NEW PHOTONIC BOROFEN

Abstract

The invention relates to a novel photonic borophene that can be used in semiconductor technology.

Description

NEW PHOTONIC BOROFEN TECHNICAL FIELD The invention relates to a novel photonic borophene that can be used in semiconductor technology. PREVIOUS TECHNIQUE Borophene is a two-dimensional allotrope of boron and is also known as boron sheet. Borophenes are also known to exhibit in-plane flexibility and ideal strength. Some In its configurations, borophene can be stronger and more flexible than graphene. Borophene is a classic covalent In addition to bonds, crystal structures with metallic-like polycentric bonds, high high strength, covalent bonding with the matrix thanks to reactivity, ultra-high It has hydrogen storage properties and, thanks to its crystalline structure, it can be used superheated at high temperatures. It has conductivity properties. The element borophene has a transformative effect in countless fields. Borophene from health to energy, from information technology to electronic devices, especially in biomedicine. It possesses excellent properties that hold potential for various applications in many fields. Due to its excellent chemical, electronic, mechanical and thermal properties, borophene, Supercapacitors are of great importance in batteries, hydrogen storage and biomedical applications. It also has various biomedical applications such as bioimaging, drug delivery, and photonic therapy. There are borophene nanoplatforms used in applications. However, The high melting point of boron and the growth of borophenes at moderate temperatures, single atoms Synthesizing borophene, a layer of boron approximately the thickness of a thin layer, is quite difficult. This makes it difficult. Therefore, simple, practical, short-term, low-cost borophene production is necessary. methods are needed. DETAILED DESCRIPTION OF THE INVENTION The invention relates to a novel photonic borophene that can be used in semiconductor technology. Our invention produces goods automatically in a controlled and time-dependent manner for the desired duration. In our invention, we first observed borophene in the high-pressure and medium-temperature region, in hydrothermal vents. It is produced by the hydrothermal method. In the first stage of the hydrothermal method, boric acid, acetone, cetyltrimethyl Using ammonium bromide chemicals, the prepared solution is pressurized under high pressure. It is placed in the reactor. Then borophene is subjected to a reaction temperature of 180 °C and 30 hours. It is produced during the reaction time. 1 Borophene In, Si, Ge, As, Se, Sni Sb, Te, Ti, Bi, graphene and graphene oxide doping By folding at least one of its components, borophene is converted into a photonic borophone. Photonic borophene is produced as doped borophene and noncomposite borophene. Photonic The photonic properties of borophene, and its electrical-optical properties, vary depending on the type of dopant material. It varies. With dopants, the optical band gap of borophene is at least 2.40 eV. Photonics The photonic properties of borophene material are in the wavelength range of 200 nm-400 nm. It is controlled by the light it has. The photodielectric constant and photodielectric loss of borophene are controlled by light. Borophene for; polyethylene terephthalate (PET), polyethylene (PE), polyethylene-based polyolefin Elastomers, Polymer Modification (POE), Polypropylene (PP), Styrene Butadiene Copolymer (SBC) and Thermoplastic Polyester Elastomer (TPC) flexible polymer It is prepared as a composite using at least one of its groups. Thus, borophene It is functionalized with polymers, transforming it into a functional material. Function The dielectric constant of borophene is at least 130. Borophene has a photodielectric constant of at least 25 and a photodielectric loss of at least 1. Borophene exhibits photonic dielectric properties in the frequency range of 1-200 Hz and depth range of 200-400 nm. It shows the dielectric properties of borophene in the lights within that range. It is measured. The photodielectric property of borophene changes depending on the intensity of UV radiation and UV The dielectric constant, dielectric loss, and loss tangent factor are determined under radiation. 2 The value is adjusted. UV radiation intensity is at least 200 W / m². Photonic borophene photodielectric. 2 Its properties are controlled by a radiation intensity ranging from 1 W / m² to 1000 W / m². UV radiation imparts memory properties to borophene. Borophene was first treated with UV radiation. It remembers its value, and this property is called the mem-dielectric property. In our invention, borophene is programmed with UV radiation intensity. For programming... The required energy is at least 4.70 eV. Borophene's memory property is controlled by wavelength. It is done. The wavelength covers the UV region. The lowest energy UV ray is 3.4 eV. Memory Its properties are controlled by wavelengths in the 200nm-400nm range. Our invention is writing. 2 2 The process should be done at a light intensity of at least 200 W / m², and the wiping process at a light intensity of at least 10 W / m². does. The optical band gap of photonic borophene is shown in the reflectance-wavelength spectrum. It is calculated. The photonic optical band gap is at least 2.30 eV. Borophene 60 nm blue shift It demonstrates the feature. 2

Claims

1. It is a new photonic borophene with the following properties: In, Si, Ge, As, Se, Sni, Sb, Te, Ti, Bi, graphene. and containing at least one of the graphene oxide doping materials It is characteristic.

2. The photonic borophene mentioned in Claim 1 is characterized by its photonic properties being 200- It is a material controlled by light in the wavelength range of 400 nm. It is characteristic.

3. The photonic borophene mentioned in Claim 1 has the following properties: photodielectric constant and Polyethylene terephthalate (PET) and polyethylene are used to control photodielectric loss. (PE), Polyethylene-based polyolefin elastomers, Polymer Modification (POE), Polypropylene (PP), Styrene Butadiene Copolymer (SBC) and Thermoplastic Polyester Elastomers (TPCs) contain at least one of the flexible polymer groups. It is characteristic.

4. The photonic borophene mentioned in Claim 1 is characterized by having a photodielectric constant of at least... and is characterized by a photodielectric loss of at least 1.

5. The photonic borophene mentioned in Claim 1 has the property of being a photonic dielectric. It is characterized by having a frequency range of 1-200 Hz.

6. The photonic borophene mentioned in Claim 1 is characterized by having a minimum UV radiation intensity. 2 It is characterized by having a power output of 200 W / m².

7. The photonic borophene mentioned in Claim 1 is characterized by its photodielectric property being 1. 2 Material controlled by radiation intensity between W / m² and 1000 W / m². It is characterized by its...

8. The photonic borophene mentioned in Claim 1 is characterized by its UV radiation intensity. It is characterized by being programmed material.

9. The photonic borophene mentioned in Claim 1 is characterized by its memory property being 200- Because it is a material controlled by wavelengths in the 400nm range. It is characteristic.

10. The photonic borophene mentioned in Claim 1 is characterized by its ability to handle writing in at least 200 seconds. 2 2 In terms of W / m light intensity, the wiping process must be carried out at a light intensity of at least 10 W / m. It is characteristic.

11. The photonic borophene mentioned in Claim 1 is characterized by its photonic optical band gap being the widest. It is characterized by having a voltage of less than 2.30 eV. 3