Tin oxide semiconducting nanomaterial, gas sensor electrode and process for forming the same, and gas sensing device including the gas sensor electrode
PH12019000278B1Active Publication Date: 2026-09-25DE LA SALLE UNIVERSITY
0 Cites 0 Cited by
Patent Information
- Application Number
- PH12019000278
- Authority / Receiving Office
- PH · PH
- Patent Type
- Patents
- Current Assignee / Owner
- Filing Date
- 2016-08-18
- Publication Date
- 2026-09-25
- Estimated Expiration
- 2036-08-18
Abstract
A gas sensing device (20) includes a gas sensor electrode (10), a variable resistor (21) electrically coupled in parallel to the gas sensor electrode (10), and a voltage measuring circuit (22) electrically coupled in parallel to the variable resistor (21). The gas sensor electrode (10) includes a substrate (11) and a gas sensing layer (12) that is formed on the substrate (11) and made of a tin oxide semiconducting nanomaterial having a resistivity not greater than 5000 ohm-meter. A process for forming the gas sensor electrode (10) is also disclosed.
Need to check novelty before this filing date? Find Prior Art