Schottky diodes with high thicknesses and their use as nuclear detectors

SY2025080052AUndetermined Publication Date: 2026-07-31ZAINAB AL-HASSAN +2
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Patent Information

Application Number
SY2025080052
Authority / Receiving Office
SY · SY
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-08-05
Publication Date
2026-07-31
Patent Text Reader

Abstract

The present invention relates to a method of preparing diodes Schottky semiconductor was the first three-layered device used to detect gamma rays. Different cards. The first layer is The second layer is a 1 mm thick copper sheet. It is a semiconductor layer of zinc oxide Prepared using the (50, 100, 200 μm) method with thicknesses Spray painting and a third layer of aluminum Using thermal spraying to secure a thickness of 1 μm Schottky contact, where it was deposited on the surface The oxide layer forms a diode of the type As a result, a detector (Cu / ZnO / Al) was manufactured. These SM diodes use a radiative pattern In nuclear medicine for monitoring and measuring radiation doses and in personal radiation measuring devices, environmental dose measurements in soil or air, especially in areas near nuclear power plants, and in integrated sensing systems in satellites that can be used to monitor cosmic rays and gamma rays in space, combined with low-power electronics.
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