Method of manufacturing a semiconductor device

RU2025105571APending Publication Date: 2026-09-07FEDERALNOE GOSUDARSTVENNOE BIUDZHETNOE OBRAZOVATELNOE UCHREZHDENIE VYSSHEGO OBRAZOVANIIA CHECHENSKII GOSUDARSTVENNYI UNIVERSITET IMENI AKHMATA ABDULKHAMIDOVICHA KADYROVA

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Patent Information

Application Number: RU2025105571
Authority / Receiving Office: RU · RU
Patent Type: Applications
Current Assignee / Owner
Filing Date: 2025-03-06
Publication Date: 2026-09-07

Application Information

Patent Timeline

06 Mar 2025

Application

RU2025105571

07 Sep 2026

Publication

RU2025105571A

IPC: H10D30/01

Inventors: МУСТАФАЕВ ГАСАН АБАКАРОВИЧ; ХАСАНОВ АСЛАМБЕК ИДРИСОВИЧ

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Claims

A method for manufacturing a semiconductor device, including layers of polysilicon, silicon oxide and the formation of a multilayer gate, characterized in that a buried p+ layer is formed under the gate by implanting magnesium ions at a temperature of 200°C with an energy of 220 keV, a dose of 2⋅10 14 cm -2 followed by annealing at a temperature of 725-750°C for 5-10 minutes in a hydrogen atmosphere.