Vertical power plane module for semiconductor packages

Abstract

The present disclosure relates to a semiconductor package (100, 200, 300), that may include a package substrate (102, 202, 302), a base die (108, 208, 308) arranged on and electrically coupled to the package substrate, and at least one power plane module (110a, 110b, 210a, 210b, 310a, 310b) arranged on the package substrate at a periphery of the base die. The power plane module may include a top surface and a bottom surface, and at least one vertical interleaving metal layer (112a, 112b, 112c, 112d, 112e, 212a, 212b, 212c, 212d, 212e, 312a, 312b, 312c, 312d, 312e, 312f) electrically coupled at the bottom surface to the package substrate. The semiconductor package may further include a semiconductor device (122, 222, 322) including a first section disposed on the base die, and a second section disposed on the power plane module, wherein the second section of the semiconductor device may be electrically coupled to the at least one vertical interleaving metal layer at the top surface of the power plane module.