Chuck table surface monitoring apparatus and substrate treating apparatus including the same

Abstract

The present invention provides a chuck table surface monitoring device that measures and analyzes the shape and surface condition of a chuck table using a plurality of non-contact displacement sensors, and a substrate processing device including the same. The chuck table surface monitoring device includes a measuring unit that acquires data regarding the substrate when a substrate including a notch is placed on the chuck table; and a processing unit that processes the data. The measuring unit includes a plurality of first sensors arranged in a row that measure the distance to the substrate; and a second sensor that measures the coordinates of the notch.

Description

Technology Field

[0001] The present invention relates to a chuck table surface monitoring device applicable to a semiconductor manufacturing process and a substrate processing device including the same. Background Technology

[0002] Chemical Mechanical Polishing (CMP) equipment includes a chuck table and can be used in a polishing process to flatten a substrate. However, since local humps and local dents remaining on the chuck table can be transferred to the substrate as humps and dents during the substrate processing process, it is very important to identify and manage the surface condition of the chuck table.

[0003] Conventionally, the surface of the chuck table was managed through the self-grinding method, but this method has limitations in measuring and analyzing the shape and surface condition of the chuck table. The problem to be solved

[0004] The technical problem to be solved by the present invention is to provide a chuck table surface monitoring device that measures and analyzes the shape and surface condition of a chuck table using a plurality of non-contact displacement sensors, and a substrate processing device including the same.

[0005] The technical problems of the present invention are not limited to those mentioned above, and other unmentioned technical problems will be clearly understood by those skilled in the art from the description below. means of solving the problem

[0006] One aspect of the chuck table surface monitoring device of the present invention for achieving the above technical objective comprises: a measuring unit that acquires data regarding a substrate when a substrate including a notch is placed on the chuck table; and a processing unit that processes the data, wherein the measuring unit comprises a plurality of first sensors arranged in a row that measure the distance to the substrate; and a second sensor that measures the coordinates of the notch.

[0007] One aspect of the substrate processing apparatus of the present invention for achieving the above technical problem comprises: a chuck table supporting a substrate; a slurry supply arm adjacent to the chuck table and supplying a slurry to the chuck table; a spindle assembly disposed on the chuck table and polishing the substrate in conjunction with the chuck table; and a chuck table surface monitoring device for monitoring the surface condition of the chuck table before polishing the substrate, wherein the chuck table surface monitoring device comprises: a measuring unit for acquiring data regarding the substrate when the substrate including a notch is placed on the chuck table; and a processing unit for processing the data, wherein the measuring unit comprises a plurality of first sensors arranged in a row and measuring the distance to the substrate; and a second sensor for measuring the coordinates of the notch.

[0008] Specific details of other embodiments are included in the detailed description and drawings. Brief explanation of the drawing

[0009] FIG. 1 is a first illustrative diagram for explaining a semiconductor manufacturing facility according to some embodiments of the present invention. FIG. 2 is a second exemplary diagram for explaining a semiconductor manufacturing facility according to some embodiments of the present invention. FIG. 3 is a first illustrative diagram for explaining the structure of a substrate processing device according to some embodiments of the present invention. FIG. 4 is a second exemplary diagram for explaining the structure of a substrate processing device according to some embodiments of the present invention. FIG. 5 is a first illustrative diagram for explaining a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 6 is a first exemplary diagram for explaining the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 7 is a first exemplary diagram for explaining the structure of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 8 is a second exemplary diagram for explaining the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 9 is a third exemplary diagram illustrating the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 10 is a fourth exemplary diagram illustrating the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 11 is a fifth exemplary diagram illustrating the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 12 is a first exemplary diagram for explaining the operation method of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 13 is a second exemplary diagram illustrating the operation method of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 14 is a sixth exemplary diagram illustrating the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 15 is a seventh exemplary diagram illustrating the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. FIG. 16 is a second illustrative diagram for explaining a chuck table surface monitoring device according to some embodiments of the present invention. Specific details for implementing the invention

[0010] Embodiments of the present invention will be described in detail below with reference to the attached drawings. Identical components in the drawings are denoted by the same reference numerals, and redundant descriptions thereof are omitted.

[0011] A substrate processing device can perform a polishing process on a substrate. For example, the substrate processing device can perform a Chemical Mechanical Polishing (CMP) process. Below, a semiconductor manufacturing facility including a substrate processing device will be described first, followed by a description of the substrate processing device.

[0012] FIG. 1 is a first exemplary diagram for explaining a semiconductor manufacturing facility according to some embodiment of the present invention. FIG. 2 is a second exemplary diagram for explaining a semiconductor manufacturing facility according to some embodiment of the present invention. Referring to FIG. 1 and FIG. 2, the semiconductor manufacturing facility (100) may be configured to include a load port module (110), an index module (120), a cleaning module (130), a transfer module (140), and a substrate processing device (200).

[0013] The first direction (D1) and the second direction (D2) can form a two-dimensional plane. The first direction (D1) may be the X-axis direction and the second direction (D2) may be the Y-axis direction. The first direction (D1) may be the left-right direction and the second direction (D2) may be the front-back direction. Alternatively, the first direction (D1) may be the front-back direction and the second direction (D2) may be the left-right direction. The third direction (D3) can form a three-dimensional solid with the first direction (D1) and the second direction (D2). The third direction (D3) is a direction perpendicular to the plane formed by the first direction (D1) and the second direction (D2). The third direction (D3) may be the Z-axis direction. The third direction (D3) may be the up-down direction.

[0014] The load port module (110) can provide a seating surface for the container. The load port module (110) may include multiple load ports to allow multiple containers to be seated, but is not limited thereto and may include only a single load port. The container may be transported to the load port module (110) by a ceiling transport device. Alternatively, the container may be transported to the load port module (110) by a ground transport device. The container may contain one or more substrates. For example, the container may be provided as a Front Opening Unified Pod (FOUP). The ceiling transport device may move along rails installed on the ceiling of a semiconductor manufacturing plant to transport the container. For example, the ceiling transport device may be provided as an Overhead Hoist Transport (OHT). The ground transport device may move on the ground within the semiconductor manufacturing plant to transport the container. For example, the ground transport device may be provided as an Autonomous Mobile Robot (AMR) or an Automatic Guided Vehicle (AGV).

[0015] In the load port module (110), the container itself may be loaded or unloaded. In the load port module (110), a substrate housed within the container may be loaded or unloaded. The load port module (110) may be positioned in front of the index module (120). For example, the load port module (110) may include three load ports (110a, 110b, 110c), such as a first load port (110a), a second load port (110b), and a third load port (110c). The three load ports (110a, 110b, 110c) may be positioned in a first direction (D1) or a second direction (D2), but are not limited thereto and may also be positioned in a third direction (D3).

[0016] One container can be placed in each of the three load ports (110a, 110b, 110c). The containers placed in each load port (110a, 110b, 110c) can carry different types of items. For example, the container placed in the first load port (110a) can carry a substrate, the container placed in the second load port (110b) can carry a sensor, and the container placed in the third load port (110c) can carry consumable parts such as a focus ring. However, it is not limited to this, and it is also possible for the containers placed in each load port (110a, 110b, 110c) to carry items of the same type. Alternatively, it is possible to load two load ports (two selected from 110a, 110b, and 110c) with articles of the same type, and load another load port (the remaining one not selected from 110a, 110b, and 110c) with an article different from this.

[0017] The index module (120) may be provided as an interface for substrate transfer between the load port module (110) and the cleaning module (130). The index module (120) may include a first module housing (121) and a first transport robot (122). The first module housing (121) may provide an atmospheric pressure environment. One or more first transport robots (122) may be placed inside the first module housing (121). The first transport robot (122) may move in a first direction (D1) along a rail (R). The first transport robot (122) may rotate clockwise or counterclockwise. The first transport robot (122) may bring a substrate from the load port module (110) to the cleaning module (130). The first transport robot (122) may take a substrate out of the cleaning module (130) to the load port module (110). The load port module (110) and index module (120) can be provided as an Equipment Front End Module (EFEM) within the semiconductor manufacturing facility (100).

[0018] The cleaning module (130) can clean the substrate. The cleaning module (130) can clean both the substrate requiring a polishing process and the substrate for which the polishing process has been completed. However, it is not limited thereto, and it is also possible for the cleaning module (130) to clean only the substrate for which the polishing process has been completed and not to clean the substrate requiring a polishing process. Referring to FIG. 1, the cleaning module (130) may be positioned in front of the transfer module (140). Alternatively, referring to FIG. 2, the cleaning module (130) may be positioned side by side with the transfer module (140).

[0019] Although not illustrated in FIGS. 1 and 2, the cleaning module (130) may include one or more cleaning devices within it. Each cleaning device may be configured to include a cleaning stage, a second platen, and a brush. The second platen and the brush may be placed inside the cleaning stage. A substrate may be placed on the second platen. The second platen may support the substrate while it is being cleaned. A brush may be placed on top of the second platen. The brush may move over the substrate to come into contact with the substrate and clean the substrate. The brush may clean foreign substances present on the substrate. The cleaning module (130) may use ultrapure water (DIW) when cleaning the substrate.

[0020] The transfer module (140) may be provided as an interface for transferring substrates between the cleaning module (130) and the substrate processing device (200). The transfer module (140) may include a second module housing (141) and a second transport robot (142). The second module housing (141) may provide an internal environment at atmospheric pressure. One or more second transport robots (142) may be placed inside the second module housing (141). The second transport robot (142) may rotate clockwise or counterclockwise. The second transport robot (142) may bring in or take out substrates between the cleaning module (130) and the substrate processing device (200).

[0021] The substrate processing device (200) can perform a polishing process to polish the substrate. The substrate processing device (200) can produce the thickness of the substrate to a desired thickness through the polishing process. The substrate processing device (200) can flatten the surface of the substrate through the polishing process. The substrate processing device (200) can be provided as a grinding device. For example, the substrate processing device (200) can be provided as a chemical mechanical polishing (CMP) device. One or more substrate processing devices (200) can be provided within the semiconductor manufacturing facility (100). A detailed description of the substrate processing device (200) will be provided later.

[0022] Referring to FIG. 2, the semiconductor manufacturing facility (100) may further include a buffer module (150). The buffer module (150) may store a substrate requiring a polishing process. Alternatively, the buffer module (150) may store a substrate for which a polishing process has been completed. The buffer module (150) may store one or more substrates. The buffer module (150) may be placed alongside the cleaning module (130) and the transfer module (140).

[0023] If the semiconductor manufacturing facility (100) includes a buffer module (150), the index module (120) may be provided as an interface for substrate transfer between the load port module (110) and the buffer module (150). The transfer module (140) may be provided as an interface for substrate transfer between the cleaning module (130) and the buffer module (150), or as an interface for substrate transfer between the substrate processing device (200) and the buffer module (150).

[0024] Although not illustrated in FIGS. 1 and 2, the semiconductor manufacturing facility (100) may further include a control device. The control device can control the overall operation of each internal module constituting the semiconductor manufacturing facility (100). The control device may be provided as a computing device for data processing and analysis, command transmission, etc. The control device may be provided as a computing device including a processor (e.g., MPU, MCU, etc.).

[0025] The control device may include a processor that executes control for each internal module, a network that communicates with each internal module via wired or wireless means, one or more instructions related to functions or operations for controlling each internal module, processing recipes including instructions, and storage means for storing various data. The control device may further include a user interface that includes an input means for an administrator to perform command input operations for management purposes, and an output means for visualizing and displaying the operating status.

[0026] Instructions may be provided in the form of a computer program or an application. A computer program may be stored on a computer-readable storage medium containing one or more instructions. Instructions may include code generated by a compiler, code that can be executed by an interpreter, etc. The storage means may be provided as one or more storage media selected from flash memory, HDD, SSD, card-type memory, RAM, SRAM, ROM, EEPROM, PROM, magnetic memory, magnetic disk, and optical disk.

[0027] Next, a substrate processing device (200) will be described. The substrate processing device (200) may use an air bearing to perform efficient polishing on the substrate. FIG. 3 is a first illustrative diagram for explaining the structure of a substrate processing device according to some embodiments of the present invention. Referring to FIG. 3, the substrate processing device (200) may include a base (210), a load cup (220), a first platen (230), a spindle assembly (240), a support frame (250), an exchanger (260), a polishing pad (270), a slurry supply arm (280), and a pad conditioner (290).

[0028] The base (210) may be composed of multiple parts. The base (210) may include four parts (211, 212, 213, 214), such as a first part (211), a second part (212), a third part (213), and a fourth part (214). The four parts (211, 212, 213, 214) may be arranged in a counterclockwise direction. The multiple parts constituting the base (210) are not limited to four, and it is possible to provide more or fewer parts.

[0029] A load cup (220) and an exchanger (260) may be installed in the first part (211). A transfer module (140) may transport a substrate requiring a polishing process to a substrate processing device (200). When a substrate is brought into the first part (211) within the substrate processing device (200), the exchanger (260) may transport the substrate to the load cup (220). The load cup (220) may temporarily store the substrate transported by the exchanger (260). The substrate may wait in the load cup (220). Afterward, the substrate may be moved onto the first platen (230) via a spindle assembly (240) connected to a support frame (250). The first part (211) may be provided as a single unit, but the present embodiment is not necessarily limited thereto.

[0030] The first platen (230), polishing pad (270), slurry supply arm (280), and pad conditioner (290) may be installed in the second part (212), the third part (213), and the fourth part (214), respectively. The second part (212), the third part (213), and the fourth part (214) may be provided in multiple numbers, but the present embodiment is not necessarily limited thereto. Hereinafter, a structure including the first platen (230), polishing pad (270), slurry supply arm (280), and pad conditioner (290) will be described based on the second part (212), but it goes without saying that such a structure can be applied in the same way to the third part (213) and the fourth part (214).

[0031] FIG. 4 is a second illustrative diagram for explaining the structure of a substrate processing apparatus according to some embodiments of the present invention. Referring to FIG. 4, a first platen (230) is coupled to the central portion of a second portion (212), and a polishing pad (270) may be coupled to the first platen (230). The first platen (230) and the polishing pad (270) may be provided as a single unit on the second portion (212), but are not limited thereto and may be provided as a plurality.

[0032] The first platen (230) can rotate clockwise or counterclockwise. Although not shown in FIG. 4, the first platen (230) may be connected to a power source and a motor. The first platen (230) may rotate around a motor shaft. The motor may be built into the second part (212). The power source may provide driving force to the motor. The power source may be built into the second part (212), but is not limited thereto and may also be provided outside the substrate processing device (200).

[0033] The polishing pad (270) can be rotated by the rotational force of the first platen (230). The polishing pad (270) can rotate together with the first platen (230). The polishing pad (270) can rotate in the same direction as the first platen (230). The polishing pad (270) can be provided as a flat plate. The polishing pad (270) may include a roughened surface. The polishing pad (270) can mechanically polish the substrate upon contact with the substrate through the rotational force and the rough surface.

[0034] The main body of the slurry supply arm (280) may be positioned adjacent to the first platen (230). The end of the slurry supply arm (280) may be positioned on the polishing pad (270). The slurry supply arm (280) may provide slurry to the upper surface of the polishing pad (270). The slurry may include a reactive agent, abrasive particles, a chemical reaction catalyst, etc. The reactive agent may include deionized water for oxidative polishing. The abrasive particles may include silicon dioxide for oxidative polishing. The chemical reaction catalyst may include potassium hydroxide for oxidative polishing.

[0035] The pad conditioner (290) may be positioned adjacent to the first platen (230). The pad conditioner (290) may be positioned adjacent to the slurry supply arm (280). The pad conditioner (290) may maintain the condition of the polishing pad (270) so that the polishing efficiency for the substrate is not reduced.

[0036] Referring to FIG. 3, the support frame (250) may be composed of four arms. A spindle assembly (240) may be installed on each arm of the support frame (250). The spindle assembly (240) may be positioned on each of the four parts (211, 212, 213, 214) of the base (210).

[0037] Referring to FIG. 4, the spindle assembly (240) may be configured to include a spindle body (241), a grinding wheel (242), a driving unit (243), and a grinding head (244).

[0038] The spindle assembly (240) can adsorb a substrate to be polished. In this case, the polishing head (244) can adsorb the substrate such that the polishing surface of the substrate faces the polishing pad (270). However, it is not limited thereto, and the spindle assembly (240) can also grip the substrate to be polished.

[0039] The drive unit (243) can provide power to move the spindle body (241) and the grinding wheel (242). The spindle body (241) and the grinding wheel (242) can move horizontally in a first direction (D1) or a second direction (D2). The spindle body (241) and the grinding wheel (242) can move vertically in a third direction (D3). The spindle body (241) and the grinding wheel (242) can rotate clockwise or counterclockwise. Alternatively, only the grinding wheel (242) can rotate clockwise or counterclockwise.

[0040] The polishing head (244) can be combined with the grinding wheel (242). The polishing head (244) can perform translational movement together with the grinding wheel (242) according to the horizontal movement and / or vertical movement of the grinding wheel (242). The polishing head (244) can perform rotational movement together with the grinding wheel (242) according to the rotational movement of the grinding wheel (242). During the polishing process, the polishing head (244) can bring the substrate into contact with the polishing pad (270) while adsorbing the substrate. The polishing head (244) can press the substrate while the substrate is in close contact with the polishing pad (270). The driving unit (243) can control the three-dimensional positions (x, y, z) of the spindle body (241), the grinding wheel (242), and the polishing head (244) to control the polishing area of ​​the substrate, the degree of polishing of each part of the substrate, etc. Here, x can be defined as a position in the first direction (D1), y as a position in the second direction (D2), and z as a position in the third direction (D3).

[0041] Referring to FIG. 3, the spindle assembly (240) may be provided in multiple numbers corresponding to the number of parts of the base (210). In this case, the support frame (250) includes multiple arms, and each spindle assembly (240) may be connected to each arm of the support frame (250). The support frame (250) rotates, and through rotation, the spindle assembly (240) can be moved onto the polishing pad (270) or onto the load cup (220). The polishing head (244) can load a substrate from the load cup (220), then move onto the polishing pad (270) to polish the substrate. After completing the polishing of the substrate, the polishing head (244) can unload the substrate from the load cup (220). The exchanger (260) can move the substrate, on which the polishing process is completed, from the load cup (220) to the transfer module (140).

[0042] When performing a polishing process, the substrate is placed on the polishing pad (270), and the polishing head (244) and the polishing pad (270) can come into contact with the substrate from the top and bottom. The polishing head (244) can be rotated by a grinding wheel (242). The polishing pad (270) can be rotated by a first platen (230). The top and bottom surfaces of the substrate can be processed by the rotation of the polishing head (244) and the polishing pad (270). The polishing pad (270) can be provided as a chuck table within the substrate processing device (200).

[0043] The shape and surface condition of the chuck table (270) can be managed through self-grinding. Self-grinding means grinding the surface of the chuck table (270). However, since self-grinding does not undergo a process of analyzing the shape and surface condition of the chuck table (270), local humps or local dents may remain partially on the surface of the chuck table (270). When processing a substrate using the chuck table (270), the humps or dents may be transferred to the substrate.

[0044] In order to solve these problems, the present invention provides a chuck table surface monitoring device capable of measuring and analyzing the shape and surface condition of a chuck table (270). FIG. 5 is a first illustrative diagram for explaining a chuck table surface monitoring device according to some embodiments of the present invention. Referring to FIG. 5, the chuck table surface monitoring device (300) may be configured to include a measuring unit (310) and a processing unit (320).

[0045] The chuck table surface monitoring device (300) can measure the surface condition and shape of the chuck table (270). The chuck table surface monitoring device (300) may be included in a substrate processing device (200) that performs a polishing process on a substrate. The chuck table surface monitoring device (300) may be included in a semiconductor manufacturing facility (100) that includes the substrate processing device (200).

[0046] Although not illustrated in FIGS. 1 to 4, the chuck table surface monitoring device (300) may be positioned adjacent to the substrate processing device (200) within the semiconductor manufacturing facility (100). The chuck table surface monitoring device (300) may be positioned adjacent to any one of the second part (212), third part (213), and fourth part (214) of the base (210) within the substrate processing device (200). However, it is not limited thereto, and the chuck table surface monitoring device (300) may also be positioned adjacent to a module other than the base (210), and may also be positioned outside the semiconductor manufacturing facility (100).

[0047] The measuring unit (310) can measure the surface condition and shape of the chuck table (270) itself. The measuring unit (310) can measure the surface condition and shape of the chuck table (270) after self-grinding. A substrate can be placed on the chuck table (270) for a polishing process. The measuring unit (310) can measure the surface condition and shape of the substrate placed on the chuck table (270). The measuring unit (310) can measure the surface condition and shape of the substrate before processing the substrate. The measuring unit (310) can measure the surface condition and shape of the substrate after processing the substrate. The chuck table surface monitoring device (300) can predict the surface condition and shape of the chuck table (270) from the surface condition and shape of the substrate.

[0048] FIG. 6 is a first exemplary diagram for explaining the components of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention. Referring to FIG. 6, the measuring unit (310) may include a plurality of first sensors. For example, the measuring unit (310) may include five first sensors (411, 412, 413, 414, 415), such as a first-1 sensor (411), a first-2 sensor (412), a first-3 sensor (413), a first-4 sensor (414), and a first-5 sensor (415). Hereinafter, the case in which the measuring unit (310) includes five first sensors (411, 412, 413, 414, 415) will be described as an example, but the number of first sensors included in the measuring unit (310) in this embodiment is not limited thereto.

[0049] Five first sensors (411, 412, 413, 414, 415) may be arranged in a line. Five first sensors (411, 412, 413, 414, 415) may be arranged in a direction parallel to the width direction of the chuck table (270). FIG. 7 is a first exemplary diagram for explaining the structure of a measuring unit constituting a chuck table surface monitoring device according to some embodiment of the present invention.

[0050] Referring to FIG. 7, the first-1 sensor (411) may be positioned to correspond to the center (CT) of the chuck table (270). The first-2 sensor (412) may be positioned to correspond to a position spaced a first distance (L1) away from the center (CT) of the chuck table (270). The first-3 sensor (413) may be positioned to correspond to a position spaced a second distance (L2) away from the center (CT) of the chuck table (270). The second distance (L2) may be a greater distance from the center (CT) of the chuck table (270) than the first distance (L1). The difference between the first distance (L1) and the second distance (L2) may be equal to the difference between the center (CT) of the chuck table (270) and the first distance (L1), but it may also be different. The first-fourth sensor (414) may be positioned to correspond to a location spaced a third distance (L3) away from the center (CT) of the chuck table (270). The third distance (L3) may be a greater distance from the center (CT) of the chuck table (270) than the second distance (L2). The difference between the second distance (L2) and the third distance (L3) may be equal to the difference between the first distance (L1) and the second distance (L2), but may also be different. The difference between the second distance (L2) and the third distance (L3) may be equal to the difference between the center (CT) of the chuck table (270) and the first distance (L1), but may also be different. The first-fifth sensor (415) may be positioned to correspond to a location spaced a fourth distance (L4) away from the center (CT) of the chuck table (270). The fourth distance (L4) may be a distance further from the center (CT) of the chuck table (270) than the third distance (L3). The difference between the third distance (L3) and the fourth distance (L4) may be equal to the difference between the second distance (L2) and the third distance (L3), but may also be different. The difference between the third distance (L3) and the fourth distance (L4) may be equal to the difference between the first distance (L1) and the second distance (L2), but may also be different.The difference between the third distance (L3) and the fourth distance (L4) may be equal to the difference between the center (CT) of the chuck table (270) and the first distance (L1), but it may also be different.

[0051] Five first sensors (411, 412, 413, 414, 415) can measure the distance to the surface of the chuck table (270). The five first sensors (411, 412, 413, 414, 415) can be placed at positions corresponding to different parts of the chuck table (270). The five first sensors (411, 412, 413, 414, 415) can measure the distance to the surface of each part of the chuck table (270). The five first sensors (411, 412, 413, 414, 415) can be placed above the chuck table (270) in a third direction (D3). The five first sensors (411, 412, 413, 414, 415) can measure the height of each part of the chuck table (270). The five first sensors (411, 412, 413, 414, 415) may be provided as distance measuring sensors or height measuring sensors.

[0052] When a substrate is placed on the chuck table (270), five first sensors (411, 412, 413, 414, 415) can measure the distance to the surface of the substrate. The chuck table (270) may include a porous region. The five first sensors (411, 412, 413, 414, 415) can measure the porous region of the chuck table (270).

[0053] The five first sensors (411, 412, 413, 414, 415) can have their positions fixed. The five first sensors (411, 412, 413, 414, 415) can have their positions fixed on a chuck table (270). The five first sensors (411, 412, 413, 414, 415) can be fixed simultaneously through a single frame, but are not necessarily limited thereto. The five first sensors (411, 412, 413, 414, 415) can be attached to a fixed frame to minimize measurement errors caused by vibration of the sensors themselves. The measuring unit (310) including the five first sensors (411, 412, 413, 414, 415) can be provided as a fixed coordinate measurement system.

[0054] The positions of the five first sensors (411, 412, 413, 414, 415) may be varied. In this case, to minimize measurement error, the five first sensors (411, 412, 413, 414, 415) may perform a sensing function after their positions have been varied and then fixed. Referring to FIGS. 8 and 9, the measuring unit (310) may further include a position adjustment unit (420). FIG. 8 is a second exemplary diagram illustrating the components of the measuring unit constituting a chuck table surface monitoring device according to some embodiment of the present invention. FIG. 9 is a third exemplary diagram illustrating the components of the measuring unit constituting a chuck table surface monitoring device according to some embodiment of the present invention.

[0055] The position adjustment unit (420) can adjust the position of five first sensors (411, 412, 413, 414, 415). Alternatively, the position adjustment unit (420) can adjust the height of five first sensors (411, 412, 413, 414, 415). The position adjustment unit (420) can adjust the position or height of five first sensors (411, 412, 413, 414, 415) so that the five first sensors (411, 412, 413, 414, 415) are located within the sensing data acquisition section.

[0056] Referring to FIG. 8, the position control unit (420) may be provided as a single unit. Five first sensors (411, 412, 413, 414, 415) may be dependent on the position control unit (420). The position control unit (420) may control the five first sensors (411, 412, 413, 414, 415) in common. The position control unit (420) may control the position of the five first sensors (411, 412, 413, 414, 415) under equal conditions. The position control unit (420) may control the position of the five first sensors (411, 412, 413, 414, 415) so that they are spaced apart from the chuck table (270) at an equal distance. The position control unit (420) can simultaneously control the position of five first sensors (411, 412, 413, 414, 415). The position control unit (420) can collectively control the position of five first sensors (411, 412, 413, 414, 415).

[0057] Referring to FIG. 9, the position adjustment unit (420) may be provided in multiple numbers. The position adjustment unit (420) may be provided in a number equal to that of the first sensor. For example, the position adjustment unit (420) may include five position adjustment modules (421, 422, 423, 424, 425), such as the first position adjustment module (421), the second position adjustment module (422), the third position adjustment module (423), the fourth position adjustment module (424), and the fifth position adjustment module (425).

[0058] Five position control modules (421, 422, 423, 424, 425) can be connected one-to-one with five first sensors (411, 412, 413, 414, 415). The five first sensors (411, 412, 413, 414, 415) can be independent of the position control unit (420). The five position control modules (421, 422, 423, 424, 425) can independently control the five first sensors (411, 412, 413, 414, 415). The five position control modules (421, 422, 423, 424, 425) can position control the five first sensors (411, 412, 413, 414, 415) under different conditions. The five position control modules (421, 422, 423, 424, 425) can position control the five first sensors (411, 412, 413, 414, 415) so that they are spaced at different distances from the chuck table (270). The five position control modules (421, 422, 423, 424, 425) can position control the five first sensors (411, 412, 413, 414, 415) separately. However, not limited to this, the five position control modules (421, 422, 423, 424, 425) can also control the position of the five first sensors (411, 412, 413, 414, 415) under equal conditions. The five position control modules (421, 422, 423, 424, 425) can control the position of the five first sensors (411, 412, 413, 414, 415) so that they are spaced apart from the chuck table (270) at an equal distance, and can control the position of the five first sensors (411, 412, 413, 414, 415) simultaneously.

[0059] The angles of the five first sensors (411, 412, 413, 414, 415) can be varied. Referring to FIGS. 10 and 11, the measuring unit (310) may further include an angle adjustment unit (430). FIG. 10 is a fourth exemplary diagram illustrating the components of the measuring unit constituting a chuck table surface monitoring device according to some embodiment of the present invention. FIG. 11 is a fifth exemplary diagram illustrating the components of the measuring unit constituting a chuck table surface monitoring device according to some embodiment of the present invention.

[0060] The angle adjustment unit (430) can adjust the tilting angle of the five first sensors (411, 412, 413, 414, 415). The angle adjustment unit (430) can adjust the tilting angle of the five first sensors (411, 412, 413, 414, 415) to reduce signal deviations that vary depending on the surface condition of the chuck table (270).

[0061] Referring to FIG. 10, the angle adjustment unit (430) may be provided as a single unit. Five first sensors (411, 412, 413, 414, 415) may be subordinate to the angle adjustment unit (430). The angle adjustment unit (430) may control the five first sensors (411, 412, 413, 414, 415) in common. The angle adjustment unit (430) may angle control the five first sensors (411, 412, 413, 414, 415) under equal conditions. The angle adjustment unit (430) may angle control the five first sensors (411, 412, 413, 414, 415) so that they tilt at equal angles from the chuck table (270). The angle adjustment unit (430) can simultaneously control the angles of five first sensors (411, 412, 413, 414, 415). The angle adjustment unit (430) can collectively control the angles of five first sensors (411, 412, 413, 414, 415).

[0062] Referring to FIG. 11, the angle adjustment unit (430) may be provided in multiple numbers. The angle adjustment unit (430) may be provided in a number equal to that of the first sensor. For example, the angle adjustment unit (430) may include five angle adjustment modules (431, 432, 433, 434, 435), such as the first angle adjustment module (431), the second angle adjustment module (432), the third angle adjustment module (433), the fourth angle adjustment module (434), and the fifth angle adjustment module (435).

[0063] Five angle adjustment modules (431, 432, 433, 434, 435) can be connected one-to-one with five first sensors (411, 412, 413, 414, 415). The five first sensors (411, 412, 413, 414, 415) can be independent of the angle adjustment unit (430). The five angle adjustment modules (431, 432, 433, 434, 435) can independently control the five first sensors (411, 412, 413, 414, 415). The five angle adjustment modules (431, 432, 433, 434, 435) can angle control the five first sensors (411, 412, 413, 414, 415) under different conditions. The five angle adjustment modules (431, 432, 433, 434, 435) can angle control the five first sensors (411, 412, 413, 414, 415) so that they are tilted at different angles from the chuck table (270). The five angle adjustment modules (431, 432, 433, 434, 435) can angle control the five first sensors (411, 412, 413, 414, 415) separately. However, not limited to this, the five angle adjustment modules (431, 432, 433, 434, 435) can also angle control the five first sensors (411, 412, 413, 414, 415) under equal conditions. The five angle adjustment modules (431, 432, 433, 434, 435) can angle control the five first sensors (411, 412, 413, 414, 415) so that they tilt at equal angles from the chuck table (270), and can angle control the five first sensors (411, 412, 413, 414, 415) simultaneously.

[0064] The five first sensors (411, 412, 413, 414, 415) can measure the entire front surface of the chuck table (270). Here, the front surface refers to the entire upper surface of the chuck table (270). The chuck table (270) may be provided in a disc shape. Referring to FIG. 12, the chuck table (270) may rotate, while the five first sensors (411, 412, 413, 414, 415) may not rotate. The chuck table (270) may rotate clockwise. Alternatively, the chuck table (270) may rotate counterclockwise. While the chuck table (270) is rotating, the five first sensors (411, 412, 413, 414, 415) may measure the chuck table (270) at regular time intervals in place. FIG. 12 is a first exemplary diagram for explaining the operation method of a measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention.

[0065] Alternatively, referring to FIG. 13, the five first sensors (411, 412, 413, 414, 415) may rotate, and the chuck table (270) may not rotate. The five first sensors (411, 412, 413, 414, 415) may rotate clockwise. Alternatively, the five first sensors (411, 412, 413, 414, 415) may rotate counterclockwise. The chuck table (270) may not rotate, and the five first sensors (411, 412, 413, 414, 415) may rotate to measure the chuck table (270). FIG. 13 is a second exemplary diagram for explaining the operation method of a measuring unit constituting a chuck table surface monitoring device according to some embodiment of the present invention.

[0066] For the above, the case in which the measuring unit (310) measures the chuck table (270) has been described with reference to FIGS. 6 to 13. Of course, the device elements and method elements described above can be applied in the same way when the measuring unit (310) measures a substrate placed on the chuck table (270).

[0067] The measuring unit (310) may include a plurality of first sensors, but it is also possible to include a second sensor. FIG. 14 is a sixth exemplary diagram for explaining the components of the measuring unit constituting a chuck table surface monitoring device according to some embodiments of the present invention.

[0068] The second sensor (440) can measure a portion of the substrate (W). The second sensor (440) can measure an edge portion of the substrate (W). A notch (N) may be formed on the edge portion of the substrate (W). The second sensor (440) measures the notch (N) and can acquire coordinate information for the notch (N).

[0069] The second sensor (440) may be arranged in parallel with the five first sensors (411, 412, 413, 414, 415) in the width direction of the chuck table (270). The second sensor (440) may be placed further outward than the first-fifth sensors (415). The position of the second sensor (440) may correspond to a position spaced a fifth distance (L5) away from the center (CT) of the chuck table (270). The fifth distance (L5) may be a distance further from the center (CT) of the chuck table (270) than the fourth distance (L4). The difference between the fourth distance (L4) and the fifth distance (L5) may be equal to other difference values, but may also be different. Here, other difference values ​​may mean one or more difference values ​​selected from the difference value between the center (CT) of the chuck table (270) and the first distance (L1), the difference value between the first distance (L1) and the second distance (L2), the difference value between the second distance (L2) and the third distance (L3), and the difference value between the third distance (L3) and the fourth distance (L4).

[0070] The second sensor (440) may be provided as a single unit within the measuring unit (310). However, it is not limited thereto, and it is also possible for the second sensor (440) to be provided as a plurality within the measuring unit (310). When the second sensor (440) is provided as a plurality, the plurality of second sensors may be arranged in the width direction of the chuck table (270). For example, the plurality of second sensors may be arranged in the first direction (D1). However, it is not limited thereto, and it is also possible for the plurality of second sensors to be arranged in the thickness direction of the chuck table (270). For example, the plurality of second sensors may be arranged in the third direction (D3). The plurality of second sensors may operate simultaneously. However, it is not limited thereto, and it is also possible for one second sensor to operate when one of the second sensors does not operate normally.

[0071] The position of the second sensor (440) may be fixed. However, it is not limited to this, and the position of the second sensor (440) may also be variable. The second sensor (440) is connected to a position adjustment unit (420), and its position may be changed by the position adjustment unit (420). The position of the second sensor (440) may be changed using a position adjustment unit (420) that is connected to at least one of the five first sensors (411, 412, 413, 414, 415), but it is also possible for the position to be changed using a position adjustment unit (420) that is not connected to the five first sensors (411, 412, 413, 414, 415).

[0072] The angle of the second sensor (440) toward the surface of the chuck table (270) may be constant. However, it is not limited to this, and the angle of the second sensor (440) may also be changed. The second sensor (440) is connected to an angle adjustment unit (430), and the angle may be changed by the angle adjustment unit (430). The angle of the second sensor (440) may be changed using an angle adjustment unit (430) connected to at least one of the five first sensors (411, 412, 413, 414, 415), but the angle may also be changed using an angle adjustment unit (430) not connected to the five first sensors (411, 412, 413, 414, 415).

[0073] The measuring unit (310) may further include a third sensor. FIG. 15 is a seventh exemplary diagram illustrating the components of the measuring unit constituting a chuck table surface monitoring device according to some embodiment of the present invention. The measuring unit (310) may include a plurality of first sensors, second sensors, and third sensors. Referring to FIG. 15, the measuring unit (310) may include five first sensors (411, 412, 413, 414, 415), a second sensor (440), and a third sensor (450). Although not provided in the drawing, it is also possible for the measuring unit (310) to include only the third sensor and not the second sensor. For example, the measuring unit (310) may include five first sensors (411, 412, 413, 414, 415) and a third sensor (450).

[0074] The third sensor (450) can measure the edge portion (E) of the chuck table (270). The third sensor (450) can measure the distance to the edge portion (E) of the chuck table (270). The third sensor (450) can measure the outer area of ​​the substrate (W). The third sensor (450) can measure the portion of the chuck table (270) that is not covered by the substrate (W). The third sensor (450) can measure the externally exposed portion (E) of the chuck table (270) while the substrate (W) is seated on the chuck table (270). The third sensor (450) can measure the relative height of the chuck table (270) with respect to the substrate (W). The third sensor (450) can be used to measure the dynamic runout of the chuck table (270). The third sensor (450) can be used to determine the outline of a substrate (W) located on a chuck table (270).

[0075] The third sensor (450) may be arranged in parallel with the five first sensors (411, 412, 413, 414, 415) and the second sensor (440) in the width direction of the chuck table (270). The third sensor (450) may be placed further outward than the second sensor (440). The position of the third sensor (450) may correspond to a position spaced a sixth distance (L6) away from the center (CT) of the chuck table (270). The sixth distance (L6) may be a distance further from the center (CT) of the chuck table (270) than the fifth distance (L5). The difference between the fifth distance (L5) and the sixth distance (L6) may be equal to other difference values, but may also be different. Here, other difference values ​​may mean one or more difference values ​​selected from the difference value between the center (CT) of the chuck table (270) and the first distance (L1), the difference value between the first distance (L1) and the second distance (L2), the difference value between the second distance (L2) and the third distance (L3), the difference value between the third distance (L3) and the fourth distance (L4), and the difference value between the fourth distance (L4) and the fifth distance (L5).

[0076] The third sensor (450) may be provided as a single unit within the measuring unit (310). However, it is not limited thereto, and it is also possible for the third sensor (450) to be provided as a plurality within the measuring unit (310). When the third sensor (450) is provided as a plurality, the plurality of third sensors may be arranged in the width direction of the chuck table (270). For example, the plurality of third sensors may be arranged in the first direction (D1). However, it is not limited thereto, and it is also possible for the plurality of third sensors to be arranged in the thickness direction of the chuck table (270). For example, the plurality of third sensors may be arranged in the third direction (D3). The plurality of third sensors may operate simultaneously. However, it is not limited thereto, and it is also possible for one third sensor to operate when one third sensor does not operate normally.

[0077] The position of the third sensor (450) may be fixed. However, it is not limited to this, and the position of the third sensor (450) may also be variable. The third sensor (450) is connected to a position adjustment unit (420), and its position may be changed by the position adjustment unit (420). The position of the third sensor (450) may be changed using a position adjustment unit (420) connected to at least one of the five first sensors (411, 412, 413, 414, 415), but it is also possible for the position to be changed using a position adjustment unit (420) not connected to the five first sensors (411, 412, 413, 414, 415).

[0078] The third sensor (450) may have a constant angle facing the surface of the chuck table (270). However, it is not limited to this, and the angle of the third sensor (450) may also be changed. The third sensor (450) is connected to an angle adjustment unit (430), and the angle may be changed by the angle adjustment unit (430). The angle of the third sensor (450) may be changed using an angle adjustment unit (430) connected to at least one of the five first sensors (411, 412, 413, 414, 415), but the angle may also be changed using an angle adjustment unit (430) not connected to the five first sensors (411, 412, 413, 414, 415).

[0079] The five first sensors (411, 412, 413, 414, 415), second sensor (440), and third sensor (450) described above can function as non-contact displacement sensors. The five first sensors (411, 412, 413, 414, 415), second sensor (440), and third sensor (450) can be used to measure the surface condition and shape of the chuck table (270). The five first sensors (411, 412, 413, 414, 415), second sensor (440), and third sensor (450) can be used to determine whether the plane of the chuck table (270) in contact with the substrate (W) is a flat surface.

[0080] Referring again to Fig. 5, the explanation will be provided.

[0081] The processing unit (320) can process data acquired by the measurement unit (310). The measurement unit (310) may include a plurality of sensors. The measurement unit (310) can acquire sensing data. The processing unit (320) can signal process the sensing data of the measurement unit (320).

[0082] FIG. 16 is a second illustrative diagram for explaining a chuck table surface monitoring device according to some embodiment of the present invention. Referring to FIG. 16, the chuck table surface monitoring device (300) may be configured to include a measuring unit (310), a processing unit (320), and an analysis unit (330). The chuck table surface monitoring device (300) may further include an analysis unit (330).

[0083] The analysis unit (330) can analyze the processing results of the processing unit (320). The processing results of the processing unit (320) may be data regarding the chuck table (270). Based on the analysis results, the analysis unit (330) can generate information regarding the surface condition and shape of the chuck table (270). Based on the generated information, the analysis unit (330) can determine whether the plane of the chuck table (270) is a flat surface. Based on the generated information, the analysis unit (330) can determine whether the chuck table (270) contains a hump or a dent on its surface. Based on the generated information, the analysis unit (330) can evaluate the uniformity of the plane of the chuck table (270).

[0084] The processing result of the processing unit (320) may be data regarding the substrate (W). For example, the substrate (W) may be a silicon (Si) substrate. A silicon substrate may have flexible characteristics. If there are humps or dents on the chuck table (270), when the substrate (W) is placed on the chuck table (270), the humps or dents of the chuck table (270) may be expressed on the substrate (W). The analysis unit (330) can estimate information regarding the surface condition and shape of the chuck table (270) based on the analysis result. The analysis unit (330) can determine whether the plane of the chuck table (270) is a flat surface based on the estimated information. The analysis unit (330) can determine whether the chuck table (270) contains humps or dents on its surface based on the estimated information. The analysis unit (330) can evaluate the uniformity of the plane of the chuck table (270) based on the estimated information.

[0085] The analysis unit (330) can identify the location of a hump or dent formed on the chuck table (270) using an absolute coordinate system. The analysis unit (330) can calculate the coordinates of the hump or dent based on the previously determined vertex coordinates of the chuck table (270). However, it is not limited to this, and the analysis unit (330) can also identify the location of a hump or dent formed on the chuck table (270) using a relative coordinate system. The analysis unit (330) can also calculate the coordinates of the hump or dent by utilizing the coordinates of the notch (N) obtained while the substrate (W) is seated as a reference point.

[0086] The analysis unit (330) can map the surface condition and shape of the substrate (W) based on the processing result of the processing unit (320). Alternatively, the analysis unit (330) can map the surface condition and shape of the chuck table (270). The analysis unit (330) can analyze the surface condition and asymmetry (ASY) components that affect IWU (In Wafer Uniformity) even when the substrate (W) is not processed. The asymmetry component refers to the height deviation by radius relative to the plane of the chuck table (270) in contact with the substrate (W), the angle deviation relative to said plane, etc. The analysis result of the analysis unit (330) can be used to identify relative shape differences between multiple chuck tables (270) within the substrate processing device (200). The analysis result of the analysis unit (330) can be used to adjust the dispersion between multiple chuck tables (270) within the substrate processing device (200).

[0087] The analysis unit (330) can analyze the shape of the substrate (W) before and after processing based on mapping data for the substrate (W) placed on the chuck table (270). The analysis results of the analysis unit (330) can be used as a tool to examine the correlation between the mapping before and after processing and the process results.

[0088] The analysis unit (330) can verify the measurement consistency. The positions of the five first sensors (411, 412, 413, 414, 415) may vary, and there may be a height deviation depending on the rotation conditions of the chuck table (270). The analysis unit (330) can verify the measurement repeatability for specific conditions by taking these factors into account. The measurement unit (310) can repeat the measurement multiple times, and the analysis unit (330) can derive a final result by synthesizing the results of the multiple measurements.

[0089] The substrate processing device (200) may include a plurality of chuck tables (270). Referring to FIG. 3, the substrate processing device (200) may include chuck tables (270) in the second part (212), the third part (213), and the fourth part (214) of the base (210), respectively. The analysis unit (330) can analyze the relative shape difference between the chuck tables (270) by comparing the chuck tables (270) of each part (212, 213, 214) with one another.

[0090] The analysis unit (330) can analyze the shape of the chuck table (270) and the alignment of the substrate (W) before processing. The chuck table (270) includes a porous region and may include a porous material in the porous region. The analysis unit (330) can analyze the correlation with the shape difference of the substrate (W) before processing when the shape difference is obtained by measuring the height of the porous material in the same way. The analysis unit (330) can analyze the height profile of the relative height of the substrate (W) to the chuck table (270).

[0091] The measurement unit (310) can measure the height of the substrate (W) without processing after loading it onto the chuck table (270). The analysis unit (330) can generate a height map of the substrate (W) before processing through mapping based on the measurement results. The analysis unit (330) can estimate the surface condition and shape of the chuck table (270) based on the height map of the substrate (W) before processing. The analysis unit (330) can estimate the periodicity and size of the substrate (W) after processing based on the height map of the substrate (W) before processing. Based on the estimation results, the analysis unit (330) can predict the process quality even without processing the substrate (W). The analysis unit (330) can analyze the correlation with the process quality based on the height map of the substrate (W) before processing.

[0092] The processing unit (320) and the analysis unit (330) may be provided as a program including instructions. The processing unit (320) and the analysis unit (330) may be provided as a processor that executes the program. The processing unit (320) and the analysis unit (330) may be provided as a computer equipped with a processor.

[0093] The chuck table surface monitoring device (300) can identify humps and dents before and after processing through mapping of the substrate (W) on the chuck table (270) via the measurement unit (310), processing unit (320), and analysis unit (330), and can provide a measurement methodology for identifying the grinding mechanism through correlation analysis with the process results. The chuck table surface monitoring device (300) can analyze the relative profile differences between multiple chuck tables (270) installed in each part (212, 213, 214) within the base (210), and can also analyze the deviation between multiple chuck tables (270). The chuck table surface monitoring device (300) can reduce the substrate processing steps required to verify the self-grinding effect, and can predict the self-grinding effect in advance through substrate mapping before processing immediately after self-grinding.

[0094] The chuck table surface monitoring device (300) includes a measuring unit (310) and a processing unit (320) and may not include an analysis unit (330). The analysis unit (330) may be constructed separately externally. Although not provided in the drawings, the chuck table surface monitoring device (300) may include a transmission unit to transmit the processing results of the processing unit (320) to the analysis unit (330).

[0095] Although embodiments of the present invention have been described above with reference to the attached drawings, the present invention is not limited to the above embodiments and can be manufactured in various different forms, and those skilled in the art will understand that the present invention can be implemented in other specific forms without changing the technical concept or essential features of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. Explanation of the symbols

[0096] 100: Semiconductor manufacturing equipment 110: Load port module 120: Index Module 130: Cleaning Module 140: Transfer Module 150: Buffer Module 200: Substrate processing device 210: Base 211, 212, 213, 214: Bass parts 220: Road Cup 230: 1st Platen 240: Spindle Assembly 250: Support Frame 260: Exchanger 270: Grinding Pad (Chuck Table) 280: Slurry supply arm 290: Pad conditioner 300: Chuck table surface monitoring device 310: Measurement unit 320: Processing unit 330: Analysis Unit 411, 412, 413, 414, 415: First Sensor 420: Position adjustment unit 430: Angle adjustment unit 440: 2nd sensor 450: 3rd sensor

Claims

Claim 1 A chuck table surface monitoring device comprising: a measuring unit for acquiring data regarding a substrate when a substrate including a notch is placed on a chuck table; and a processing unit for processing the data, wherein the measuring unit comprises a plurality of first sensors arranged in a row and measuring the distance to the substrate; a second sensor for measuring the coordinates of the notch; and a plurality of positioning units for adjusting the height of the plurality of first sensors, wherein the plurality of positioning units independently adjust the height of the plurality of first sensors. Claim 2 A chuck table surface monitoring device according to claim 1, wherein the measuring unit further includes a third sensor for measuring the distance to an exposed portion of the chuck table, and the exposed portion is a portion not covered by the substrate. Claim 3 A chuck table surface monitoring device according to claim 1, further comprising an analysis unit that analyzes the surface condition of the chuck table based on the result of processing the data. Claim 4 In claim 1, the measuring unit is a chuck table surface monitoring device that acquires data after grinding the chuck table. Claim 5 In claim 1, the plurality of position adjustment units includes a number of position adjustment modules equal to the number of the plurality of first sensors, and a chuck table surface monitoring device that independently controls the height of each first sensor. Claim 6 In claim 1, the measuring unit further includes an angle adjusting unit that adjusts the tilting angle of the plurality of first sensors, and the angle adjusting unit independently controls the plurality of first sensors. A chuck table surface monitoring device. Claim 7 A chuck table surface monitoring device according to claim 1, wherein the plurality of first sensors measure the distance to the substrate at regular intervals, and while the plurality of first sensors are measuring, the substrate rotates or the plurality of first sensors rotate in the circumferential direction of the substrate. Claim 8 In claim 3, the analysis unit is a chuck table surface monitoring device that analyzes the location of a hump or dent included in the chuck table based on the coordinates of the notch. Claim 9 A chuck table surface monitoring device according to claim 1, wherein the plurality of first sensors are arranged in a direction from the center of the substrate to the edge of the substrate. Claim 10 A substrate processing device comprising: a chuck table supporting a substrate; a slurry supply arm adjacent to the chuck table and supplying a slurry to the chuck table; a spindle assembly disposed on the chuck table and polishing the substrate in conjunction with the chuck table; and a chuck table surface monitoring device for monitoring whether the surface of the chuck table is flat before polishing the substrate, wherein the chuck table surface monitoring device comprises: a measuring unit for acquiring data regarding the substrate when the substrate including a notch is placed on the chuck table; and a processing unit for processing the data, wherein the measuring unit comprises a plurality of first sensors arranged in a row for measuring the distance to the substrate; and a second sensor for measuring the coordinates of the notch.

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