Method for manufacturing a semiconductor device, die bonding film, and dicing-die bonding integrated adhesive sheet

Abstract

A die bonding film for bonding a semiconductor chip and a support member for mounting the semiconductor chip is disclosed. The die bonding film has a breaking elongation of 5% or less at -15°C. In addition, the die bonding film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the total content of the epoxy resin and the epoxy resin curing agent is 10 mass% or more and less than 30 mass% based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer. The die bonding film has a breaking elongation of 5% or less at -15°C.

Description

Technology Field

[0001] The present invention relates to a method for manufacturing a semiconductor device, a die bonding film, and a dicing-die bonding integrated adhesive sheet. Background Technology

[0002] As a method for manufacturing semiconductor devices, the back-side attachment method of a semiconductor wafer is generally used. The back-side attachment method of a semiconductor wafer involves attaching a die bonding film and a dicing tape to the back side of a semiconductor wafer, and then cutting a portion of the semiconductor wafer, the die bonding film, and the dicing tape during a dicing process. For example, a method is proposed in which a die bonding film is attached to a dicing tape and then attached to a semiconductor wafer (see, for example, Patent Documents 1 to 4).

[0003] However, in order to increase memory capacity per package, the number of stacked chips in a package has recently been increasing. Accordingly, it is being considered to make the thickness of semiconductor wafers thinner through processes such as back grinding, and for example, semiconductor wafers with a thickness of 30 μm or less are being manufactured. When semiconductor wafers are made thinner, they become prone to cracking during the dicing process, which can lead to a significant decrease in manufacturing efficiency.

[0004] As a method for dividing a relatively thin semiconductor wafer, for example, a method of dividing the semiconductor wafer (stealth dicing) is known by irradiating a laser light inside the semiconductor wafer on a cutting line to form a modified layer, and then expanding the outer periphery (see, for example, Patent Document 5). In stealth dicing, an improvement in manufacturing efficiency can be expected in that it has the effect of reducing defects such as chipping even when the thickness of the semiconductor wafer is relatively thin.

[0005] An expandable semiconductor wafer processing tape is disclosed as a dicing-die bonding integrated adhesive sheet used in such stealth dicing, which is used when the adhesive layer is divided along the chip by expanding (see, for example, Patent Document 6). Prior art literature

[0006] Patent Document 1: Japanese Published Patent Application No. 2002-226796 Patent Document 2: Japanese Published Patent Application No. 2002-158276 Patent Document 3: Japanese Published Patent Application No. Hei 02-032181 Patent Document 4: International Published Patent Application No. 04 / 109786 Patent Document 5: Japanese Published Patent Application No. 2003-338467 Patent Document 6: Japanese Published Patent Application No. 2011-216508 The problem to be solved

[0007] However, in the dicing and die-bonding integrated adhesive sheet, the die-bonding film is typically flexible and elastic, so there is a problem that the die-bonding film is difficult to separate when the base film is expanded.

[0008] Accordingly, the main objective of the present invention is to provide a die bonding film with excellent cutting properties and a method for manufacturing a semiconductor device using the same. means of solving the problem

[0009] Conventionally, it was known that in order to improve the splitting performance of a dicing and die-bonding integrated adhesive sheet, the increase in stress caused by thermal shrinkage of the substrate film of the dicing tape was controlled (see, for example, Patent Document 6 above). Under these circumstances, the inventors of the present invention, after careful investigation, discovered that the elongation at break of the die-bonding film affects the splitting performance, and thus completed the present invention.

[0010] One aspect of the present invention relates to a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device comprises the steps of: preparing a dicing-die bonding integrated adhesive sheet having, in this order, an adhesive layer made of a die bonding film having a fracture elongation of 5% or less at -15°C, a pressure-sensitive adhesive layer, and a substrate film; preparing a semiconductor wafer and forming a modification layer on the semiconductor wafer; attaching the surface of the adhesive layer of the dicing-die bonding integrated adhesive sheet to the semiconductor wafer; expanding the substrate film to reorganize the semiconductor wafer and the adhesive layer to produce a semiconductor chip with the adhesive layer attached; picking up the semiconductor chip with the adhesive layer attached from the pressure-sensitive adhesive layer; and attaching the semiconductor chip with the adhesive layer attached to a support substrate for mounting the semiconductor chip through the adhesive layer. The die bonding film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the total content of the epoxy resin and the epoxy resin curing agent is 10 mass% or more and less than 30 mass% based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer.

[0011] In the die bonding film, the die bonding film is heat-pressed onto a wiring substrate and cured at 170°C for 3 hours, and the cured product of the die bonding film may have a die shear strength of 0.7 MPa or more at 250°C.

[0012] The die bonding film may further contain a silane coupling agent.

[0013] The silane coupling agent may be a silane coupling agent represented by the following general formula (1).

[0014] [Chemical Formula 1]

[0015]

[0016] [In general formula (1), R is an alkoxy group and n is an integer from 1 to 3.]

[0017] The die bonding film may further contain inorganic fillers. The content of the inorganic filler may be 25 mass% or more based on the total amount of the die bonding film.

[0018] The content of the epoxy group-containing (meth)acrylic copolymer may be 60 mass% or less based on the total amount of the die bonding film.

[0019] Another aspect of the present invention relates to a die bonding film for bonding a semiconductor chip and a support member that mounts the semiconductor chip. The die bonding film has a breaking elongation of 5% or less at -15°C. In addition, the die bonding film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the total content of the epoxy resin and the epoxy resin curing agent is 10 mass% or more and less than 30 mass% based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer.

[0020] Another aspect of the present invention relates to a dicing and die-bonding integrated adhesive sheet. The dicing and die-bonding integrated adhesive sheet comprises, in this order, an adhesive layer formed of the die-bonding film described above, a pressure-sensitive adhesive layer, and a substrate film. Effects of the invention

[0021] According to the present invention, a die bonding film with excellent cutting properties and a method for manufacturing a semiconductor device using the same are provided. A die bonding film of several shapes is also excellent in terms of die shear strength and embedding properties. Furthermore, according to the present invention, a dicing-die bonding integrated adhesive sheet using such a die bonding film is provided. Brief explanation of the drawing

[0022] FIG. 1 is a schematic cross-sectional view showing one embodiment of a semiconductor device. FIG. 2 is a schematic cross-sectional view for explaining one embodiment of a method for manufacturing a semiconductor device, and FIG. 2 (a), (b), (c), (d), and (e) are schematic cross-sectional views representing each process. FIG. 3 is a schematic cross-sectional view for explaining an embodiment of a method for manufacturing a semiconductor device, and FIG. 3 (f), (g), (h), and (i) are schematic cross-sectional views representing each process. FIG. 4 is a schematic cross-sectional view showing one embodiment of a dicing and die-bonding integrated adhesive sheet. Specific details for implementing the invention

[0023] Hereinafter, embodiments of the present invention will be described with appropriate reference to the drawings. However, the present invention is not limited to the following embodiments. In the following embodiments, the components (including steps, etc.) are not mandatory unless specifically stated otherwise. The sizes of the components in each drawing are conceptual, and the relative relationships of sizes between components are not limited to those shown in each drawing.

[0024] The same applies to the numerical values ​​and their ranges in this specification, and this does not limit the invention. In this specification, numerical ranges indicated by "~" represent a range that includes the numerical values ​​described before and after "~" as the minimum and maximum values, respectively. In numerical ranges described stepwise in this specification, an upper or lower limit value described in one numerical range may be substituted with an upper or lower limit value of another numerical range described stepwise. Furthermore, in numerical ranges described in this specification, an upper or lower limit value of said numerical range may be substituted with a value shown in the examples.

[0025] In this specification, (meth)acrylate means acrylate or the corresponding methacrylate. The same applies to other similar expressions such as (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0026] [Semiconductor device]

[0027] FIG. 1 is a schematic cross-sectional view showing an embodiment of a semiconductor device. In the semiconductor device (100) shown in FIG. 1, a semiconductor chip (Wa) is bonded to a support substrate (60) for mounting a semiconductor chip via an adhesive layer (30a) (or a cured product of the adhesive layer (30a)). The semiconductor chip (Wa) is electrically connected to the support substrate (60) for mounting a semiconductor chip by a wire bond (70). The semiconductor chip (Wa) is resin-sealed by a resin sealant (80) on the surface (60a) of the support substrate (60) for mounting a semiconductor chip. A solder ball (90) may be formed on the side opposite to the surface (60a) of the support substrate (60) for mounting a semiconductor chip for electrical connection with an external substrate (motherboard).

[0028] As for the semiconductor chip, general semiconductor chips such as ICs, LSIs, and VLSIs can be used.

[0029] As a support substrate for mounting a semiconductor chip, for example, a lead frame having a die pad, a ceramic substrate, an organic substrate, etc., can be used without being limited to the substrate material. Examples of ceramic substrates include alumina substrates and aluminum nitride substrates. Examples of organic substrates include an FR-4 substrate in which glass cloth is impregnated with epoxy resin, a BT substrate in which bismaleimide-triazine resin is impregnated, and a polyimide film substrate using a polyimide film as a substrate.

[0030] The wiring provided on the support substrate for mounting the semiconductor chip may be any one of single-sided wiring, double-sided wiring, or multilayer wiring, and, if necessary, through holes or non-through holes electrically connected to the support substrate for mounting the semiconductor chip may be provided. Additionally, if the wiring is disposed outside the semiconductor device, a protective resin layer may be provided.

[0031] [Method for manufacturing a semiconductor device (semiconductor package)]

[0032] FIGS. 2 and FIGS. 3 are schematic cross-sectional views for illustrating an embodiment of a method for manufacturing a semiconductor device. A method for manufacturing a semiconductor device according to one embodiment comprises: a process of preparing a dicing-die bonding integrated adhesive sheet having, in this order, an adhesive layer made of a die bonding film having a fracture elongation of 5% or less at -15°C, an adhesive layer, and a substrate film (dicing-die bonding integrated adhesive sheet preparation process); a process of preparing a semiconductor wafer and forming a modification layer on the semiconductor wafer (modification layer formation process); a process of attaching the surface of the adhesive layer of the dicing-die bonding integrated adhesive sheet to the semiconductor wafer (wafer lamination process); a process of expanding the substrate film to form the semiconductor wafer and the adhesive layer, thereby producing a semiconductor chip with the adhesive layer attached (dicing process); a process of picking up the semiconductor chip with the adhesive layer attached from the adhesive layer (pickup process); and a process of attaching the semiconductor chip with the adhesive layer attached to a support substrate via the adhesive layer (semiconductor chip bonding process).

[0033] <Preparation Process for Integrated Dicing and Die Bonding Adhesive Sheets>

[0034] FIG. 4 is a schematic cross-sectional view showing one embodiment of a dicing and die-bonding integrated adhesive sheet. The dicing and die-bonding integrated adhesive sheet (1) comprises an adhesive layer (30), a pressure-sensitive adhesive layer (20), and a substrate film (10) in this order.

[0035] (Adhesive layer)

[0036] The die bonding film constituting the adhesive layer (30) is thermosetting and can go through a semi-cured (B stage) state and become a fully cured (C step) state after curing treatment.

[0037] The die bonding film has a breaking elongation of 5% or less at -15°C. By using such a die bonding film, the die bonding film tends to be easily split when expanded. The breaking elongation of the die bonding film at -15°C may be 4.5% or less, 4% or less, or 3.5% or less. The breaking elongation of the die bonding film at -15°C may be, for example, 0.5% or more. Furthermore, in this specification, the breaking elongation at -15°C refers to a value measured by the method described in the examples.

[0038] The die bonding film contains an epoxy resin (hereinafter referred to as "Component (A)"), an epoxy resin curing agent (hereinafter referred to as "Component (B)"), and an epoxy group-containing (meth)acrylic copolymer (hereinafter referred to as "Component (C)"). The die bonding film may further contain an inorganic filler (hereinafter referred to as "Component (D)") and may further contain a silane coupling agent (hereinafter referred to as "Component (E)"). By adjusting the types and amounts of these components, the elongation at break of the die bonding film at -15°C can be adjusted.

[0039] (A) Components: Epoxy resin

[0040] (A) is a component that has the property of curing by forming three-dimensional bonds between molecules upon heating, etc., and exhibits an adhesive action after curing. (A) may be used without special restrictions as long as it has an epoxy group within its molecule. (A) may have two or more epoxy groups within its molecule.

[0041] (A) Examples of components include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F novolak type epoxy resin, stilbene type epoxy resin, triazine backbone containing epoxy resin, fluorene backbone containing epoxy resin, triphenolmethane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl-aralkyl type epoxy resin, naphthalene type epoxy resin, dicyclopentadiene type epoxy resin, polyfunctional phenols, diglycidyl ether compounds of polycyclic aromatics such as anthracene, etc. These may be used individually or in combination of two or more types. Among these, component (A) may be a cresol novolak-type epoxy resin, a bisphenol-type epoxy resin, or a dicyclopentadiene-type epoxy resin, in terms of the tacking properties and flexibility of the film.

[0042] (A) The epoxy equivalent of component A is not particularly limited, but may be 90 to 300 g / eq, 110 to 290 g / eq, or 130 to 280 g / eq. When the epoxy equivalent of component A is in this range, the elongation at break of the die bonding film tends to be adjusted to be lower. As a result, the final die bonding film tends to be more prone to stress concentration and tends to be prone to splitting when expanded.

[0043] (A) The content of component A may be 1 to 30 mass% based on the total amount of the die bonding film. If the content of component A is 1 mass% or more based on the total amount of the die bonding film, the degree of crosslinking of the film increases, the bulk strength improves, and the film tends to be less likely to peel off from the substrate, and if it is 30 mass% or less, the thermal hysteresis resistance and the storage stability of the film tend to improve. (A) The content of component A may be 2 mass% or more, 3 mass% or more, or 5 mass% or more based on the total amount of the die bonding film, or 20 mass% or less, 15 mass% or less, or 10 mass% or less.

[0044] (B) Component: Epoxy resin curing agent

[0045] (B) The component may be, for example, a phenolic resin that can be a curing agent for epoxy resin. As long as the phenolic resin has phenolic hydroxyl groups in its molecule, it may be used without any particular restrictions. Examples of phenol resins include, for instance, novolak-type phenol resins obtained by condensing or co-condensing compounds having aldehyde groups such as formaldehyde with phenols such as phenol, cresol, resosin, catechol, bisphenol A, bisphenol F, phenylphenol, and aminophenol, and / or naphthols such as α-naphthol, β-naphthol, and dihydroxynaphthalene, under an acidic catalyst; phenol aralkil resins, naphthol aralkil resins, biphenyl aralkil-type phenol resins, and phenyl aralkil-type phenol resins synthesized from phenols such as allylated bisphenol A, allylated bisphenol F, allylated naphthalenediol, phenol novolak, and phenol, and / or naphthols, and dimethoxyparaxylene or bis(methoxymethyl)biphenyl. These may be used individually or in combination of two or more types.

[0046] The hydroxyl group equivalent of the phenol resin may be 40 to 300 g / eq, 70 to 290 g / eq, or 100 to 280 g / eq. If the hydroxyl group equivalent of the phenol resin is 40 g / eq or more, the storage modulus of the film tends to be improved, and if it is 300 g / eq or less, it is possible to prevent trouble caused by foaming, outgassing, etc.

[0047] The ratio of the epoxy equivalent of component (A) to the hydroxyl equivalent of the phenolic resin (epoxy equivalent of component (A) / hydroxyl equivalent of the phenolic resin) may be 0.30 / 0.70~0.70 / 0.30, 0.35 / 0.65~0.65 / 0.35, 0.40 / 0.60~0.60 / 0.40, or 0.45 / 0.55~0.55 / 0.45 in terms of curability. If the said equivalent ratio is 0.30 / 0.70 or higher, more sufficient curability tends to be obtained. If the said equivalent ratio is 0.70 / 0.30 or lower, it is possible to prevent the viscosity from becoming excessively high and to obtain more sufficient fluidity.

[0048] (B) The content of component (B) may be 1 to 30 mass% based on the total amount of the die bonding film. If the content of component (B) is 1 mass% or more based on the total amount of the die bonding film, the degree of crosslinking of the film increases, the bulk strength improves, and the film tends to be less likely to peel off from the substrate, and if it is 30 mass% or less, the heat hysteresis and the storage stability of the film tend to improve. (B) The content of component (B) may be 2 mass% or more, 3 mass% or more, or 5 mass% or more based on the total amount of the die bonding film, or 20 mass% or less, 15 mass% or less, or 10 mass% or less.

[0049] The total content of component (A) and component (B) may be 25 mass% or less based on the total amount of the die bonding film. The total content of component (A) and component (B) may be 20 mass% or less, 18 mass% or less, or 15 mass% or less based on the total amount of the die bonding film. The total content of component (A) and component (B) may be 3 mass% or more, 5 mass% or more, or 7 mass% or more based on the total amount of the die bonding film.

[0050] (C) Component: (Met)acrylic copolymer containing epoxy groups

[0051] A (meth)acrylic copolymer refers to a polymer containing constituent units derived from (meth)acrylic acid esters. An epoxy group-containing (meth)acrylic copolymer is a polymer containing constituent units derived from (meth)acrylic acid esters having epoxy groups as constituent units. In addition, the (meth)acrylic copolymer may be an acrylic rubber, such as a copolymer of (meth)acrylic acid esters and acrylonitrile. These may be used individually or in combination of two or more types.

[0052] (C) Examples of commercially available products of the component include “SG-70L”, “SG-708-6”, “WS-023 EK30”, “SG-280 EK23”, “HTR-860P-3”, “HTR-860P-3CSP”, and “HTR-860P-3CSP-3DB” (all manufactured by Nagase Chemtex Co., Ltd.).

[0053] (C) The glass transition temperature (Tg) of component (C) may be -50 to 50°C or -30 to 20°C. If the Tg of the acrylic resin is -50°C or higher, the tacking properties of the die bonding film are lowered, so the handling properties tend to be improved. If the Tg of the acrylic resin is 50°C or lower, the fluidity of the adhesive composition when forming the die bonding film tends to be more sufficiently secured. Here, the glass transition temperature (Tg) of component (C) refers to a value measured using a DSC (Differential Scanning Calorimeter) (e.g., "Thermo Plus 2" manufactured by Rigaku Co., Ltd.).

[0054] (C) The weight-average molecular weight (Mw) of component (C) may be 50,000 to 1.2 million, 100,000 to 1.2 million, or 300,000 to 900,000. If the weight-average molecular weight of component (C) is 50,000 or more, the film-forming properties tend to be superior. If the weight-average molecular weight of component (C) is 1.2 million or less, the fluidity of the adhesive composition when forming a die-bonding film tends to be superior. In addition, the weight-average molecular weight (Mw) is a value calculated using a calibration curve based on standard polystyrene and measured by gel permeation chromatography (GPC).

[0055] (C) The measuring device, measurement conditions, etc. for the weight-average molecular weight (Mw) of the component are as follows.

[0056] Pump: L-6000 (Manufactured by Hitachi Seisakusho Co., Ltd.)

[0057] Column: A column connecting Gelpack GL-R440 (manufactured by Hitachi Kasei Corporation), Gelpack GL-R450 (manufactured by Hitachi Kasei Corporation), and Gelpack GL-R400M (manufactured by Hitachi Kasei Corporation) (each 10.7mm (diameter) × 300mm) in this order

[0058] Eluent: Tetrahydrofuran (hereinafter referred to as "THF")

[0059] Sample: Solution of 120 mg of sample dissolved in 5 mL of THF

[0060] Flow rate: 1.75 mL / min

[0061] The total content of component (A) and component (B) is 10 mass% or more and less than 30 mass% based on the total amount of component (A), component (B), and component (C). If the total content of component (A) and component (B) is less than 30 mass% based on the total amount of component (A), component (B), and component (C), the elongation at break of the die bonding film tends to be adjusted to be low. Consequently, the die bonding film obtained at the end tends to be more prone to stress concentration and tends to be prone to splitting when expanded. If the total content of component (A) and component (B) is 10 mass% or more based on the total amount of component (A), component (B), and component (C), the die bonding film tends to exhibit higher die shear strength in the cured product of the die bonding film after heat-pressing the die bonding film onto a wiring substrate and curing at 170°C for 3 hours. The total content of component (A) and component (B) may be 28 mass% or less, 25 mass% or less, 22 mass% or less, or 20 mass% or less, based on the total amount of component (A), component (B), and component (C), or 12 mass% or more or 15 mass% or more.

[0062] The content of component (C) may be greater than 70 mass% and less than or equal to 90 mass% based on the total amount of component (A), component (B), and component (C). If the content of component (C) exceeds 70 mass% based on the total amount of component (A), component (B), and component (C), there is a tendency for the step difference of the substrate to be easily filled when the die bonding film is heat-pressed onto the wiring substrate and molded. If the content of component (C) is less than or equal to 90 mass% based on the total amount of component (A), component (B), and component (C), there is a tendency to adjust the elongation at break of the die bonding film to be low. Consequently, the final die bonding film obtained tends to be more prone to stress concentration and tends to be prone to splitting when expanded. The content of component (C) may be 72 mass% or more, 75 mass% or more, 78 mass% or more, or 80 mass% or more, based on the total amount of component (A), component (B), and component (C), or 88 mass% or less or 85 mass% or less.

[0063] (C) The content of component (C) may be 60 mass% or less based on the total amount of the die bonding film. If the content of component (C) is 60 mass% or less based on the total amount of the die bonding film, the elongation at break of the die bonding film tends to be adjusted to be lower. As a result, the final die bonding film tends to be more prone to stress concentration and tends to be prone to splitting when expanded. (C) The content of component (C) may be 58 mass% or less based on the total amount of the die bonding film. (C) The content of component (C) may be 35 mass% or more, 40 mass% or more, or 45 mass% or more based on the total amount of the die bonding film.

[0064] (D) Ingredient: Inorganic filler

[0065] (D) As components, examples include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whiskers, boron nitride, crystalline silica, amorphous silica, etc. These may be used individually or in combination of two or more types. Among these, component (D) may be silica.

[0066] (D) If the average particle size of component (D) is relatively large, the elongation at break of the die bonding film tends to be adjusted to be lower. Consequently, the final die bonding film tends to be more prone to stress concentration and to break easily when expanded. The average particle size of component (D) may be 0.1 to 1.0 μm. The average particle size of component (D) may be 0.2 μm or more, 0.3 μm or more, or 0.4 μm or more, or 0.9 μm or less, 0.8 μm or less, or 0.7 μm or less. Here, the average particle size refers to a value obtained by converting from the BET specific surface area.

[0067] (D) The shape of the component may be spherical. Also, spherical is a concept that includes a true sphere.

[0068] (D) The component may be surface-treated with a surface treatment agent for compatibility with the surface, solvent, other components, etc., and for adhesive strength. Examples of surface treatment agents include silane-based coupling agents. Examples of functional groups of silane-based coupling agents include vinyl groups, (meth)acryloyl groups, epoxy groups, mercapto groups, amino groups, diamino groups, alkoxy groups, ethoxy groups, etc.

[0069] (D) The content of component (D) may be 25 mass% or more based on the total amount of the die bonding film. If the content of component (D) is 25 mass% or more based on the total amount of the die bonding film, the elongation at break of the die bonding film tends to be adjusted to be lower. As a result, the final die bonding film tends to be more prone to stress concentration and tends to be prone to splitting when expanded. (D) The content of component (D) may be 26 mass% or more or 28 mass% or more based on the total amount of the die bonding film. (D) The content of component (D) may be 50 mass% or less, 45 mass% or less, or 40 mass% or less based on the total amount of the die bonding film. In addition, when the die bonding film contains component (D), the total content of components (A), (B), and (C) may be 75 mass% or less, 74 mass% or less, or 72 mass% or less based on the total amount of the die bonding film, or 50 mass% or more, 55 mass% or more, or 60 mass% or more.

[0070] The mass ratio of component (D) to component (C) (mass of component (D) / mass of component (C)) may be 0.30 or higher, 0.35 or higher, 0.40 or higher, 0.45 or higher, or 0.50 or higher. If the mass ratio of component (D) to component (C) (mass of component (D) / mass of component (C)) is 0.30 or higher, the elongation at break of the die bonding film tends to be adjusted to be low. Consequently, the final die bonding film tends to be more prone to stress concentration and tends to be prone to splitting when expanded. The mass ratio of component (D) to component (C) (mass of component (D) / mass of component (C)) may be, for example, 0.80 or lower, 0.70 or lower, or 0.60 or lower.

[0071] (E) Ingredient: Silane coupling agent

[0072] By including component (E) in the die bonding film, the interfacial bonding between heterogeneous components tends to be enhanced. Component (E) may be a silane coupling agent represented by the following general formula (1).

[0073] [Chemical Formula 2]

[0074]

[0075] In general formula (1), R is an alkoxy group such as a methoxy group or an ethoxy group, and n is an integer from 1 to 3.

[0076] Examples of silane coupling agents represented by general formula (1) include anilinopropyl trimethoxysilane, anilinopropyl trimethoxysilane, anilinoethyl trimethoxysilane, anilinoethyl trimethoxysilane, anilinomethyl trimethoxysilane, anilinomethyl trimethoxysilane, etc.

[0077] (E) The component may include a silane coupling agent other than the silane coupling agent represented by general formula (1). Examples of such silane-based coupling agents include vinyltrichlorosilane, vinyltriethoxysilane, vinyltris(β-methoxyethoxy)silane, γ-methacryloxypropyltrimethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, vinyltriacetoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-(N,N-dimethyl)aminopropyltrimethoxysilane, γ-(N,N-Diethyl)aminopropyltrimethoxysilane, γ-(N,N-Dibutyl)aminopropyltrimethoxysilane, γ-(N-Methyl)anilinopropyltrimethoxysilane, γ-(N-Ethyl)anilinopropyltrimethoxysilane, γ-(N,N-Dimethyl)aminopropyltriethoxysilane, γ-(N,N-Diethyl)aminopropyltriethoxysilane, γ-(N,N-Dibutyl)aminopropyltriethoxysilane, γ-(N-Methyl)anilinopropyltriethoxysilane, γ-(N-Ethyl)anilinopropyltriethoxysilane, γ-(N,N-Dimethyl)aminopropylmethyldimethoxysilane, γ-(N,N-Diethyl)aminopropylmethyldimethoxysilane, Examples include γ-(N,N-dibutyl)aminopropylmethyldimethoxysilane, γ-(N-methyl)anilinopropylmethyldimethoxysilane, γ-(N-ethyl)anilinopropylmethyldimethoxysilane, N-(trimethoxysilylpropyl)ethylenediamine, N-(dimethoxymethylsilylisopropyl)ethylenediamine, methyltrimethoxysilane, dimethyldimethoxysilane, methyltriethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilane, vinyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-ureidopropyltriethoxysilane, etc. These may be used individually or in combination of two or more.

[0078] (E) The content of component (E) may be 0.01 to 3.0 mass% based on the total amount of the die bonding film. When the content of component (E) is in this range, the interfacial bonding between heterogeneous components tends to be higher.

[0079] (E) The mass ratio of the silane coupling agent represented by general formula (1) to the total amount of component (E) (mass of the silane coupling agent represented by general formula (1) / total mass of component (E)) may be 0.5 or more, 0.6 or more, 0.7 or more, 0.8 or more, or 0.85 or more.

[0080] The die bonding film may further contain a curing accelerator (hereinafter referred to as "component (F)").

[0081] (F) Ingredient: Curing accelerator

[0082] By including component (F) in the die bonding film, adhesion and shortening of process time tend to be more compatible. Examples of component (F) include imidazoles and their derivatives, organic phosphorus compounds, secondary amines, tertiary amines, quaternary ammonium salts, etc. One of these may be used alone or in combination of two or more. Among these, component (F) may be imidazoles and their derivatives from the perspective of reactivity.

[0083] Examples of imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, etc. These may be used individually or in combination of two or more types.

[0084] (F) The content of component (F) may be 0.001 to 1 mass% based on the total amount of the die bonding film. When the content of component (F) is in this range, it tends to improve storage stability while achieving both adhesion and a reduction in processing time.

[0085] Other ingredients

[0086] The die bonding film may further contain, as other components, antioxidants, rheology control agents, leveling agents, etc. The content of these components may be 0.01 to 3 mass% based on the total amount of the die bonding film.

[0087] A die bonding film can be produced by forming an adhesive composition containing the above-described components (A) to (C), and, if necessary, components (D) to (F) and other components into a film shape. Such a die bonding film can be formed by applying the adhesive composition to a support film. The adhesive composition may be used as a varnish of the adhesive composition diluted with a solvent. When using a varnish of the adhesive composition, the die bonding film can be formed by applying the varnish of the adhesive composition to the support film and removing the solvent by heating and drying.

[0088] The solvent is not particularly limited as long as it is capable of dissolving components other than component (D). Examples of solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, p-cymene, etc.; aliphatic hydrocarbons such as hexane, heptane, etc.; cyclic alkanes such as methylcyclohexane, etc.; cyclic ethers such as tetrahydrofuran, 1,4-dioxane, etc.; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 4-hydroxy-4-methyl-2-pentanone, etc.; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, γ-butyrolactone, etc.; carbonate esters such as ethylene carbonate, propylene carbonate, etc. Examples include amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. These may be used individually or in combination of two or more. Among these, the solvent may be toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, or cyclohexanone in terms of solubility and boiling point. The concentration of solid components in the varnish of the adhesive composition may be 10 to 80 mass% based on the total mass of the varnish of the adhesive composition.

[0089] The varnish of the adhesive composition can be prepared by mixing and kneading components (A) to (C), and, if necessary, components (D) to (F), other components, and a solvent. In addition, the order of mixing and kneading of each component is not particularly limited and can be set appropriately. Mixing and kneading can be performed by appropriately combining dispersers such as a conventional stirrer, a blaster, a 3-roll mill, a ball mill, or a bead mill. After preparing the varnish of the adhesive composition, air bubbles in the varnish may be removed by vacuum degassing, etc.

[0090] There are no particular restrictions on the support film, and examples include films such as polytetrafluoroethylene, polyethylene, polypropylene, polymethylpentene, polyethylene terephthalate, and polyimide. The thickness of the support film may be, for example, 10 to 200 μm or 20 to 170 μm.

[0091] As a method for applying a varnish of an adhesive composition to a support film, known methods may be used, such as knife coating, roll coating, spray coating, gravure coating, bar coating, curtain coating, etc. The conditions for heat drying are not particularly limited as long as the solvent used volatilizes sufficiently, but for example, it may be 50 to 200°C for 0.1 to 90 minutes.

[0092] The thickness of the die bonding film can be appropriately adjusted according to the application. The thickness of the die bonding film may be 3 to 40 μm, 5 to 35 μm, or 7 to 30 μm.

[0093] The die bonding film may have a die shear strength of 0.7 MPa or higher at 250°C in the cured product of the die bonding film after heat-pressing the die bonding film onto a wiring substrate and curing it at 170°C for 3 hours. If the die shear strength at 250°C is 0.7 MPa or higher, delamination between the die bonding film and the substrate during substrate transport and foreign matter mixing between the semiconductor wafer and the die bonding film during molding can be prevented. The die shear strength at 250°C may be 0.8 MPa or higher, 1.0 MPa or higher, or 1.2 MPa or higher. The upper limit of the die shear strength at 250°C is not particularly limited, but, for example, may be 3 MPa or lower.

[0094] The obtained die bonding film can be used as is as an adhesive layer (30).

[0095] (Adhesive layer and substrate film)

[0096] The adhesive layer (20) and the substrate film (10) may utilize a laminate, i.e., a dicing tape, in which the adhesive layer (20) is provided on the substrate film (10).

[0097] The adhesive layer (20) may be a layer that is cured by high-energy rays or heat (i.e., capable of controlling adhesive strength), a layer that is cured by high-energy rays, or a layer that is cured by ultraviolet rays. The adhesive constituting the adhesive layer may be an adhesive commonly used in the field of dicing tape. The adhesive may be appropriately selected and used as an adhesive whose adhesive strength to the adhesive layer (30) is reduced by irradiation with high-energy rays.

[0098] The base film (10) may be a base film commonly used in the field of dicing tapes. The base of the base film (10) is not particularly limited as long as it can be expanded in the dicing process, but for example, polyolefins such as crystalline polypropylene, amorphous polypropylene, high-density polyethylene, medium-density polyethylene, low-density polyethylene, ultra-low-density polyethylene, low-density linear polyethylene, polybutene, polymethylpentene; ethylene-vinyl acetate copolymer; ionomer resin; ethylene-(meth)acrylic acid copolymer; ethylene-(meth)acrylic acid ester (random, alternating) copolymer; ethylene-butene copolymer; ethylene-hexene copolymer; polyuretaine; Examples include polyesters such as polyethylene terephthalate and polyethylene naphthalate, polycarbonate, polyimide, polyetheretherketone, polyimide, polyetherimide, polyamide, all-aromatic polyamide, polyphenylsulfide, aramide (paper), glass, glass cloth, fluoropolymer, polyvinyl chloride, polyvinylidene chloride, cellulose-based resin, silicone resin, etc. Among these, the substrate of the base film (10) may be polypropylene, polyethylene-polypropylene random copolymer, polyethylene-polypropylene block copolymer, ethylene-vinyl acetate copolymer, ionomer resin, or ethylene-(meth)acrylic acid copolymer in terms of properties such as Young's modulus, stress relaxation, and melting point.

[0099] By laminating the adhesive layer of the die bonding film and the dicing tape, a dicing and die bonding integrated adhesive sheet (1) can be obtained, having the adhesive layer (30), the adhesive layer (20), and the base film (10) in this order.

[0100] Modification layer formation process

[0101] First, a semiconductor wafer (W1) with a thickness H1 is prepared. The thickness H1 of the semiconductor wafer (W1) forming the modification layer may exceed 35 μm. Next, a protective film (2) is attached to one main surface of the semiconductor wafer (W1) (see FIG. 2 (a)). The surface to which the protective film (2) is attached may be the circuit surface of the semiconductor wafer (W1). The protective film (2) may be a back grind tape used for back grinding of the semiconductor wafer. Next, a modified layer (4) is formed by irradiating a laser light inside a semiconductor wafer (W1) (see FIG. 2(b)), and a semiconductor wafer (W2) having the modified layer (4) is produced by performing back grinding and polishing on the side opposite to the side where the protective film (2) of the semiconductor wafer (W1) is attached (see FIG. 2(c)). The thickness H2 of the obtained semiconductor wafer (W2) may be 35 μm or less.

[0102] Wafer Lamination Process

[0103] Next, the adhesive layer (30) of the dicing / die bonding integrated adhesive sheet (1) is placed in a predetermined device. Subsequently, the dicing / die bonding integrated adhesive sheet (1) is attached to the main surface (Ws) of the semiconductor wafer (W2) with the adhesive layer (30) interposed (see FIG. 2 (d)), and the protective film (2) of the semiconductor wafer (W2) is peeled off (see FIG. 2 (e)).

[0104] Dicing Process

[0105] Next, under cooling conditions, the semiconductor wafer (W2) is divided into a modified layer (4) by expanding the base film (10). By doing so, the semiconductor wafer (W2) and the adhesive layer (30) are modified to produce a semiconductor chip with an adhesive layer attached (see FIG. 3 (f)). The condition for expanding the base film (10) may be a cooling condition of 0°C or lower.

[0106] UV Irradiation Process

[0107] Regarding the adhesive layer (20), ultraviolet light may be irradiated as needed (see (g) in FIG. 3). If the adhesive in the adhesive layer (20) is cured by ultraviolet light, the adhesive layer (20) is cured, which can reduce the adhesive strength between the adhesive layer (20) and the adhesive layer (30). For ultraviolet irradiation, ultraviolet light with a wavelength of 200 to 400 nm may be used. The ultraviolet irradiation conditions are: illuminance: 30 to 240 mW / cm² 2 It may be adjusted so that the irradiation dose is 200~500 mJ.

[0108] Pickup Process

[0109] Next, by expanding the base film (10), the diced semiconductor chip (50) with the adhesive layer attached is separated from one another, pushed up from the base film (10) side with a needle (42), and the semiconductor chip (50) with the adhesive layer attached is sucked in by a suction collet (44) and picked up from the adhesive cured layer (20ac) (see (h) of FIG. 3). Additionally, the semiconductor chip (50) with the adhesive layer attached has a semiconductor chip (Wa) and an adhesive layer (30a). The semiconductor chip (Wa) is a semiconductor wafer (W2) divided by dicing, and the adhesive layer (30a) is an adhesive layer (30) divided by dicing. The adhesive cured layer (20ac) is an adhesive cured layer in which the adhesive layer is cured and divided by dicing. The adhesive cured layer (20ac) may remain on the base film (10) when the semiconductor chip (50) with the adhesive layer attached is picked up. In the pickup process, it is not strictly necessary to expand, but expanding can further improve pickup performance.

[0110] Semiconductor Chip Bonding Process

[0111] Next, after picking up the semiconductor chip (50) with the adhesive layer attached, the semiconductor chip (50) with the adhesive layer attached is attached to a support substrate (60) for mounting the semiconductor chip by heat pressing with the adhesive layer (30a) interposed therebetween (see (i) of FIG. 3). A plurality of semiconductor chips (50) with adhesive layers attached may be attached to the support substrate (60) for mounting the semiconductor chip. The adhesive layer (30a) may be cured by heating at 120 to 150°C for 0.5 to 6 hours, for example.

[0112] The semiconductor device shown in FIG. 1 can be manufactured by a manufacturing method further comprising the above process, a process of electrically connecting a semiconductor chip (Wa) and a support substrate (60) for mounting the semiconductor chip by a wire bond (70), and a process of resin sealing the semiconductor chip (Wa) on the surface (60a) of the support substrate (60) for mounting the semiconductor chip using a resin sealant (80).

[0113] [Die Bonding Film]

[0114] A die bonding film of one embodiment is intended to bond a semiconductor chip and a support member that mounts the semiconductor chip. The die bonding film has a breaking elongation of 5% or less at -15°C. The die bonding film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the total content of the epoxy resin and the epoxy resin curing agent is 10 mass% or more and less than 30 mass% based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer. The components and content, etc. included in the die bonding film are the same as the components and content, etc. exemplified in the adhesive layer described above. Therefore, redundant descriptions are omitted here.

[0115] [Integrated Adhesive Sheet for Dicing and Die Bonding]

[0116] A dicing and die-bonding integrated adhesive sheet of one embodiment comprises, in this order, an adhesive layer made of the die-bonding film described above, a pressure-sensitive adhesive layer, and a substrate film.

[0117] Examples

[0118] The present invention will be explained in more detail below with reference to examples. However, the present invention is not limited to these examples.

[0119] Production of Die Bonding Film

[0120] A varnish of the adhesive composition was prepared according to the following procedure. The types and contents (solid content) of each component are as shown in Table 1. First, (A) epoxy resin, (B) epoxy resin curing agent, (D) inorganic filler, and (E) silane coupling agent were mixed, and cyclohexanone was added to this mixture and stirred. Subsequently, (C) an epoxy group-containing (meth)acrylic copolymer and (F) a curing accelerator were added, and a varnish of the adhesive composition was obtained by vacuum degassing.

[0121] In addition, each component in Table 1 is as follows.

[0122] (A) Components: Epoxy resin

[0123] (A1) Cresol novolak type epoxy resin (manufactured by Nittetsu Chemical & Materials Co., Ltd., trade name "YDCN-700-10", epoxy equivalent: 210 g / eq)

[0124] (B) Component: Epoxy resin curing agent

[0125] (B1) Phenol-aralkyl type phenol resin (Mitsui Chemicals, Inc., Trade name "Milex XLC-LL", Softening point: 77℃, Hydroxyl equivalent: 176g / eq)

[0126] (B2) Biphenyl-aralkyl type phenolic resin (manufactured by Nippon Kayaku Co., Ltd., trade name "KAYAHARD GPH-103", softening point: 99~106℃, hydroxyl equivalent: 220~240g / eq)

[0127] (C) Component: (Met)acrylic copolymer containing epoxy groups

[0128] (C1) Acrylic rubber (manufactured by Nagase Chemtex Co., Ltd., trade name "HTR-860P-3", weight average molecular weight: 800,000, glass transition point: -13℃, butyl acrylate:ethyl acrylate:acrylonitrile:glycidyl methacrylate = 39.4:29.3:30.3:3.0 (mass ratio))

[0129] (D) Ingredient: Inorganic filler

[0130] (D1) Silica filler (manufactured by Admatex Co., Ltd., trade name "SC2050", average particle size 0.5μm, spherical silica including true spherical particles)

[0131] (D2) Silica filler (manufactured by Admatex Co., Ltd., trade name "YA050", average particle size 0.05μm, spherical silica including true spherical particles)

[0132] (E) Ingredient: Silane coupling agent

[0133] (E1) γ-mercaptopropyltrimethoxysilane (Manufactured by Momentive Performance Materials Japan, Trade Name "A-189")

[0134] (E2) 3-(N-phenyl)aminopropyltrimethoxysilane (anilinopropyltrimethoxysilane) (manufactured by Momentive Performance Materials Japan, trade name "Y9669", silane coupling agent in general formula (1), where R = all methoxy groups and n = 3)

[0135] (E3) Anilinomethyltrimethoxysilane (manufactured by Shin-Etsu Kagaku Kogyo Co., Ltd., trade name "X12-1191", general formula (1), in which R = all methoxy groups and n = 1 silane coupling agent)

[0136] (F) Ingredient: Curing accelerator

[0137] (F1) 1-Cyanoethyl-2-phenylimidazole (manufactured by Shikoku Kasei High School Co., Ltd., trade name "Curezol 2PZ-CN")

[0138] Next, the varnish of the obtained adhesive composition was applied onto a support film, a polyethylene terephthalate (PET) film with a thickness of 38 μm that had undergone release treatment. The applied varnish was heated and dried at 90°C for 5 minutes and at 130°C for 5 minutes. In this way, die bonding films of Examples 1 to 3 and Comparative Examples 1 and 2, having the thickness shown in Table 1 and in a semi-cured (B-stage) state, were obtained on the support film.

[0139] <Measurement of elongation at break at -15℃>

[0140] The die-bonding films of Examples 1 to 3 and Comparative Examples 1 and 2 were each cut to a width of 10 mm and a length of 100 mm to produce strip-shaped samples for measuring elongation at break. After peeling off the support film of the measurement samples, they were set on a Tensilon (manufactured by Shimadzu Seisakusho Co., Ltd., product name "UTM-III-500") with a jig distance of 40 mm. Subsequently, they were cooled to -15°C, and the film length was measured while pulling at a speed of 50 mm / min, and the film length at the time of breakage was read. Based on the film length at the time of breakage and the initial film length (40 mm), the elongation at breakage was calculated using the following formula. The results are shown in Table 1.

[0141] Elongation at Break (%) = (Film length at break - Initial film length (40mm)) / Initial film length (40mm) × 100

[0142] <Manufacture of Integrated Adhesive Sheets for Dicing and Die Bonding>

[0143] A dicing tape, which is a laminate of an adhesive layer and a base film, was produced by applying a UV-curable adhesive (thickness: 10 μm) to a base film (thickness: 100 μm, diameter: 370 mm) containing an ionomer resin. Subsequently, a die-bonding film with a support film attached (thickness: Table 1, diameter: 312 mm) of Examples 1 to 3 and Comparative Examples 1 and 2 was prepared, and the UV-curable adhesive of the dicing tape and the die-bonding film were laminated so that they were in contact, thereby producing an integrated dicing-die-bonding adhesive sheet of Examples 1 to 3 and Comparative Examples 1 and 2 having an adhesive layer (die-bonding film), an adhesive layer (UV-curable adhesive), and a base film in this order.

[0144] <Evaluation of Distinction>

[0145] A semiconductor wafer with a thickness of 50 μm and a diameter of 300 mm was prepared. A modified layer was formed on the semiconductor wafer using a stealth dicing laser saw (Disco Co., Ltd., device name "DFL7361") to obtain a semiconductor chip of 4 mm × 12 mm. Subsequently, back grinding was performed using a back grinding device (Disco Co., Ltd., device name "DGP8761") to adjust the thickness of the semiconductor wafer to 25 μm. The support film of the dicing-die bonding integrated adhesive sheet of Examples 1 to 3 and Comparative Examples 1 and 2 was peeled off, and the adhesive layer (die bonding film) of the dicing-die bonding integrated adhesive sheet was attached to the semiconductor wafer with the thickness adjusted to 25 μm by laminating it at 70°C using a laminating device (Disco Co., Ltd., device name "DFM2800"). A semiconductor wafer with an integrated dicing and die-bonding adhesive sheet attached was fixed, and the dicing tape was expanded at -15°C using an expander (manufactured by DISCO Co., Ltd., device name "DDS2300") to reconstitute the adhesive layer and the semiconductor wafer into a 4mm × 12mm semiconductor chip with the adhesive layer attached. At this time, the expand conditions were adjusted so that the expand speed was 100mm / second and the expand amount was 8mm. The reconstituted semiconductor chip was observed, and if both the adhesive layer and the semiconductor wafer were cut simultaneously but the ratio was 90% or more of the total, it was evaluated as "A" for good cutting performance, and if it was less than 90%, it was evaluated as "B" for poor cutting performance. The results are shown in Table 1.

[0146] <Measurement of Die Shear Strength>

[0147] The die shear strength of the die bonding film was measured using the dicing and die bonding integrated adhesive sheets of Examples 1 to 3, which have excellent cutting properties. The semiconductor chip for measuring the die shear strength was prepared as follows. A semiconductor wafer with a thickness of 400 μm was prepared, and the die bonding film side of the dicing and die bonding integrated adhesive sheets of Examples 1 to 3 was laminated onto the semiconductor wafer at a stage temperature of 70°C to produce a dicing sample. The obtained dicing sample was cut using a full auto dicer DFD-6361 (manufactured by DISCO Co., Ltd.). The cutting was performed using a step cut method utilizing two blades, and dicing blades ZH05-SD2000-N1-70-FF and ZH05-SD4000-N1-70-EE (both manufactured by DISCO Co., Ltd.) were used. The cutting conditions were set as follows: blade rotation speed: 4000 rpm, cutting speed: 50 mm / sec, and chip size: 5 mm × 5 mm. The cutting was performed by first cutting to leave approximately 200 μm of the semiconductor wafer, and second cutting to create a notch of approximately 20 μm in the dicing tape. Subsequently, ultraviolet light was irradiated onto an adhesive layer consisting of a UV-curable adhesive to cure the adhesive layer. Next, the semiconductor chip to be picked up was picked up using a pickup collet. For pickup, a total of five pins—one in the center and four at the four corners—were used to push the chip up. The pickup conditions were set to a pushing speed of 20 mm / sec and a pushing height of 450 μm. In this way, the semiconductor chips with attached die bonding films of Examples 1 to 3 were obtained. The obtained semiconductor chips with attached die bonding films of Examples 1 to 3 were subjected to a temperature of 120°C, a pressure of 0.1 MPa, and a time of 1.Under the condition of 0 seconds, a sample of the cured die-bonding film was prepared by pressing it onto a wiring substrate (organic substrate with solder resist attached, solder resist: Taiyo Holdings Co., Ltd., product name "AUS308", irregularities on the substrate: approx. 6 μm) and curing it at 170°C for 3 hours, and the results were measured at a measurement temperature of 250°C using a universal bond tester (manufactured by Nordson Advanced Technology Co., Ltd.). The results are shown in Table 1.

[0148] <Evaluation of Landfill Suitability>

[0149] The embedding ability of the die bonding film was evaluated using the dicing and die bonding integrated adhesive sheets of Examples 1 to 3, which have excellent dicing properties. A semiconductor wafer with a thickness of 75 μm was prepared, and semiconductor chips with the die bonding film attached of Examples 1 to 3 were fabricated in the same manner as the semiconductor chips used for measuring die shear strength, except that the chip size was adjusted to 7.5 mm × 7.5 mm. A sample was prepared by attaching the semiconductor chips with the die bonding film attached of Examples 1 to 3 to a wiring substrate (an organic substrate with solder resist attached, solder resist: Taiyo Holdings Co., Ltd., product name "AUS308", irregularities on the substrate: approximately 6 μm) under conditions of a temperature of 120°C, a pressure of 0.15 MPa, and a time of 1.0 second, and the sample was cured by heating it on a hot plate at 150°C for 6 hours. Subsequently, an evaluation package was fabricated by sealing a semiconductor chip using a mold sealant (manufactured by Hitachi Kasei Co., Ltd., product name "CEL-9700HF") under conditions of 175°C, 6.9 MPa, and 120 seconds. The wiring board of the evaluation package was observed using an ultrasonic microscope to verify the filling ability of irregularities on the substrate. Cases where there were no voids in the irregularities on the substrate were evaluated as "A" for good filling ability, and cases where there were voids were evaluated as "B" for poor filling ability. The results are shown in Table 1.

[0150] [Table 1]

[0151]

[0152] The die bonding films of Examples 1 to 3, which had a breaking elongation of 5% or less at -15℃, exhibited superior splitting performance when expanded compared to the die bonding films of Comparative Examples 1 and 2, which had a breaking elongation of more than 5% at -15℃. In addition, it was found that the die bonding films of Examples 1 to 3 were also excellent in terms of die shear strength and embedding ability.

[0153] As described above, it has been confirmed that the die bonding film of the present invention has excellent cutting performance. Explanation of the symbols

[0154] 1… Integrated adhesive sheet for dicing and die bonding 2… protective film 4… modified layer 10… recording film 20… adhesive layer 20ac… cured adhesive layer 30, 30a… adhesive layer 42… needles 44… Suction Collet 50… Semiconductor chip with adhesive layer attached 70… wire bond 60… Support substrate for mounting semiconductor chips 80… Resin sealant 90… solder ball W1, W2… semiconductor wafer H1… Thickness of the semiconductor wafer (W1) H2… Thickness of the semiconductor wafer (W2) 100… semiconductor device

Claims

Claim 1 A process for preparing a dicing-die bonding integrated adhesive sheet comprising, in this order, an adhesive layer made of a die bonding film having a fracture elongation of 5% or less at -15℃, a pressure-sensitive adhesive layer, and a substrate film; a process for preparing a semiconductor wafer and forming a modification layer on the semiconductor wafer; a process for attaching the surface of the adhesive layer of the dicing-die bonding integrated adhesive sheet to the semiconductor wafer; a process for fabricating a semiconductor chip with an adhesive layer attached by expanding the substrate film to reorganize the semiconductor wafer and the adhesive layer; a process for picking up the semiconductor chip with the adhesive layer attached from the pressure-sensitive adhesive layer; and a process for attaching the semiconductor chip with the adhesive layer attached to a support substrate for mounting the semiconductor chip via the adhesive layer. The die bonding film is a cured product of the die bonding film after heat-pressing the die bonding film onto a wiring substrate and curing it at 170℃ for 3 hours, wherein the die shear strength at 250℃ is 0.7MPa A method for manufacturing a semiconductor device, wherein the die bonding film comprises an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and the die bonding film further comprises an inorganic filler, wherein the content of the inorganic filler is 25 mass% or more based on the total amount of the die bonding film, the content of the epoxy group-containing (meth)acrylic copolymer is 60 mass% or less based on the total amount of the die bonding film, and the total content of the epoxy resin and the epoxy resin curing agent is 10 mass% or more and less than 30 mass% based on the total amount of the epoxy resin, the epoxy resin curing agent, and the epoxy group-containing (meth)acrylic copolymer. Claim 2 delete Claim 3 A method for manufacturing a semiconductor device according to claim 1, wherein the die bonding film further contains a silane coupling agent. Claim 4 A method for manufacturing a semiconductor device according to claim 3, wherein the silane coupling agent is a silane coupling agent represented by the following general formula (1). [Chemical Formula 1] [In general formula (1), R is an alkoxy group and n is an integer from 1 to 3.] Claim 5 A die bonding film for bonding a semiconductor chip and a support member for mounting the semiconductor chip, wherein the elongation at break at -15°C is 5% or less, and in a cured product of said die bonding film obtained by heat-pressing said die bonding film onto a wiring board and curing at 170°C for 3 hours, the die shear strength at 250°C is 0.7 MPa or more, and the film contains an epoxy resin, an epoxy resin curing agent, and an epoxy group-containing (meth)acrylic copolymer, and further contains an inorganic filler, wherein the content of said inorganic filler is 25 mass% or more based on the total amount of the die bonding film, the content of said epoxy group-containing (meth)acrylic copolymer is 60 mass% or less based on the total amount of the die bonding film, and the total content of said epoxy resin and said epoxy resin curing agent is 10 mass% or more and 30 mass% based on the total amount of said epoxy resin, said epoxy resin curing agent, and said epoxy group-containing (meth)acrylic copolymer. Die bonding film less than Claim 6 delete Claim 7 A die bonding film according to claim 5, wherein the die bonding film further contains a silane coupling agent. Claim 8 A die bonding film according to claim 7, wherein the silane coupling agent is a silane coupling agent represented by the following general formula (1). [Chemical Formula 2] [In general formula (1), R is an alkoxy group and n is an integer from 1 to 3.] Claim 9 A dicing-die bonding integrated adhesive sheet comprising, in this order, an adhesive layer made of a die bonding film as described in any one of claims 5, 7, or 8, an adhesive layer, and a base film. Claim 10 delete Claim 11 delete Claim 12 delete Claim 13 delete

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