer module and the process module. Effects of the invention

[0012] According to a substrate processing apparatus of one embodiment of the present invention as described above, particle generation can be suppressed by controlling the flow of particles and gas flowing backward during substrate swapping and mitigating airflow fluctuations inside the process chamber. Of course, the scope of the present invention is not limited by these effects. Brief explanation of the drawing

[0013] FIG. 1 is a schematic diagram illustrating the configuration of a substrate processing device according to one embodiment of the present invention. FIG. 2 is a schematic diagram illustrating the gas flow in a substrate processing apparatus according to one embodiment of the present invention. FIG. 3 is a drawing illustrating a part of a process module and a transfer module in a substrate processing apparatus according to one embodiment of the present invention. FIG. 4 is a diagram illustrating the flow of purge gas within a process chamber while a substrate is being transported in a substrate processing device according to one embodiment of the present invention. FIG. 5 is a graph illustrating the pressure fluctuation pattern of the process module and the transfer module while the substrate is being transferred in a substrate processing device according to one embodiment of the present invention. FIG. 6 is a flowchart illustrating the operation configuration of a substrate processing device according to one embodiment of the present invention. Figure 7 is a diagram showing the results of confirming the particle reduction pattern in a substrate processing apparatus according to an experimental example of the present invention. Specific details for implementing the invention

[0014] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0015] The embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation.

[0016] FIG. 1 is a schematic diagram illustrating the configuration of a substrate processing device according to one embodiment of the present invention, FIG. 2 is a schematic diagram illustrating the gas flow in a substrate processing device according to one embodiment of the present invention, FIG. 3 is a diagram illustrating a part of a process module and a transfer module in a substrate processing device according to one embodiment of the present invention, and FIG. 4 is a diagram illustrating the flow of purge gas in a process chamber while a substrate is being transferred in a substrate processing device according to one embodiment of the present invention.

[0017] Referring to FIGS. 1 to 4, the substrate processing device (1000) may include at least one load lock module (300), a transfer module (200), and at least one process module (100).

[0018] The process module (100) includes a process chamber (110), a first gas supply unit (174) capable of supplying gas to the process chamber (110), and a first exhaust unit (118) configured to exhaust gas from the process chamber (110) to the outside. The transfer module (200) includes a transfer chamber (210), a second gas supply unit (274) capable of supplying gas to the transfer chamber (210), and a second exhaust unit (218) configured to exhaust gas from the transfer chamber (210) to the outside. The load lock module (300) includes a load lock chamber (310), a third gas supply unit (374) capable of supplying gas to the load lock chamber (310), and a third exhaust unit (318) configured to exhaust gas from the load lock chamber (310) to the outside.

[0019] Load lock chambers (300) can be installed between the outside of an atmospheric pressure environment and a transfer module (200) in a vacuum environment. The load lock chambers (300) can communicate with the outside in an atmospheric pressure environment to allow the substrate (S) to be brought in from the outside, and can communicate with the transfer module (200) in a vacuum environment to allow the transfer module (200) and the substrate (S) to be swapped.

[0020] An equipment front-end module (EFEM, 400) for handling a substrate (S) under atmospheric pressure may be installed outside the load lock chambers (300). An air robot (432) for transporting the substrate (S) may be installed in this equipment front-end module (400). The equipment front-end module (400) is positioned between the load lock chambers (300) and the substrate transport container (FOUP, 500) so that the substrate (S) can be transported between them using the air robot (432). In some embodiments, the equipment front-end module (400) may be omitted from the substrate processing device (1000), and the substrate (S) may be loaded into the load lock chambers (300) in other ways, such as by using an in-factory facility.

[0021] A transfer module (200) may be positioned between process modules (100) and load lock modules (300). For example, the transfer module (200) may have a polygonal shape, and the process modules (100) and load lock modules (300) may be positioned on each side of the polygonal shape. The number of process chambers (100) and load lock chambers (300) in the substrate processing device (1000) may be appropriately selected and may be interpreted as not limiting the scope of this embodiment. A transfer robot (252) for transferring a substrate (S) may be installed in the transfer chamber (25). This transfer robot (252) may be used to transfer a substrate (S) between process chambers (100) or to transfer a substrate (S) between process chambers (100) and load lock chambers (300).

[0022] A plurality of process modules (100) may be connected to a transfer module (200). A process module (100) includes a process chamber (110), a first gas supply unit (174) capable of supplying gas to the process chamber (110), a gas injection unit (120), a substrate support unit (130), and a first exhaust unit (118) configured to exhaust gas from the process chamber (110) to the outside.

[0023] A process chamber (110) may define a reaction space (112) for processing a substrate (S) inside. For example, the process chamber (110) may be configured to maintain airtightness and may be connected to a vacuum pump (116) via an exhaust pipe (114) to discharge processing gas within the reaction space (112) and to control the vacuum level within the reaction space (112). A first exhaust unit (118) configured to exhaust gas from the process chamber (110) to the outside may include the exhaust pipe (114) and the vacuum pump (116) described above.

[0024] The process chamber (110) may be provided in various shapes and may include, for example, a side wall portion defining the reaction space (112) and a cover portion located on the top of the side wall portion, for example, a top lead.

[0025] In some embodiments, the process chamber (110) may be connected to a transfer module (200). The process chamber (110) may be formed with an inlet / outlet for swapping the transfer module (200) and the substrate (S), and a gate (113) for opening and closing the inlet / outlet. The movement of the gate (113) for opening and closing the inlet / outlet may be implemented by turning on / off a slot valve connected to the gate (113).

[0026] The transfer module (200) can be used as a buffer chamber when loading a substrate (S) into the process chamber (110) or unloading a substrate (S) from the process chamber (110).

[0027] A gas injection unit (120) may be coupled to the process chamber (110) to supply a processing gas (purge gas (SG1) or process gas) supplied from outside the process chamber (110) to the reaction space (112). For example, the gas injection unit (120) may be coupled to the process chamber (110) so as to face the substrate support (130). The gas injection unit (120) may be installed on the upper part of the process chamber (110) to inject the processing gas onto a substrate (S) placed on the substrate support (130). For example, the gas injection unit (120) may include an inlet through which the processing gas is introduced via a gas pipe (172), a blocker plate for dispersing the processing gas that has passed through the inlet, and a distribution plate for injecting the processing gas into the reaction space (112).

[0028] In some embodiments, the gas injection unit (120) may have various forms, such as a shower head or a nozzle. If the gas injection unit (120) is in the form of a shower head, the gas injection unit (120) may be coupled to the process chamber (110) in a manner that partially covers the upper part of the process chamber (110). For example, the gas injection unit (120) may be coupled to the cover or side wall of the process chamber (110).

[0029] A substrate support (130) can be coupled to a process chamber (110) to support a substrate (S) within a reaction space (112). For example, the substrate support (130) can be installed in the process chamber (110) opposite to a gas injection unit (120).

[0030] The top plate shape of the substrate support (130) generally corresponds to the shape of the substrate (S), but is not limited thereto and can be provided in various shapes larger than the substrate (S) so as to stably seat the substrate (S). In one example, the shaft of the substrate support (130) may be connected to an external motor (not shown) to enable vertical movement, and in this case, a bellows tube (not shown) may be connected to maintain airtightness. Furthermore, since the substrate support (130) is configured to seat the substrate (S) thereon, it may be referred to as a substrate seating part, a susceptor, etc.

[0031] In one embodiment of the present invention, the substrate processing device (1000) can be used as a thin film deposition device for depositing a thin film on a substrate (S), for example, a chemical vapor deposition (CVD) device, a plasma enhanced chemical vapor deposition (PECVD) device, or an atomic layer deposition (ALD) device.

[0032] Two main methods of atomic layer deposition (ALD) processes are used: spatial division and time division. The spatial division method of the atomic layer deposition process is a method in which a substrate support (130) on which multiple substrates are mounted rotates while processing gases are continuously sprayed, and thus has excellent throughput. The time division method of the atomic layer deposition process is a method in which processing gases are sprayed onto the substrate at different times, and thus has excellent uniformity.

[0033] When the process module (100) implements a space-divided atomic layer deposition process, the first exhaust unit (118) that exhausts the processing gas within the reaction space (112) and controls the vacuum level within the reaction space (112) may include the first exhaust unit (118) that exhausts the source gas, the reaction gas, and / or the purge gas.

[0034] A substrate processing device (1000) according to one embodiment of the present invention may include a control unit (600) that continuously supplies gas through the first gas supply unit, the second gas supply unit, and the third gas supply unit when transferring a substrate to the process module (100), the transfer module (200), and the load lock module (300), and controls valves provided in the first exhaust unit, the second exhaust unit, and the third exhaust unit to independently control the amount of gas discharged inside the process module, the transfer module, and the load lock module.

[0035] The control unit (600) can control whether gas is supplied, the gas flow rate, and the operation of the exhaust unit to reduce particle generation when swapping the substrate (S) between the load lock module (300), the transfer module (200), and the process chamber (110). In some embodiments, the control unit (600) may operate as a central processing unit (CPU) that controls the overall operation of the substrate processing device (1000).

[0036] In the substrate processing device (1000), when transferring a substrate to the process module (100), transfer module (200), and load lock module (300), gas can be continuously supplied through the first gas supply unit (174), the second gas supply unit (274), and the third gas supply unit (374). For example, when swapping substrates, gas can be continuously supplied through the second gas supply unit (274) to form an over pressure flow atmosphere in the transfer chamber (210), and gas can be continuously supplied through the third gas supply unit (374) to form an over pressure flow atmosphere in the load lock chamber (310). Furthermore, when swapping substrates, purge gas can be continuously supplied through the first gas supply unit (174) to the process chamber (110). For example, when the atomic layer deposition process cycle is repeated multiple times in the process module (100), the step of continuously supplying purge gas into the process chamber (110) through the first gas supply unit (174) can be continuously performed during the period between the completion of one cycle and the start of the next subsequent cycle.

[0037] Furthermore, the gas discharge volume inside the process module, the transfer module, and the load lock module can be independently controlled by controlling the valves provided in the first exhaust section (118), the second exhaust section (218), and the third exhaust section (318) in the substrate processing device (1000).

[0038] The first exhaust section (118) may include a throttle valve (T / V (1)) and a roughing valve (R / V (1)). Additionally, the second exhaust section (218) may include a roughing valve (R / V (3)), and the third exhaust section (318) may include a roughing valve (R / V (4)).

[0039] The control unit (600) can control at least one roughing valve among the roughing valve (R / V (3)) provided in the second exhaust unit (218) and the roughing valve (R / V (4)) provided in the third exhaust unit (318) when transferring a substrate to the load lock module (300), the transfer module (200), and the process module (100). For example, when transferring a substrate to the load lock module (300), the transfer module (200), and the process module (100), the control unit can control both the roughing valve (R / V (3)) provided in the second exhaust unit (218) and the roughing valve (R / V (4)) provided in the third exhaust unit (318) to be opened.

[0040] By introducing the above-described configuration, the purge gas within the process module (100) is continuously flowed during substrate swapping, and the roughing valves of the transfer module (200) and the load lock module (300) are opened to form independent gas flows, thereby suppressing the phenomenon of particles and gas flowing back from the process module (100) through the transfer module (200) to the load lock module (300).

[0041] In the following, it is explained that when swapping substrates, the opening angle of the throttle valve constituting the process module (100) can be changed from a position control method to a pressure control method to prevent sudden pressure changes.

[0042] In this specification, the pressure of the process module may include the pressure within the process chamber, the pressure of the transfer module may include the pressure within the transfer chamber, and the pressure of the load lock module may include the pressure within the load lock chamber.

[0043] FIG. 5 is a graph illustrating the pressure fluctuation pattern of the process module and the transfer module while the substrate is being transferred in a substrate processing device according to one embodiment of the present invention.

[0044] Referring to FIGS. 1 to 5, in a substrate processing apparatus (1000) according to one embodiment of the present invention, a control unit (600) can control the opening of a slot valve of the process chamber (110) when a set pressure condition is achieved by comparing the pressure condition of the transfer module (200) and the pressure condition of the process module (100) when transferring a substrate in the transfer module (200) and the process module (100), and can control the opening angle of a throttle valve (T / V (1)) provided in the first exhaust unit (118) of the process module (100) to be maintained at the first opening angle of the throttle valve (T / V (1)) when the pressure condition is achieved (first step).

[0045] The first opening angle of the above throttle valve (T / V(1)) may refer to the opening angle of the above throttle valve (T / V(1)) just before opening the slot valve by satisfying the above set pressure condition.

[0046] The above set pressure condition may be such that the pressure of the transfer module (200) is higher than the pressure of the process module (100). Before opening the slot valve, the gas supply flow rate and exhaust operation of the transfer module (200) and the process module (100) can be adjusted to satisfy the above pressure condition.

[0047] Furthermore, in a substrate processing device (1000) according to one embodiment of the present invention, the control unit (600) can maintain the opening angle of the throttle valve (T / V(1)) provided in the first exhaust unit (118) of the process module (100) at the first opening angle (first step) when transferring a substrate in the transfer module (200) and the process module (100), and then control it to maintain it at a second opening angle greater than the first opening angle as a ramping step (second step). For example, in the second step, the control unit can control the opening angle of the throttle valve (T / V(1)) provided in the first exhaust unit (118) of the process module (100) to maintain it at a second angle that is 10% greater than the first opening angle.

[0048] Furthermore, in a substrate processing device (1000) according to one embodiment of the present invention, the control unit (600) maintains the opening angle of the throttle valve (T / V(1)) provided in the first exhaust unit (118) of the process module (100) at the second opening angle (second step) when transferring a substrate in the transfer module (200) and the process module (100), and then controls the pressure in a pressure control method linked to the pressure of the process module (100) and the pressure of the transfer module (200) without fixing the opening angle of the throttle valve (T / V(1)) provided in the first exhaust unit (118) of the process module (100) at a constant angle so that the pressure of the transfer module (200) is higher than the pressure of the process module (100) (third step).

[0049] The first and second steps described above are configured to control the opening angle of the throttle valve using a position control method, and the third step described above is configured to control it using a pressure control method. When swapping substrates, the opening angle of the throttle valve constituting the process module (100) can be changed from a position control method to a pressure control method to prevent sudden pressure changes. The first step may be performed immediately after opening the slot valve to prevent a sudden change in the opening angle, the third step may be performed to maintain the pressure difference between the transfer module (200) and the process module (100), and the second step may be performed to prevent a sudden change in chamber pressure in the third step.

[0050] FIG. 6 is a flowchart illustrating the operation configuration of a substrate processing device according to an embodiment of the present invention. The operation configuration is implemented in the substrate processing device described above and can be understood through the description thereof.

[0051] Referring to FIGS. 1 to 6, the operation configuration of a substrate processing device according to one embodiment of the present invention is an operation configuration performed in the period before the process (e.g., deposition process or etching process) is finished on a substrate in the process chamber (110) and the process is started on another substrate after the substrate swap is completed. When transferring a substrate to the load lock module (300), transfer module (200), and process module (100), purge gas is continuously supplied to the process chamber (110).

[0052] First, the roughing valve (R / V (4)) provided in the load lock module (300) and the roughing valve (R / V (3)) provided in the transfer module (200) are opened (S1).

[0053] Gas can be continuously supplied through the third gas supply unit (374) to form an over pressure flow atmosphere in the load lock chamber (310) (S2), and gas can be continuously supplied through the second gas supply unit (274) to form an over pressure flow atmosphere in the transfer chamber (210) (S3).

[0054] After the substrate (S) waits (S4) in front of the slot valve, the pressure inside the process chamber (110) is controlled by adjusting the throttle valve (T / V(1)) provided in the process module (100).

[0055] When transferring a substrate between the transfer module (200) and the process module (100), the pressure condition of the transfer module (200) and the pressure condition of the process module (100) are compared to determine whether a set pressure condition is achieved (S6). The set pressure condition may be a condition where the pressure of the transfer module (200) is higher than the pressure of the process module (100). If the set pressure condition is not satisfied (N), the pressure inside the process chamber (110) is readjusted by adjusting the throttle valve (T / V (1)) provided in the process module (100). If the set pressure condition is satisfied, the chamber slot valve is opened (S7). In this case, the opening angle of the throttle valve (T / V (1)) provided in the process chamber (110) maintains the opening angle (first opening angle) of the throttle valve (T / V (1)) immediately before opening the chamber slot valve (first step; S8).

[0056] Subsequently, the opening angle of the throttle valve (T / V(1)) of the process chamber (110) can be maintained at a second opening angle greater than the first opening angle as a ramping step (second step; S9). For example, in the second step (S9), the opening angle of the throttle valve (T / V(1)) provided in the first exhaust section (118) of the process module (100) can be maintained at a second angle greater than the first opening angle by 10%.

[0057] Furthermore, the opening angle of the throttle valve (T / V(1)) provided in the first exhaust section (118) of the process module (100) can be controlled in a pressure control manner linked to the pressure of the process module (100) and the pressure of the transfer module (200) so that the pressure of the transfer module (200) is higher than the pressure of the process module (100) (3rd step; S10). The above-described 1st step (S8) and 2nd step (S9) are configured to adjust the opening angle of the throttle valve in a position control manner, and the above-described 3rd step (S10) is configured to adjust in a pressure control manner. The above pressure control method is a method of dynamically adjusting the opening angle of a throttle valve (T / V(1)) provided in the first exhaust section (118) of the process module (100) so that the pressure of the process module (100) maintains a pressure condition higher than the pressure of the transfer module (200).

[0058] Next, after the substrate swap, the chamber slot valve is closed (S11), and subsequent processes can be performed.

[0059] FIG. 7 is a diagram showing the results of confirming the particle reduction pattern in a substrate processing apparatus according to an experimental example of the present invention. The experimental examples of FIG. 7 applied a process of continuously flowing purge gas within a process module (100) during substrate swapping. However, GROUP 1 corresponds to a case where the third step is performed immediately without performing the first and second steps described above immediately after opening the slot valve, and GROUP 2 corresponds to a case where the first, second, and third steps described above are performed sequentially immediately after opening the slot valve. L / L(Ar sccm) represents the flow rate of Ar gas supplied to the load lock module (300) during substrate swapping, TM(Ar sccm) represents the flow rate of Ar gas supplied to the transfer module (200) during substrate swapping, TM(Bara, Torr) represents the chamber pressure within the transfer module (200) during substrate swapping, PM(Bara, Torr) represents the chamber pressure within the process module (100) during substrate swapping, Delta Prs represents the difference between the pressure of the transfer module (200) and the pressure of the process module (100) just before opening the slot valve during substrate swapping, and L / L(R / V Open) represents whether the roughing valve provided in the exhaust section of the load lock module (300) is open during substrate swapping.

[0060] Referring to FIG. 7, when a substrate swap is performed, the purge gas within the process module (100) is continuously flowed, and the roughing valve of the load lock module (300) is opened to form an independent gas flow. This suppresses the phenomenon of particles and gas flowing back from the process module (100) through the transfer module (200) to the load lock module (300), thereby significantly reducing particle generation.

[0061] Furthermore, by sequentially performing the first, second, and third steps described above immediately after opening the slot valve, the opening angle of the throttle valve constituting the process module (100) during substrate swapping is changed from a position control method to a pressure control method, thereby preventing a sudden change in pressure and confirming that particle generation is significantly reduced.

[0062] Hereinafter, embodiments of the present invention are described with reference to drawings that schematically illustrate ideal embodiments of the present invention. In the drawings, variations of the illustrated shapes may be expected, for example, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the inventive concept should not be interpreted as being limited to specific shapes of the areas illustrated herein, but should include, for example, variations in shape resulting from manufacturing. Explanation of the symbols

[0063] 1000: Substrate processing device 100: Process Module 200: Transfer Module 300: Loadlock Module 600: Control unit

Claims

Claim 1 A process module comprising a process chamber, a first gas supply unit, and a first exhaust unit; a transfer module comprising a transfer chamber, a second gas supply unit, and a second exhaust unit; a load lock module comprising a load lock chamber, a third gas supply unit, and a third exhaust unit; and a control unit that continuously supplies gas through the first gas supply unit, the second gas supply unit, and the third gas supply unit when transferring a substrate to the load lock module, the transfer module, and the process module, and controls valves provided in the first exhaust unit, the second exhaust unit, and the third exhaust unit to independently control the amount of gas discharged inside the process module, the transfer module, and the load lock module. A substrate processing apparatus comprising, wherein the control unit compares the pressure condition of the transfer module and the pressure condition of the process module during substrate transfer in the transfer module and the process module, and when a set pressure condition is achieved, controls the slot valve of the process chamber to open and controls the opening angle of the throttle valve provided in the first exhaust part of the process module to maintain the first opening angle of the throttle valve when the pressure condition is achieved. Claim 2 A substrate processing device according to claim 1, wherein the control unit controls the continuous supply of purge gas to the process chamber through the first gas supply unit during substrate transfer to the load lock module, the transfer module, and the process module. Claim 3 delete Claim 4 A substrate processing apparatus according to claim 1, wherein the set pressure condition is characterized in that the pressure of the transfer module is higher than the pressure of the process module. Claim 5 A substrate processing apparatus according to claim 1, wherein the control unit controls the opening angle of a throttle valve provided in a first exhaust part of the process module to be maintained at the first opening angle during substrate transfer in the transfer module and the process module, and then, as a ramping step, to be maintained at a second opening angle greater than the first opening angle. Claim 6 A substrate processing apparatus according to claim 5, wherein the control unit, when transferring a substrate in the transfer module and the process module, maintains the opening angle of a throttle valve provided in the first exhaust section of the process module at the second opening angle, and then controls the opening angle of a throttle valve provided in the first exhaust section of the process module in conjunction with the pressure of the process module and the pressure of the transfer module so that the pressure of the transfer module is higher than the pressure of the process module. Claim 7 A substrate processing apparatus comprising: a process module including a process chamber, a first gas supply unit, and a first exhaust unit; a transfer module including a transfer chamber, a second gas supply unit, and a second exhaust unit; a load lock module including a load lock chamber, a third gas supply unit, and a third exhaust unit; and a control unit that continuously supplies gas through the first gas supply unit, the second gas supply unit, and the third gas supply unit when transferring a substrate to the load lock module, the transfer module, and the process module, and controls valves provided in the first exhaust unit, the second exhaust unit, and the third exhaust unit to independently control the amount of gas discharged inside the process module, the transfer module, and the load lock module; wherein the control unit controls at least one roughing valve among a roughing valve provided in the second exhaust unit and a roughing valve provided in the third exhaust unit when transferring a substrate to the load lock module, the transfer module, and the process module.

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