Process for functionalizing ZnO nanowires with nanocrystalline ZnAl2O4 film

Abstract

The invention relates to the oxide semiconductor engineering and technology, in particular to a process for functionalizing ZnO nanowires with nanocrystalline ZnAl2O4film.The process for functionalizing ZnO nanowires with nanocrystalline ZnAl2O4film consists in producing ZnO nanowires in a furnace, using the flame tranport synthesis (FTS) method; placing the ZnO nanowires on the surface of a thermally oxidized Si wafer, and introducing the wafer into a vacuumed quartz reactor and heated to a temperature of 450°C; Al(C3H7O)3vapors, obtained by introducing Al(C3H7O)3powder into a quartz bubbler, heated to a temperature of 120°C, are transported into the quartz reactor through an argon flow, in the quartz reactor the thermal pyrolysis reaction occurs, obtaining aluminum oxide (Al2O3), which is deposited on the surface of the ZnO nanowires, forming an Al2O3film; the ZnO nanowires coated with a layer of Al2O3film are thermally treated in the quartz reactor at a temperature of 975°C for 2h, where diffusion between both substances and transformation of the Al2O3film into a nanocrystalline ZnAl2O4film occurs.