Tin oxide semiconducting nanomaterial, gas sensor electrode and process for forming the same, and gas sensing device including the gas sensor electrode

PH12019000278B1Active Publication Date: 2026-09-25DE LA SALLE UNIVERSITY
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Patent Information

Application Number
PH12019000278
Authority / Receiving Office
PH · PH
Patent Type
Patents
Current Assignee / Owner
Filing Date
2016-08-18
Publication Date
2026-09-25
Estimated Expiration
2036-08-18
Patent Text Reader

Abstract

A gas sensing device (20) includes a gas sensor electrode (10), a variable resistor (21) electrically coupled in parallel to the gas sensor electrode (10), and a voltage measuring circuit (22) electrically coupled in parallel to the variable resistor (21). The gas sensor electrode (10) includes a substrate (11) and a gas sensing layer (12) that is formed on the substrate (11) and made of a tin oxide semiconducting nanomaterial having a resistivity not greater than 5000 ohm-meter. A process for forming the gas sensor electrode (10) is also disclosed.
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