Apparatus and method for treating substrate

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate using plasma, comprising: a process chamber having a space formed inside; a support member installed in the process chamber and supporting a substrate; and a microwave application device for applying microwaves to the substrate supported by the support member so as to create a plasma environment, wherein the microwave application device may include an auto sliding tuner that automatically slides a reflector plate reflecting the microwave generated from a microwave generator to a first position or a second position using a driving device in a first mode, and automatically slides the reflector plate to a third position or a fourth position in a second mode.

Description

Technology Field

[0001] The present invention relates to a substrate processing apparatus and a substrate processing method, and more specifically, to a substrate processing apparatus and a substrate processing method that processes a substrate using plasma. Background Technology

[0002] Plasma refers to an ionized gaseous state composed of ions, electrons, radicals, etc., generated by very high temperatures, strong electric fields, or RF electromagnetic fields. Semiconductor device manufacturing processes include various processes that utilize plasma.

[0003] Korean Published Patent Application No. 10-2013-0035838 discloses a substrate processing apparatus using plasma. Microwaves generated from a microwave power source are transmitted along a waveguide, some of which are applied to an antenna via a coaxial converter and an internal conductor, and the remaining portion is transmitted to the end of the waveguide via the coaxial converter. The microwaves are reflected at the end of the waveguide and may interfere with the microwaves transmitted to the coaxial converter side.

[0004] For efficient transmission of the generated microwaves, impedance matching control is required, and for this purpose, flexible type waveguides or manual sliding tuners can be used. The problem to be solved

[0005] However, since these conventional flexible type waveguides or manual sliding tuners relied on manual operation, such as direct manual work or direct command input, there were many problems, including plasma instability and arcing in core parts, due to limitations in matching control such as reduced accuracy and precision.

[0006] In particular, conventionally, because the type of gas supplied, internal pressure, applied power intensity, and process time differ for each mode—such as the annealing mode in which a substrate is processed using, for example, hydrogen gas and argon gas inside a single chamber, and the passivation mode in which the equipment is stabilized using, for example, nitrogen gas and argon gas in an empty equipment after processing the substrate—fine, rapid, and precise plasma control is required. However, conventional manual sliding tuners and the like cannot satisfy these conditions, leading to problems such as plasma instability and arcing phenomena becoming more pronounced.

[0007] The present invention aims to solve various problems, including those mentioned above, by providing a substrate processing apparatus and a substrate processing method that enable precise control for each process or mode using an auto-sliding tuner, and prevent plasma instability or arcing phenomena by rapidly responding to changes in impedance inside the process chamber. However, these problems are exemplary and the scope of the present invention is not limited by them. means of solving the problem

[0008] A substrate processing device according to the concept of the present invention for solving the above problem comprises: a process chamber having a space formed inside; a support member installed in the process chamber and supporting a substrate; and a microwave application device that applies microwaves to the substrate supported by the support member so as to create a plasma environment, wherein the microwave application device may include an auto sliding tuner that automatically slides a reflector plate that reflects the microwave generated from a microwave generator to a first position or a second position using a driving device in a first mode, and automatically slides the reflector plate to a third position or a fourth position in a second mode.

[0009] Additionally, according to the present invention, the first mode is a process mode in which a first gas is supplied to the process chamber so that a process can be performed on the substrate, and a first plasma environment is created for a first time with a first power and a first pressure, and the second mode is an equipment stabilization mode in which a second gas is supplied to the process chamber so that equipment stabilization can be performed without the substrate in the process chamber, and a second plasma environment is created for a second time with a second power and a second pressure.

[0010] In addition, according to the present invention, the first mode may be an annealing mode in which the first gas includes hydrogen gas, and the second mode may be a passivation mode in which the second gas includes nitrogen gas.

[0011] Additionally, according to the present invention, the apparatus may further include a control unit that applies a first mode control signal to the auto sliding tuner so that the reflector of the auto sliding tuner can automatically slide to the first position or the second position when at least one of a first gas supply signal, a first power application signal, a first pressure forming signal, and a combination thereof is input, and applies a second mode control signal to the auto sliding tuner so that the reflector of the auto sliding tuner can automatically slide to the third position or the fourth position when at least one of a second gas supply signal, a second power application signal, a second pressure forming signal, and a combination thereof is input.

[0012] Additionally, according to the present invention, the microwave application device may include: a microwave generator that generates the microwave; a first waveguide connected to the microwave generator; a second waveguide extending from the first waveguide and transmitting the microwave to an antenna; a phase converter installed between the first waveguide and the second waveguide and changing the phase of the microwave; and an auto sliding tuner capable of reflecting the reflected wave of the microwave that has passed through the phase converter to the phase converter and moving the reflector back and forth.

[0013] Additionally, according to the present invention, the auto sliding tuner may include: a matched waveguide located on the opposite side of the first waveguide centered on the phase converter; the reflector installed to be movable back and forth on the matched waveguide; and the driving device that receives a control signal from a control unit and moves the reflector back and forth.

[0014] In addition, according to the present invention, the apparatus further includes a measuring unit for measuring the reflected wave of the microwave reflected from the process chamber; and the control unit may apply a first mode control signal or a second mode control signal to the auto sliding tuner depending on the magnitude of the reflected wave measured by the measuring unit.

[0015] In addition, according to the present invention, in the first mode, the first position of the reflector is the position of the annealing plasma ignition mode and the second position is the position of the annealing plasma mode, and in the second mode, the third position of the reflector is the position of the passivation plasma ignition mode and the fourth position may be the position of the passivation plasma mode.

[0016] In addition, according to the present invention, the control unit may apply a substrate unloading control signal that controls the inside of the process chamber to a plasma OFF state between the first mode control signal and the second mode control signal.

[0017] Meanwhile, a substrate processing method according to the concept of the present invention for solving the above problem may include: (a) a step of loading a substrate onto a support inside a process chamber; (b) a step of igniting an annealing plasma by sliding the reflector of the auto sliding tuner to a first position using a control unit; (c) a step of performing an annealing mode while maintaining the annealing plasma by sliding the reflector of the auto sliding tuner to a second position using the control unit; (d) a step of turning off the plasma inside the process chamber and unloading the substrate to the outside of the process chamber; (e) a step of igniting a passivation plasma by sliding the reflector of the auto sliding tuner to a third position using the control unit; and (f) a step of performing a passivation mode while maintaining the passivation plasma by sliding the reflector of the auto sliding tuner to a fourth position using the control unit. Effects of the invention

[0018] According to various embodiments of the present invention as described above, automatic control using an auto sliding tuner is possible, enabling highly precise control for each process or mode. Furthermore, by rapidly responding to changes in impedance within the process chamber, plasma instability or arcing phenomena can be prevented. Additionally, by significantly reducing the Voltage Standing Wave Ratio (VSWR) and Reflect Power, plasma efficiency and stabilization can be greatly improved, and the durability of key components can be greatly increased. Of course, the scope of the present invention is not limited by these effects. Brief explanation of the drawing

[0019] FIG. 1 is a cross-sectional view showing an annealing plasma ignition mode of a substrate processing apparatus according to some embodiments of the present invention. Figure 2 is a cross-sectional view showing the annealing plasma mode of the substrate processing apparatus of Figure 1. Figure 3 is a cross-sectional view showing the passivation plasma ignition mode of the substrate processing device of Figure 1. Figure 4 is a cross-sectional view showing the passivation plasma mode of the substrate processing device of Figure 3. Figure 5 is a graph showing the plasma density by mode over time of the substrate processing device of Figure 1. FIG. 6 is a flowchart illustrating a substrate processing method according to some embodiments of the present invention. Specific details for implementing the invention

[0020] Hereinafter, several preferred embodiments of the present invention will be described in detail with reference to the attached drawings.

[0021] The embodiments of the present invention are provided to more fully explain the invention to those skilled in the art, and the following embodiments may be modified in various different forms, and the scope of the invention is not limited to the following embodiments. Rather, these embodiments are provided to make the disclosure more faithful and complete and to fully convey the spirit of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of explanation.

[0022] The terms used herein are for describing specific embodiments and are not intended to limit the invention. As used herein, the singular form may include the plural form unless the context clearly indicates otherwise. Additionally, as used herein, "comprise" and / or "comprising" specify the presence of the mentioned features, numbers, steps, actions, parts, elements, and / or groups thereof, and do not exclude the presence or addition of one or more other features, numbers, actions, parts, elements, and / or groups.

[0023] Hereinafter, embodiments of the present invention are described with reference to drawings that schematically illustrate ideal embodiments of the present invention. In the drawings, variations of the illustrated shapes may be expected, for example, depending on manufacturing techniques and / or tolerances. Accordingly, embodiments of the inventive concept should not be interpreted as being limited to specific shapes of the areas illustrated herein, but should include, for example, variations in shape resulting from manufacturing.

[0024] FIG. 1 is a cross-sectional view showing an annealing plasma ignition mode of a substrate processing device (100) according to some embodiments of the present invention, FIG. 2 is a cross-sectional view showing an annealing plasma mode of the substrate processing device (100) of FIG. 1, FIG. 3 is a cross-sectional view showing a passivation plasma ignition mode of the substrate processing device (100) of FIG. 1, and FIG. 4 is a cross-sectional view showing a passivation plasma mode of the substrate processing device (100) of FIG. 3.

[0025] First, as illustrated in FIGS. 1 to 4, a substrate processing apparatus (100) according to some embodiments of the present invention may largely include a process chamber (10), a support member (20), and a microwave application device (30).

[0026] For example, the process chamber (10) may be a structure formed by assembling various vertical members, horizontal members, and panel members, etc., so as to have sufficient strength and durability to support various components including the support member (20) and the microwave application device (30), such that a receiving space is formed to accommodate a substrate (1) inside.

[0027] More specifically, for example, the process chamber (10) may include a body (11) and a cover (12). The body (11) may have an open top surface and a space formed inside, and the cover (12) may be placed on the top of the body (11) and may seal the open top surface of the body (11). Here, the inner lower portion of the cover (12) may be formed with a stepped shape so that the upper space has a larger radius than the lower space.

[0028] Additionally, for example, an opening (not shown) may be formed in one side wall of the process chamber (10). The opening may be provided as a passage through which the substrate (1) can enter and exit the process chamber (10). Such an opening may be opened and closed by a door (not shown).

[0029] In addition, for example, process gas can be supplied into the process chamber (10) through a gas supply hole (10a) connected to a gas supply unit (50) on the other side wall of the process chamber (10).

[0030] Additionally, for example, an exhaust hole (10b) may be formed on the bottom surface of the process chamber (10). This exhaust hole (10b) may be connected to an exhaust line (13), and through exhaust via the exhaust line (13), the interior of the process chamber (10) may be maintained at a pressure lower than atmospheric pressure. Furthermore, reaction byproducts generated during the process and gases remaining inside the process chamber (10) may be discharged to the outside through the exhaust line (13).

[0031] Meanwhile, for example, the support member (20) is installed in the process chamber (10) and supports the substrate (1), and may include a support plate (21), a lift pin (not shown), a heater (22), and a support shaft (23).

[0032] Here, the support plate (21) may be formed in the shape of a disc having a constant thickness and a radius larger than that of the substrate (1). The substrate (1) may be placed on the upper surface of the support plate (21). Although not illustrated, a configuration for fixing the substrate (1) may be installed on the support plate (21). The process proceeds with the substrate (1) placed on the upper surface of the support plate (21), and the support plate (21) may be equipped with an electrostatic chuck that fixes the substrate (1) using electrostatic force, or a substrate holder that fixes the substrate (1) by a mechanical clamping method.

[0033] For example, the lift pins may be provided in multiple numbers and may be located in each of the pin holes (not shown) formed in the support plate (21). The lift pins may move up and down in a relative vertical direction along the pin holes and may load the substrate (1) onto the support plate (21) or unload the substrate (1) placed on the support plate (21).

[0034] Additionally, for example, the heater (22) may be installed inside the support plate (21). The heater (22) may be provided as a spiral-shaped coil and may be embedded inside the support plate (21) at uniform intervals. The heater (22) is connected to an external power source (not shown) and can generate heat by resisting the current applied from the external power source. The generated heat is transferred to the substrate (1) through the support plate (21) and can heat the substrate (1) to a constant temperature.

[0035] In addition, for example, the support shaft (23) is located at the bottom of the support plate (21) and can support the support plate (21).

[0036] Meanwhile, for example, the microwave application device (30) is a device that applies microwaves (M1) to the substrate (1) supported by the support member (20) so that a plasma environment can be created, and may include an auto sliding tuner (35) that automatically slides a reflector plate (37) that reflects the microwaves (M1) generated from the microwave generator (31) to a first position (P1) or a second position (P2) using a driving device (38) in a first mode, and automatically slides the reflector plate (37) to a third position (P3) or a fourth position (P4) in a second mode.

[0037] Here, the first mode is a process mode in which a first gas (G1) is supplied to the process chamber (10) so that a process can be performed on the substrate (1), and a first plasma environment is created for a first time with a first power and a first pressure, and the second mode is an equipment stabilization mode (equipment seasoning mode) in which a second gas (G2) is supplied to the process chamber (10) so that equipment stabilization (equipment seasoning) can be performed in the absence of the substrate (1) in the process chamber (10), and a second plasma environment is created for a second time with a second power and a second pressure.

[0038] For example, the first mode may be an annealing mode in which the first gas (G1) comprises hydrogen gas (H2) and argon gas (Ar), has a plasma power of 2000 W to 2600 W, a pressure of 80 mT to 120 mT, and a process time of 50 sec to 70 sec, and the second mode may be a passivation mode in which the second gas (G2) comprises nitrogen gas (N2) and argon gas (Ar), has a plasma power of 2600 W to 3000 W, a pressure of 50 mT to 80 mT, and a process time of 30 sec to 50 sec.

[0039] More specifically, for example, in the first mode, the first position (P1) of the reflector (37) in Fig. 1 is the position of the annealing plasma ignition mode, and the second position (P2) of Fig. 2 is the position of the annealing plasma mode, and in the second mode, the third position (P3) of the reflector (37) in Fig. 3 is the position of the passivation plasma ignition mode, and the fourth position (P4) of Fig. 4 may be the position of the passivation plasma mode.

[0040] As illustrated in FIGS. 1 to 4, a substrate processing apparatus (100) according to some embodiments of the present invention applies a first mode control signal to an auto sliding tuner (35) so that when at least one or more of a first gas supply signal, a first power application signal, a first pressure forming signal, and first time information, or a combination thereof, are input from an equipment control unit (2) or sensors of the process chamber (10), such as a gas sensor, a power sensor, a pressure sensor, a process time sensor, a plasma density sensor, etc., the reflector (37) of the auto sliding tuner (35) can automatically slide to the first position (P1) or the second position (P2); and when at least one or more of a second gas supply signal, a second power application signal, a second pressure forming signal, and second time information, or a combination thereof, are input, the reflector (37) of the auto sliding tuner (35) can slide to the third position (P3) or the It may further include a control unit (40) that applies a second mode control signal to the auto sliding tuner (35) so that it can be automatically slid to position 4 (P4).

[0041] As illustrated in FIGS. 1 to 4, the microwave application device (30) controlled by the control unit (40) may include a microwave generator (31) that generates the microwave (M1), a first waveguide (32) connected to the microwave generator (31), a second waveguide (33) that extends from the first waveguide (32) and transmits the microwave (M1) to an antenna (A), a phase converter (34) installed between the first waveguide (32) and the second waveguide (33) and changes the phase of the microwave (M1), and an auto sliding tuner (35) that reflects the reflected wave (M2) of the microwave (M1) that has passed through the phase converter (34) back and forth to the phase converter (34) and can move the reflector (37) forward and backward.

[0042] Here, the auto sliding tuner (35) may include a matching waveguide (36) located opposite the first waveguide (32) with respect to the phase converter (34), a reflector (37) installed to be movable back and forth on the matching waveguide (36), and a driving device (38) that receives a control signal from a control unit (40) to move the reflector (37) back and forth.

[0043] In addition, the microwave application device (30) may further include a measuring unit (39) that measures the reflected wave (M2) of the microwave (M1) reflected from the process chamber (10), and a matching network (MN) that matches the microwave to a constant frequency.

[0044] Accordingly, the control unit (40) can apply a first mode control signal or a second mode control signal to the auto sliding tuner (35) depending on the magnitude of the reflected wave (M2) measured by the measuring unit (39), and at the same time, when at least one of a first gas supply signal, a first power application signal, a first pressure forming signal, and a first time information, or a combination thereof, is input from the equipment control unit (2) or the sensors of the process chamber (10), the driving device (38) can be operated so that the reflector (37) of the auto sliding tuner (35) can be positioned at any one of the first position (P1), the second position (P2), the third position (P3), and the fourth position (P4).

[0045] Here, the driving device (38) may be an electric actuator, a pneumatic cylinder, a hydraulic cylinder, a motor, a linear motor, etc., capable of moving the reflector (37) back and forth, and various types of power transmission devices such as gear combinations, screw rod combinations, belt and pulley combinations, wire and pulley combinations, chain and sprocket wheel combinations, and rail combinations may be applied.

[0046] Meanwhile, the control unit (40) can apply a substrate unloading control signal to control the inside of the process chamber (10) to a plasma OFF state between the first mode control signal and the second mode control signal.

[0047] Accordingly, the microwave generator (31) can generate microwaves. Here, the first waveguide (32) is connected to the microwave generator (31) and has a passage formed inside, so that the microwave (M1) generated from the microwave generator (31) can be transmitted along the first waveguide (32) to the phase changer (34).

[0048] The second waveguide (33) is extended downward in a vertical direction from the end of the first waveguide (32) so that a passage can be formed inside, and the microwave (M1) whose phase has been changed in the phase converter (34) can be transmitted to the antenna (A) side along the second waveguide (33).

[0049] The above phase converter (34) is installed at the point where the first waveguide (32) and the second waveguide (33) are connected, and can change the phase of the microwave (M1).

[0050] The phase converter (34) may be provided in a cone shape and can propagate the microwave (M1) transmitted from the first waveguide (32) to the second waveguide (33) in a mode-converted state. Here, for example, the phase converter (34) can convert the microwave (M1) from TE mode to TEM mode.

[0051] Here, the matching network (MN) can be installed in the first waveguide (32), and the matching network (MN) can match the microwave (M1) propagating through the first waveguide (32) to a constant frequency.

[0052] The above-mentioned matching waveguide (36) may be positioned opposite the first waveguide (32) with the phase converter (34) at the center, and a passage may be formed inside, and the passage may be connected to the passage of the first waveguide (32) and the passage of the second waveguide (33), and may be installed with the same material as the first waveguide (32) and the second waveguide (33). That is, for example, the above-mentioned matching waveguide (36) may be provided with aluminum material.

[0053] The matched waveguide (36) is installed such that the length of the internal space can be changed, and the reflector (37) can be installed inside the matched waveguide (36) so that it can move back and forth. The reflector (37) is positioned so that one side faces the phase converter (34) to reflect the microwave (M1) transmitted into the matched waveguide (36) after passing through the phase converter (34), and to transmit the reflected wave (M2) to the phase converter (34). Here, the reflector (37) may be formed of the same material as the matched waveguide (36).

[0054] The above driving device (38) is connected to the reflector (37) through a moving rod (R) and can move the reflector (37) back and forth to a first position (P1), a second position (P2), a third position (P3), and a fourth position (P4) along the longitudinal direction of the matched waveguide (36).

[0055] In this way, the position where the microwave (M1) is reflected can be automatically changed according to the mode by moving the reflector (37).

[0056] Accordingly, a portion of the microwave (M1) transmitted along the first waveguide (32) is transmitted to the second waveguide (33) side through the phase converter (34), and the remaining portion is transmitted to the matched waveguide (36) side through the phase converter (34). The reflected wave (M2) of the microwave (M1) reflected by the reflector (37) is transmitted to the phase converter (34) side and may interfere with the microwave (M1) transmitted along the first waveguide (32) to the phase converter (34) side. Depending on the distance between the reflector (37) and the phase converter (34), the microwave (M1) may be interfered with and canceled out or strengthened by the reflected wave (M2). The cancellation or strengthening of the microwave (M1) reduces or increases the magnitude of the microwave transmitted to the antenna (A), thereby affecting the plasma density generated inside the process chamber (10). That is, the magnitude of the microwave (M1) transmitted to the process chamber (10) can vary depending on the position of the reflector (37), and the driving device (38) can adjust the magnitude of the microwave (M1) transmitted to the process chamber (10) by changing the position of the reflector (37).

[0057] Meanwhile, the measuring unit (39) measures the reflected wave (M2) of the microwave (M1) reflected from the process chamber (10), and the magnitude of the reflected wave measured by the measuring unit (39) may be proportional to the plasma density inside the process chamber (10). According to an embodiment, the measuring unit (39) may be installed within the matching network (MN).

[0058] Here, the control unit (40) may also control the driving device (38) so that the position of the reflector (37) is changed according to the magnitude of the reflected wave (M2) measured by the measuring unit (39).

[0059] The antenna (A) is positioned opposite the support plate (21), and the antenna (A) may be provided as a thin disc, and a plurality of slots may be formed spaced apart from each other.

[0060] These slots can be arranged to be combined to form a ring, and the ring can be formed in multiple numbers. Each ring can be provided to have a different diameter. Each ring can be formed concentrically with respect to the center of the antenna (A).

[0061] Therefore, the microwave (M1) can pass through the slots and be transmitted to the dielectric plate (62).

[0062] Additionally, for example, the wave tube (61) is located at the top of the antenna (A) and can be formed in the shape of a disc having a certain thickness. The wave tube (61) may have a radius corresponding to the inner side of the cover (12). The wave tube (61) may be provided with a dielectric material such as alumina or quartz. Accordingly, the microwave (M1) can propagate from the vertical direction to the radial direction of the wave tube (61), and the microwave propagated through the wave tube (61) has its wavelength compressed and can resonate.

[0063] Additionally, for example, the dielectric plate (62) may be located at the bottom of the antenna (A) and may be formed in the shape of a disc having a certain thickness. The dielectric plate (62) may be formed from a dielectric material such as alumina or quartz, and the bottom surface of the dielectric plate (62) may have a concave surface that is indented inward. The bottom surface of the dielectric plate (62) may be located at the same height as the bottom of the cover (12). The side of the dielectric plate (62) may be formed with a step so that the top has a larger radius than the bottom. The top of the dielectric plate (62) may be located at the stepped bottom of the cover (12). The bottom of the dielectric plate (62) may have a smaller radius than the bottom of the cover (12) and may maintain a certain distance from the bottom of the cover (12). Accordingly, the microwave (M1) is radiated into the process chamber (10) through the dielectric plate (62), and the process gas supplied into the process chamber (10) can be excited into a plasma state by the electric field of the radiated microwave.

[0064] For example, the above-mentioned wave tube (61), the above-mentioned antenna (A), and the above-mentioned dielectric plate (62) can be spaced apart from each other, and can also be in close contact with each other.

[0065] Figure 5 is a graph showing the plasma density by mode over time of the substrate processing device (100) of Figure 1.

[0066] Accordingly, as illustrated in FIGS. 1 to 5, the operation process of a substrate processing device (100) according to some embodiments of the present invention is described as follows: First, as illustrated in FIGS. 1 and 5 at the first time (t1), after the substrate (1) is loaded onto the support member (20) inside the process chamber (10), in the annealing plasma ignition mode, the annealing plasma can be ignited by sliding the reflector (37) of the auto sliding tuner (35) to a first position (P1) using the control unit (40).

[0067] At this time, the control unit (40) can receive recipe information from the equipment control unit (2) or receive various signals from sensors such as a gas sensor, power sensor, pressure sensor, process time sensor, and plasma density sensor of the process chamber (10) to automatically drive the driving device (38) and move the reflector (37) to the first position (P1) which is optimal for the annealing plasma ignition mode. Here, the first position (P1) may be applied variably depending on the process environment, etc.

[0068] Next, as shown in the second time (t2) of FIGS. 2 and FIGS. 5, after the annealing plasma is ignited, in the annealing plasma mode, the annealing mode can be performed while maintaining the annealing plasma by sliding the reflector (37) of the auto sliding tuner (35) to a second position (P2) using the control unit (40).

[0069] At this time, the control unit (40) can receive recipe information from the equipment control unit (2) or receive various signals from sensors such as a gas sensor, power sensor, pressure sensor, process time sensor, and plasma density sensor of the process chamber (10) to automatically drive the driving device (38) and move the reflector (37) to the second position (P2) which is optimal for the annealing plasma mode. Here, the second position (P2) may be applied variably depending on the process environment, etc.

[0070] Next, as shown in the substrate unloading time (tt) of FIG. 5, the plasma inside the process chamber (10) after the annealing process is finished can be turned OFF, and the substrate (1) can be unloaded to the outside of the process chamber (10).

[0071] Next, as shown in the third time (t3) of FIGS. 3 and FIGS. 5, in the passivation plasma ignition mode, the passivation plasma can be ignited by sliding the reflector (37) of the auto sliding tuner (35) to a third position (P3) using the control unit (40).

[0072] At this time, the control unit (40) can receive recipe information from the equipment control unit (2) or receive various signals from sensors such as a gas sensor, power sensor, pressure sensor, process time sensor, and plasma density sensor of the process chamber (10) to automatically drive the driving device (38) and move the reflector (37) to the third position (P3) which is optimal for the passivation plasma ignition mode. Here, the third position (P3) may be applied variably depending on the process environment, etc.

[0073] Next, as shown in the fourth time (t4) of FIGS. 4 and 5, in the passivation plasma mode, the passivation mode can be performed while maintaining the passivation plasma by using the control unit (40) to slide the reflector (37) of the auto sliding tuner (35) to a fourth position (P4).

[0074] At this time, the control unit (40) can receive recipe information from the equipment control unit (2) or receive various signals from sensors such as a gas sensor, power sensor, pressure sensor, process time sensor, and plasma density sensor of the process chamber (10) to automatically drive the driving device (38) and move the reflector (37) to the fourth position (P4) which is optimal for the passivation plasma mode. Here, the fourth position (P4) may be applied variably depending on the process environment, etc.

[0075] Here, the illustrated plasma density is exemplified as the density of the passivation plasma being higher than that of the annealing plasma, but is not necessarily limited to this and variations in density may occur in a wide variety of forms.

[0076] Therefore, automatic control using the above-mentioned auto sliding tuner (35) is possible, allowing for very precise control for each process or mode, and can prevent plasma instability or arcing phenomena by rapidly responding to changes in impedance inside the process chamber (10). For example, the Voltage Standing Wave Ratio (VSWR) can be controlled from 3 to 2 or less, or the Reflect Power can be significantly reduced from 100 W to 50 W or less, thereby greatly improving plasma efficiency and stabilization, and the arcing durability of major components can be greatly increased from about 200 substrates to about 5000 substrates.

[0077] FIG. 6 is a flowchart illustrating a substrate processing method according to some embodiments of the present invention.

[0078] As illustrated in FIGS. 1 to 6, a substrate processing method according to some embodiments of the present invention comprises: (a) loading a substrate (1) onto a support member (20) inside a process chamber (10); (b) igniting an annealing plasma by sliding the reflector (37) of an auto sliding tuner (35) to a first position (P1) using a control unit (40); (c) performing an annealing mode while maintaining the annealing plasma by sliding the reflector (37) of the auto sliding tuner (35) to a second position (P2) using the control unit (40); (d) turning off the plasma inside the process chamber (10) and unloading the substrate (1) to the outside of the process chamber (10); and (e) sliding the reflector (37) of the auto sliding tuner (35) to a third position (P3) using the control unit (40). The method may include the step of igniting the passivation plasma and (f) the step of sliding the reflector (37) of the auto sliding tuner (35) to a fourth position (P4) using the control unit (40) to perform a passivation mode while maintaining the passivation plasma.

[0079] The present invention has been described with reference to the embodiments illustrated in the drawings, but this is merely illustrative, and those skilled in the art will understand that various modifications and equivalent alternative embodiments are possible therefrom. Accordingly, the true technical scope of protection of the present invention should be determined by the technical spirit of the appended claims. Explanation of the symbols

[0080] 1: Substrate 2: Equipment control unit 10: Process chamber 10a: Gas supply hole 10b: Exhaust hole 11: Body 12: Cover 13: Exhaust line 20: Jijibu 21: Support plate 22: Heater 23: Support axis 30: Microwave application device M1: Microwave M2: Reflected wave P1: 1st position P2: Second position P3: Third position P4: 4th position G1: First Gas G2: Second Gas 31: Microwave generator 32: First waveguide 33: Second waveguide A: Antenna 34: Phase converter 35: Auto Sliding Tuner 36: Matched waveguide 37: Reflector 38: Driving device R: Move Load 39: Measurement section MN: Matching Network 40: Control unit 50: Gas supply unit 61: Tribe View 62: Genetic plate 100: Substrate processing device

Claims

Claim 1 A process chamber having a space formed inside; a support member installed in the process chamber and supporting a substrate; A substrate processing device comprising: a microwave application device for applying microwaves to a substrate supported by the support member so as to create a plasma environment; wherein the microwave application device includes an auto sliding tuner that automatically slides a reflector that reflects the microwave generated from a microwave generator to a first position or a second position using a driving device in a first mode, and automatically slides the reflector to a third position or a fourth position in a second mode; wherein the first mode is a process execution mode in which a first gas is supplied to the process chamber so as to allow a process to proceed on the substrate, and a first plasma environment is created for a first time with a first power and a first pressure; and the second mode is an equipment stabilization mode in which a second gas is supplied to the process chamber so as to allow equipment stabilization to proceed without the substrate in the process chamber, and a second plasma environment is created for a second time with a second power and a second pressure. Claim 2 delete Claim 3 A substrate processing apparatus according to claim 1, wherein the first mode is an annealing mode in which the first gas includes hydrogen gas, and the second mode is a passivation mode in which the second gas includes nitrogen gas. Claim 4 A substrate processing apparatus according to claim 1, further comprising: a control unit that applies a first mode control signal to the auto sliding tuner so that the reflector of the auto sliding tuner can automatically slide to the first position or the second position when at least one of a first gas supply signal, a first power application signal, a first pressure forming signal, and a combination thereof is input, and applies a second mode control signal to the auto sliding tuner so that the reflector of the auto sliding tuner can automatically slide to the third position or the fourth position when at least one of a second gas supply signal, a second power application signal, a second pressure forming signal, and a combination thereof is input. Claim 5 In claim 4, the microwave application device comprises: a microwave generator that generates the microwave; a first waveguide connected to the microwave generator; a second waveguide extending from the first waveguide and transmitting the microwave to an antenna; a phase converter installed between the first waveguide and the second waveguide and changing the phase of the microwave; and an auto-sliding tuner capable of reflecting the reflected wave of the microwave that has passed through the phase converter to the phase converter and moving the reflector back and forth; a substrate processing device. Claim 6 In claim 5, the auto sliding tuner comprises: a matched waveguide located opposite the first waveguide with respect to the phase converter; the reflector installed to be movable back and forth on the matched waveguide; and the driving device that moves the reflector back and forth by receiving a control signal from a control unit; a substrate processing device. Claim 7 A substrate processing apparatus according to claim 5, further comprising a measuring unit for measuring a reflected wave of the microwave reflected from the process chamber; wherein the control unit applies a first mode control signal or a second mode control signal to the auto sliding tuner according to the magnitude of the reflected wave measured by the measuring unit. Claim 8 A substrate processing apparatus according to claim 3, wherein in the first mode, the first position of the reflector is the position of the annealing plasma ignition mode and the second position is the position of the annealing plasma mode, and in the second mode, the third position of the reflector is the position of the passivation plasma ignition mode and the fourth position is the position of the passivation plasma mode. Claim 9 In claim 4, the control unit applies a substrate unloading control signal that controls the inside of the process chamber to a plasma OFF state between the first mode control signal and the second mode control signal, a substrate processing device. Claim 10 (a) a step of loading a substrate onto a support inside a process chamber; (b) a step of igniting an annealing plasma by sliding the reflector of the auto sliding tuner to a first position using a control unit; (c) a step of performing an annealing mode while maintaining the annealing plasma by sliding the reflector of the auto sliding tuner to a second position using the control unit; (d) a step of turning off the plasma inside the process chamber and unloading the substrate to the outside of the process chamber; (e) a step of igniting a passivation plasma by sliding the reflector of the auto sliding tuner to a third position using the control unit; and (f) a step of performing a passivation mode while maintaining the passivation plasma by sliding the reflector of the auto sliding tuner to a fourth position using the control unit; comprising a substrate processing method.

Images