CONDUCTIVE PASTE COMPOSITION, SOLAR CELL PREPARATION METHOD, AND SOLAR CELL.

Abstract

A conductive paste composition, a solar cell preparation method, and a solar cell are provided. The conductive paste composition contains glass frit at a weight of 0.5% to 4%, conductive components at a weight of 80% to 92%, and organic media at a weight of 7% to 16%. The glass frit contains oxides. Based on the molar percentages of the oxides, the glass frit contains 20% to 50% molar B2O3 and also 15% to 50% molar PbO or 15% to 50% molar Bi2O3 or a mixture of 15% to 50% molar PbO and Bi2O3. The ratio of the total cation content of PbO and Bi2O3 to the cation content of B2O3 is between 0.30 and 1.25. After the sintering process, the conductive paste composition can form a passivation layer on the surface of the cell and also provide a low recombination effect of the carriers.

Description

1 CONDUCTIVE PASTE COMPOSITION, SOLAR CELL PREPARATION METHOD, AND SOLAR CELL. Tar%fname This application was submitted to the China National Intellectual Property Administration on 27 September 2023 and is numbered 5 “CONDUCTIVE PASTE COMPOSITION, SOLAR CELL PREPARATION METHOD AND SOLAR CELL” The Chinese Patent Application No. 202311265866.0, titled [Title of Application], is requested as a priority. It is doing so; the content of this application is included here in its entirety as a reference. TECHNICAL FIELD 10 This application relates to the field of photovoltaic devices technologies and specifically to a conductive paste. The combination is a method for preparing a solar cell and is related to a solar cell. BACKGROUND 15 Metallization is used in photovoltaic solar cells to achieve high power conversion efficiency. It is important to effectively remove photo-generated carriers in the production process. It is a step. Currently, the most preferred method for metallization is screen printing. Tunnel an ox%t pass%fleşt%r%lmş kontak yapı %çeren n-TOPCon Hücres% g%b% b%r N t%p% güneş Hücres% 20 %ç%n, a metallization paste that generally contains silver powder and aluminum powder. (Silver-aluminum paste or Ag-Al paste) is used and applied to the solar cell. high to achieve effective metallization on the side (or in the PT%P% doped layer) It is sintered at a certain temperature. During the sintering process, the silver-aluminum paste... glass fr%t, a passivation stack containing S%Nx, S%NOx and AlOx layers, 25 It erodes and opens, so that the metals in the paste react with the underlying PT-p-doped layer. Silver-aluminum pointed microstructures to provide a good ohmic contact. It creates. TECHNICAL PROBLEM 30 Silver-aluminum paste, low resistance ohmic contact with PT-reinforced layer. It can generate, but relatively high carrier recombination leads to open-circuit voltage loss. and causes a loss of cell efficiency; these are the power conversion of Nt%p solar cells. These are important factors affecting efficiency. In addition, high-temperature sintering 35 2 during the passivation of the film by the glass frit in the silver-aluminum paste Erosion or damage further increases the loss of recombination. TECHNICAL SOLUTIONS This application involves 0.5% of the total weight of the conductive paste composition. 4% glass fr%t, 80% to 92% conductive component and 7% to 16% It provides a conductive paste composition containing an organic medium. Glass frit contains oxides. Depending on the molar percentage of the oxides, glass frit contains 20% to 50% oxides. B2O3 contains; and glass fr%t also contains 15% to 50% PbO or 15% to 50% It contains B2O3 or a mixture of PbO and B2O3 in a ratio of 15% to 50%. The ratio of the total cation content of PbO and B2O3 to the cation content of B2O3 is 0.30. It is between 1.25%. 15 In some applications, depending on the molar percentages of the oxides, the glass frit can also be layered. The additive content is less than or equal to 18 mol% of the first additive. b%r%nc% additive% L%2O, Al2O3, ZnO, S%O2, SeO2 and TeO2 are a group of One or more of the selected items are 20. In some applications, depending on the molar percentages of the primary additive oxides It meets at least one of the following conditions: a) The first additive contains L2O and the content of L2O is less than or equal to 15 mol%. 25 b) The first additive contains Al2O3, and the Al2O3 content is less than or equal to 10 mol%. c) The first additive contains ZnO and the ZnO content is less than or equal to 18 mol%. d) The first additive contains S₂O₂ and the S₂ content is less than or equal to 15 mol%. e) The first additive contains SeO2 and the SeO2 content is less than or equal to 15 mol%. f) The first additive contains TeO2 and the TeO2 content is less than or equal to 15 mol%. 30 In some applications, depending on the molar percentages of the oxides, the glass fryer may also contain the following: %content: 0% to 15 mol% L%2O; 0% to 10 mol% Al2O3; 0% to 18 mol% ZnO; and 0% to 15 mol% S%O2. 3 In some applications, depending on the molar percentages of the oxides, the glass frit can also be a second layer. The additive contains less than or equal to 5 mol% of the second additive, and the second The additive consists of a mixture of AgO2, Ag2O, AgO, Na2O, K2O, MgO, CaO, and BaO. one or more selected from the group. In some applications, the conductive paste composition, the total of the conductive paste composition It contains less than or equal to 1% filler by weight. The filler is... a group consisting of aluminum powder, silicone powder and aluminum-silicone alloy powder The selected items contain at least one. In some applications, the weight percentage of the filler in the conductive paste composition. It can be greater than 0% and less than or equal to 1%. In some applications, the filler Dv50 value is between 1 μm and 4 μm; where Dv50 is particle 15 where the cumulative volume percentage of the filler reaches 50%. It represents its size. In some applications, the conductive component is silver, silver alloys, silver oxides, and It is one or more components selected from a group of silver salts. In some applications, a conductive paste compound forms the initial conductive structure in a solar cell. It is used for; a solar cell, a substrate and a sensor located on at least one side of the substrate. It contains a passivation layer. During the solar plating and sintering process, conductive paste. b%leş%m%, %lk %tişken yapıyı %kır%ağ%n pas%vatasyon katın er%l%r. In some applications, the substrate contains an nt%p%-doped semiconductor substrate. In some applications, this application also includes a solar panel that involves the following steps: The preparation method provides: Providing a base plate; where the base plate is a substrate, a pt%p% additive layer and a passivation layer contains a pt%p-added layer, a substrate with passivation. It is located between the layers; 4 Applying the conductive paste mixture to the passivation layer; Sintering process on the base plate to which the conductive paste compound is applied. %r%lmes%, so that the %conductive paste by eroding the passivation layer and forming the first conductive structure; and 5 Laser-enhanced contact on the base plate to obtain solar cells. optimization process is carried out. In some applications, the application of a conductive paste compound to the passivation layer is 10 My steps include the following: The conductive paste composition must have a patterned design on at least one part of the surface of the passivation layer. implementation in a way. In some applications, laser-enhanced contact optimization is used on the base plate. The %transaction% execution step also includes the following: To create an induced current in the first conductive structure, reverse the base plate. Polarization is applied and laser scanning is performed simultaneously on the base plate. 20 realization. In some applications, the method meets at least one of the following conditions: g) The solar cell has a breakdown voltage and is 25 times higher than the reverse polarity breakdown voltage. It is low; h) The duration of the laser scan is between 1 ms and 100 ms; and The induced current is between 100 A and 1000 A. In some applications, this application also includes the first 30% made from %conductive paste composition. b%r %conducting structure %contains b%r solar cell. In some applications, this application can also be implemented using the method mentioned above. It provides a solar cell that is produced. In some applications, the solar cell contains a tunnel oxide passivated contact structure. The sun is a cell. BENEFICIAL EFFECTS 5 The conductive paste composition used in the application is the metallization of the solar panel's side. It is applicable to %ç%n. After sintering, the conductive paste compound has a high carrier capacity. without causing recombination loss, the passivation layer on the cell surface It can cause corrosion. By limiting the ratio of Pb+B to B in the glass frit, conductive paste 10 excessive recombination resulting from the erosion of the passivation layer by the composition The loss can be reduced and the corrosion resistance of the glass frit can be further improved. According to the solar panel preparation method presented in this application, the conductive paste used... After the composite is sintered, the passivation layer must be properly abraded. 15 This is ensured, which reduces carrier recombination loss. Furthermore, it is laser-enhanced. referring to contact optimization technology, large produced by laser A certain amount of carrier is directed to the initial conductive structure by applying reverse polarization and An induced current is produced. The energy produced by the induced current is transferred to the initial conductive structure. It improves contact and contact homogeneity. The carrier of the conductive paste composition used is 20 Higher open circuit voltage obtained as a result of reducing recombination loss. With this, the conversion efficiency of the solar cell can be significantly increased. BRIEF DESCRIPTION OF THE DRAWINGS To explain the technical solutions in the concrete examples of this application more clearly. For this reason, the following explanations briefly detail additional solutions that explain concrete examples. is being introduced. The additional solutions included in the explanations below are only for this application. some concrete examples were shown and the creative effort of an expert in the field It is clear that other solutions besides these additional solutions can be developed without spending money. 30 Figure 1 is a cross-sectional view of a solar cell, according to a concrete example of this application. 6 Reference numbers: 10, base plate; 20, first conductive structure; 30, second conductive structure; 101, substrate; 102, PT%p% additive layer; 103, passivation layer; 104, tunnel oxidation layer passivation layer; 105, n+ polycrystalline silicone layer; 106, second passivation layer. DETAILED EXPLANATION Below are the technical solutions in concrete examples of this application. by referring to the attached solutions of the examples in a clear and complete manner is explained. The concrete examples explained are %n, all concrete examples in this application are 10%. It is clear that there are no, only some examples. What are the concrete examples of this application? based on, without creative efforts, obtained by an expert in the field All other concrete examples will fall within the scope of protection of this application. In the description of this application, the terms “up”, “down”, “top”, “bottom”, “%ç” or “outside” are used in 15 a specified direction or position relationship is a direction or position shown in the attached drawings. It is based on %l%rşk%s%ne, merely to facilitate explanation and this application. It is for the purpose of simplification and the device or element in question has a specific direction. to indicate that it should be or must be built or operated in a particular direction or It should be understood that it does not aim to %ma. Therefore, this application b%r 20 This should not be understood as a limitation. In the explanation of this application, the specifics are... Unless restricted, the expression "many" means "two or more", and the expression "at least one" means one or two. It means "or more". Metallization is used to achieve high opto-electrical conversion efficiency in photovoltaics. To effectively extract photo-generated carriers in the solar cell manufacturing process It is an important step. Screen printing is currently the most suitable method for applying metallization paste. It is a highly preferred method. A tunnel containing an oxide-passivated contact structure. TOPCon solar p%l% g%b% b%r N t%p% solar p%l% %ç%n, solar p%l%n%np side (or pt%p% To achieve a metallization effect (in a doped layer), silver powder and 30 are generally used. a metallization paste containing aluminum powder (silver-aluminum paste or Ag- (Al paste) is applied and sintered at high temperature. Silver-aluminum The glass frit in the paste contains a substance called Snx, Snox and AlOx, which is released during the sintering process. The passivation film erodes and opens; this causes the metal in the paste to be exposed to the PT-reinforced layer. 7 reacting to form high ohm contact silver-aluminum pointed structures It allows for a silver-aluminum paste, with a PT%p% additive layer, to achieve low resistance. Although ohm%k contact can be formed, relatively high carrier recombination (carrier (recombination loss) causes open circuit voltage loss and efficiency loss, and this It also affects the power conversion efficiency of the solar panel. In addition, the surface of the base plate 5 Since passivation has a significant effect on carrier recombination, glass frit in silver-aluminum paste during high-temperature sintering by passivation film erosion or damage recombination It further increases the loss. Considering the above, a low carrier recombination loss effect is obtained. and metallization method%n%n higher open circuit voltage and therefore more to ensure high photovoltaic power conversion efficiency, a conductive material paste composition, a method of preparing a solar cell, a solar cell and especially the p side It is necessary to provide a conductive paste that can be applied. 15 This application includes some application examples, with a doped layer of a solar panel. to create low carrier recombination and low resistance electrical contact A conductive paste is used to provide a connection. According to the conductive paste composition given in some application examples of this application, %conductive paste composition, %conductive paste composition weight percentage between %0.5% and %4 Glass frit contains 80% to 92% conductive components and 7% to 16% organic medium. Glass frit It contains oxides. Depending on the molar percentages of the oxides, glass frit contains 20% to 50% B2O3; and glass fr%t also contains 15% to 50% PbO or 15% to 50% B2O3 or 15% to 50% PbO and 25 The mixture of B2O3 contains the sum of the cation contents of PbO and B2O3, which is the sum of the cation contents of B2O3. The percentage of content is between 0.30% and 1.25%. In conductive paste compositions, glass frit and conductive components are used as solid components; organic medium, dispersing and printing the solid components in the conductive paste composition 30 It is used to ensure its performance. All components in the conductive paste composition. The sum of the weight percentages is 100%. Cation content is the percentage of a chemical substance. It expresses the amount or ratio of cations. In a chemical formula, a cation is usually... It is a positively charged ion. 8 Each component is explained separately below. Glass Fr%t In some applications, glass frit is a mixture containing one or more types of anions and cations. It expresses a combination. Glass frit may melt and flow during heating. Glass frit may partially or completely melt. It can be completely amorphous or partially crystalline. In some applications, glass fr%t may be understood as a mixture containing oxide components and 10 The percentage by weight of glass frit content in the conductive paste composition is between 0.5% and 4%. In other applications, the weight percentage of glass frit content in the conductive paste composition. It can be 1.0% to 3.8%, 1.5% to 3.5%, 2.0% to 3.0%, or 2.2% to 2.8%. Conductive paste. To ensure that the sum of the weight percentages of all components in the combination is 100%. %ç%n %conductive paste composition requires adjustment of the glass fr%tm%qtar.% 15 It should be understood that glass fringing directly affects melting, fluidity, and abrasiveness. effects. Therefore, to achieve a perfect effect in carrier recombination glass fr%t%n%nb%leş%m%n%n %y% dengelenmesim % gerek%r. In some applications, depending on the mole percentage of the oxides, the glass fr%t% is at least 20% below Components contain: 15 to 50 mol PbO and / or B2O3 and 20 to 50 mol B2O3. In the following description, unless otherwise specified, the contents of each component of the glass frit “mol%”s% expresses the percentage of moles based on oxides. Also, 15% to 50% mol corresponds to... the range is greater than or equal to 15 mol% and less than or equal to 50 mol% can show and the same applies to others. 25 In some applications, for example, glass frit, depending on the molar percentages of oxides It contains 20 to 40 mol% PbO and / or B2O3 and 30 to 40 mol% B2O3. In some applications, PbO, B2O3, or a combination thereof, has a low melting point. It can form a glass with a certain fluidity and a certain point of flow. PbO and B%O2, sintering During this process, it can erode the passivation layer and lower the melting point of the glass. It has the function of improving the fluidity of the glass. 9 In some applications, B2O3 acts as a glass former and has a low melting point. It can form a glass that has good fluidity. B2O3 stabilizes the glass. a network that helps and improves the adhesion ability of the molten glass to the base plate It can form a structure. In some applications, the total cation content of PbO and B2O3 in the glass fryer is higher than that of B2O3. The cation content ratio is between 0.30 and 1.25. For example, the ratio is 0.30, 0.32, 0.34, 0.36, 0.38, 0.40, 0.45, 0.50, 0.55, 0.60, 0.65, 0.70, 0.75, 0.80, 0.85, 0.90, 0.95, 1.00, 1.05, Any one of the values ​​1.10, 1.15, 1.20, 1.21, 1.22, 1.23, 1.24 or 1.25 Any of the values ​​above may be a range between them. Pb+B to B 10 By limiting the cation ratio, the abrasive ability of the glass fringe can be improved. PbO's Since its abrasive ability is stronger than B2O3, in glass fr%t%nb%leş%m%ndek% The abrasive ability of the glass frit can be adjusted by replacing a portion of the PbO with B2O3. When the above cation ratio range is achieved, the cation ratio of Pb+B%n%n to B is adjusted. The abrasive properties of the glass fr%t%n can be controlled, thus controlling the open circuit voltage and consequently 15 Photovoltaic power conversion efficiency is significantly improved by using low carrier recombination effect%s% can%be%l%r%. In some applications, glass fr%t can also be 18 mol% or more depending on the mol percentage of oxides. It contains a small amount of primary additive and the primary additive is L%2O, Al2O3, ZnO, S%O2, SeO2 20 and one or more of TeO2 are selected. In another example, glass frit, oxides Depending on the mole percentages, it contains 3% to 15% mole of the primary additive. One In another example, glass fr%t contains between 6% and 10% mol% oxides, depending on their molar percentages. It contains the first additive in percentage. In some applications, the first additive is used to modify the glass frit and It may also contain a glass former or a glass modifier. Preparing a glass frit. In the process, a glass former is used to form the initial network structure of the glass. Additional glass When the condenser is added to the glass mesh structure, the first mesh created by the glass condenser Its structure changes and the original properties of the glass change. Each 30 in the first additive The component's content can be adjusted depending on the desired glass properties and performance. In some applications, TeO2 or SeO2 are used as glass formers to increase fluidity. It can be used. The SeO2 content in the glass fryer is 15 mol% or more, depending on the molar percentages of the oxides. It is less. The TeO2 content in the glass fryer is 15 mol% or less, depending on the molar percentages of the oxides. is less. In another example, the SeO2 content in a glass fryer is related to the molar percentages of the oxides. According to this, it is 5 mol% or more and 10 mol% or less. In another example, glass fr%t%ndek% TeO2 or SeO2 %content%, depending on the mole percentages of oxides, is 5 mol% or more. It is more than 7.5 mol% or less. 5 In some applications, L₂O₃ is used as a glass replacement agent. In the appropriate amount, L₂O₃ can replace the glass. It can increase its fluidity. Since L2O has an abrasive effect, the amount of L2O is a certain amount. It should be checked in the interval. The L2O content in the glass fryer is based on the molar percentages of the oxides. It is 15 mol% or less. In another example, the L2O content in the glass fryer is 10 mol% of oxides. The percentages are 5 mol% or more and 10 mol% or less. The above percentages... In December, the fluidity and abrasive properties of the glass can be improved. In some applications, Al2O3, as a glass former, can stabilize the glass phase, thus improving the quality of the glass. It can increase the melting point and decrease the fluidity. The Al2O3 content in the glass fryer is 15 The oxide percentages are 10 mol% or less. In another example, glass... fr%t%ndek% Al2O3 %content%, 3 mol% or more and 7% depending on the mol percentages of oxides. is mole or less. In the above range, the increase in glass transition temperature is minimized. %nd%r%leb%l%r. In some applications, ZnO is used as a glass replacement and the appropriate amount of ZnO %laves% can%%in%%el%el%l%r% electrical performance. ZnO% content% in glass frit%, oxides%n moles According to percentages, it is 18 mol% or less. In another example, ZnO in glass fryer. %content, according to the molar percentages of oxides, 6 mol% or more and 12 mol% or more It is less. In the range above, the melting of the glass fryer and 25% to facilitate glass preparation. Integration is recommended. In some applications, S₂O₂ is used as a glass former, and the appropriate amount of S₂O₂ is required. %laves% can stabilize the glass phase, increase the melting point of the glass and improve its fluidity. It can reduce it. S%O2 can also improve the stability of the glass frit. The S%O2 content in the glass frit is 30 The oxide percentages are 15 mol% or less. In another example, glass fr%t%ndek% S%O2 %content%, depending on the mol percentages of oxides, is 3 mol or more. and 10 mol% or less. Within the above percentage range, glass transition occurs during sintering. 11 By adjusting the temperature and glass fluidity, the abrasive properties are controlled during sintering. ed%leb%l%r. In some applications, depending on the molar percentages of oxides, glass frit contains between 15% and 50% molar. PbO and / or B2O3, 20% to 50 mol% B2O3, 0% to 15 mol% L%2O, 0% to 10 mol% 5 It contains Al2O3, 0% to 18 mol% ZnO, and 0% to 15 mol% SO2. In some applications, depending on the molar percentages of oxides, glass frit contains between 15% and 50% molar. PbO and / or B2O3, 20% to 50 mol% B2O3, 0% to 15 mol% L%2O, 0% to 10 mol% Al2O3, 0 to 18 mol% ZnO, 0 to 15 mol% S%O2 and 0 to 15 mol% SeO2 or 10 TeO2 contains %r. In some applications, glass fr%t can also contain up to 5 mol% depending on the molar percentages of oxides. or contains a smaller amount of a second additive, and the second additive is AgO2, Ag2O, AgO, Na2O, K2O, MgO, CaO, and BaO are one or more of the selected substances. 15 The second additive, as glass modifiers, in cooperation with the first additive. that the melting point and fluidity of the glass fr%t%n%n could be further altered and It is understandable that he / she can adjust it. Conductive Component 20 In some applications, the conductive component ensures the conductivity of the conductive paste compound. %ç%n is used and the %conductive component in this application, especially, but not limited to, an electrode formed on a base plate such as a semiconductor base plate You can use commonly used metal powder. Examples of metals include silver, 25 gold, copper, nickel, palladium, platinum, aluminum and their alloys and mixtures These are found, but are not limited to. Alternatively, the conductive component is a perfect Due to its malleability and high conductivity, it is composed primarily of silver. In some applications, the weight of the conductive component in the conductive paste composition is 30 The percentage is between 80% and 92%. In some other applications, conductive paste is used. b%leş%m%ndek% %letken c%ен%n ağır kilometres% %82 %la %90, %85 %la %88 or %86 ​​%la It could be 87%. Adjusting the amount of conductive component in the conductive paste mixture, %conductive paste composition: the sum of all components' weight percentages is 100% 12 It should be understood that this must be ensured. The conductive component, after the solar cell is formed. It is then configured to ensure the conductivity of the electrode. In some applications, this application involves a %conductive paste composition with a %conductive component metal. It may be powder. Alternatively, the conductive component may be 5% or more metals or alloys. It can be a mixture. The metal can also be thermally combined to form the corresponding metal(s). It can also be obtained with a decomposable metal oxide or metal salt. Metal powder silver powder When this happens, if the metal powder is silver powder, then silver, silver oxide, or silver salt alloy and a mixture of these, and also Ag2O or AgO etc. silver oxide or AgCl, AgNO3, AgOOCCH3 (silver acetate), AgOOCF3 (silver 10 tr%fluoroacetate), Ag3PO4 (silver orthophosphate) and other silver salts or any of these It can be understood that the mixture contains %. In some applications, the conductive component can be in powder, flake, spherical, rod, granular, nodular, or layered form. or coated, in other irregular forms or a combination thereof, such as 15 It can be provided in the form of finely dispersed particles. In some applications, the average particle size of the conductive component ranges from 0.5 μm to 3.5 μm. It is within the range. In another example, the conductive component has an average particle size of 1 μm and 3 μm. It uses spherical silver powder with a particle size between μm. In another example, the conductive component is 20 It uses spherical silver powder with an average particle size between 1.5 μm and 2.5 μm. In another example, the conductive component is spherical with an average particle size of approximately 2 μm. It uses silver powder. The main function of silver powder is to obtain electrical conductivity. %ç%ns%nterleme %şlem%den sonra Yoğun b%r pek%lde s%interled% silver electrode to create. 25 Organic Environment In some applications, in addition to conductive components and solid components containing glass frit, To distribute the solid components mentioned above and to have a certain viscosity and rheology. 30 organic medium as liquid phase in conductive paste composition to form paste It is used. The organic medium, the conductive component mentioned above, and the glass fryer are used for a long time. It ensures even distribution and stability throughout, and also the %conductive paste composition, 13 With the serigraphic printing method, the expected b%r is applied to the passivation layer of the base plate. It allows for application with a pattern. In some applications, the organic medium may contain a polymer and an organic solvent. The polymer, It may contain cellulose, resin, esters and the like. Cellulose, methylcellulose, ethylcellulose, 5 carboxymethyl cellulose, hydroxyethyl cellulose, benzyl cellulose, propyl cellulose, n%trocellulose or a mixture of these, such as cellulose resins. Resin, wood resin, phenolic It contains resin, acrylic resin, or a mixture thereof. Esters are low alcohols. Contains polymethacrylate or similar substances. Organic solvent, terpineol, deethylen glycol butyl ether acetate, d%et%len gl%kol et%l ether acetate, prop%len gl%kol d%acetate, α-terpene, β-terpene, 10 May contain d%but%l phthalate, but%lcarb%tol, but%lcarb%tol acetate, hexand%l or similar%n%%. In some applications, the viscosity and rheology of the organic medium, including screen printing, are important. This includes, but is not limited to, making it suitable for printing methods. Organic medium, a non-ionic surface to adapt to the different requirements of the organic environment 15 active substance, thixotropic substance, a dispersant or a rheological substance, or another substance like that It may also contain auxiliary substances. Filler % In some applications, the weight percentage of filler in the conductive paste composition is 0%. It is between % and %1 and the filler material is aluminum powder, silicone powder or aluminum- It is at least one of the silicone alloy powders. In some applications, p-doped layers are used to obtain ohmic contact with n-TOPCon solar 25. p%ller% %ç%nt%car% olarak tem%n ed%bl%len gümüş macunu (bu hile alüm%nyum- Unlike aluminum powder (known as silver paste), in this application By adding aluminum powder as a filler, a higher open circuit voltage is obtained. This is to modulate the abrasive ability of the glass fringes. In the open circuit voltage. It can be understood that the increase is due to the amount of aluminum powder added. The reason for this is 30 By adding a small amount of aluminum powder to the conductive paste mixture, at high temperatures During the sintering process, a small amount of aluminum or alumina is mixed with the molten glass frit. dah%l ed%leb%lmes%d%r. The increase in aluminum oxide content of the molten glass frit increases its fluidity. and reduces its abrasive ability and also causes less damage to the passivation film. This 14 Therefore, the effect of adding a small amount of aluminum powder to the conductive paste mixture, This will cause an increase in open circuit voltage due to lower recombination. However, the amount of aluminum powder added to the conductive paste mixture. It should be limited because excessive amounts of molten glass are added to the fryer during sintering. Adding aluminum or alumina greatly reduces its corrosion resistance, and this 5 This can also have a negative effect on the filler factor. In another example, the weight percentage of filler in the conductive paste composition is 0%. It is between 0.75% and 0.75%. In another example, the weight percentage of the filler in the conductive paste composition. any one of 0.25%, 0.50%, 0.75% and 1.0% or two of them It is in December. In some applications, the filler Dv50 value is between 1 μm and 4 μm and 15 Dv50 corresponds to the percentage of filler material reaching 50% of cumulative volume. It represents the particle size in %. In another example, the Dv50 value of the filler is 1 μm. It is between 3 μm. In another example, the Dv50 value of the filler is approximately 2 μm. μm'd%r. In some applications, glass powder is a widely used material in the field of glass production. It can be produced using the method. For example, the glass fritization and ratio described in the example. According to this method, oxides are mixed, added to a crucible (e.g., a platinum or ceramic crucible), and then... They are heated to a high temperature (e.g., 800°C to 1400°C) and the oxides melt together. It is left to stand for a certain period of time. The molten material is then rolled into 25 layers with a thickness of 0.25 mm to 0.50 mm. between stainless steel cylinders that rotate in opposite directions to form a layer including passing through, pouring into a thick stainless steel plate or pouring into water It can be cooled in any suitable way, including but not limited to these. Furthermore... Then, the resulting glass frit is a powder with a particle size of 0.5 μm to 2 μm and a Dv50 ratio. It is ground using a common grinding technology to form it. 30

[0088] In some applications, the methods for preparing the %conductive paste composition are as follows: %çereb%l%r: Mixing, distributing and applying paste according to the components described in the applications. distributing %processes%n%n%r%lmes%, three s%l%nd%rl% paste using a%r mill% dispersion and grinding of the composition to a size finer than 10 μm and then further filtering operations are performed. In some applications The amounts of added glass frit and aluminum powder may vary; these contain equal amounts of silver. The dust can be changed by % and the amount of other values ​​such as the organic environment remains unchanged. Glass Adjustment of the percentages of fr%t, conductive component, organic medium and filler, 5 The sum of the weight percentages of the components in the conductive paste must be 100%. It must provide. In some applications, this %conductive paste compound in this application is the first in a %solar cell. It is used to form the conductive structure (20). The solar cell contains a substrate (101) and the bottom 10 layer (101), at least one passivation placed on the main surface and on the main surface. It has a layer (103). The conductive paste composition undergoes passivation during sintering. By eroding the layer (103), it can form the first conductive structure (20). A low carrier 15 is placed between the conductive structure (20) and the substrate (101) pt%p% semiconductor. It can be understood that an electrical connection with a recombination can be formed. A%r In the example, pt%p% semiconductor, pt%p% doped layer could be and substrate 101, nt%p% doped. It could be a semiconductor substrate. Also, in TOPCon solar cells, the PT-doped layer. pt%p% emitter also called%r. Solar P%l% As shown in Figure 1, some application forms of this method involve a solar cell. It provides. Solar panel, tunnel oxide passivated contact structure (Tunnel Oxide Passivated (Contact Points) Contains and the conductive paste mixture mentioned above, 25 of the solar cell. It is used during preparation. In some applications, the tunnel oxide passivated contact structure solar cell, TOPCon This is called a solar panel (Tunnel Oxide Passivated Contact Point Solar Panel). solar cell, a load-carrying channel 30 to increase the efficiency and performance of the solar cell. TOPCon uses a tunnel oxide layer and a surface passivation layer. solar panels have low electron reflectance and surface recombination, as well as high It has high photototal conversion efficiency and low electronic defects. 16 In some applications, TOPCon solar cell base plate (10) and first conductive structure (20) %container and base plate (10), a %sublayer (101), on one side of the base (101) a pt%p% doped layer (102) and the pt%p% doped layer (102) from the substrate (101) contains a passivation layer (103) formed on the far side. Figure 1 example It was used as follows. The substrate (101) is located in the middle of the TOPCon solar p%l%n%n and nt%p% 5 It can be a doped semiconductor substrate. Pt%p% doped layer (102), nt%p% doped semiconductor It is located on the front side of the conductive substrate and the passivation layer (103), pt%p% additive The conductive structure (20) is located on the surface of the layer (102). It penetrates a small part and forms an electrical connection with the PT-doped layer (102). It creates. 10 In some applications, as shown in Figure 1, the base plate (10) also includes: A tunnel located on the back side of an nt%p% doped semiconductor substrate oxide passivation layer (104); tunnel oxide passivation away from nt%p% doped semiconductor substrate b%r n+ pol%kr%stal s%l%kl%t s%l%kon layer (105) located on the side of layer (104); Tunnel oxide 15 n+ polycrystalline silicone layer (105) which is far from the passivation layer (104) A second layer of passivation (106) is deposited on the side. In some applications, as shown in Figure 1, the TOPCon solar cell can also have a second one. The conductive structure (30) contains the second conductive structure (30), the second passivation layer (106) contains at least 20 It penetrates a small part and forms an electrical bond with the n+ polycrystalline silicone layer (105). It establishes a connection. In some applications, the front is the side that receives sunlight and is also the sun's rays. The working surface of the solar panel is the back side of the solar panel and is generally directly 25° It does not receive sunlight. In some applications, the first tunnel oxide passivation layer (104) and n+ polycrystalline A silicone layer (105) is formed by passing a tunnel oxide layer through contact method. In some applications, the first conductive structure (20) is the conductive paste composition in this application. It is formed with %. The conductive paste composition forms a passivation layer in a desired pattern. (103) It is applied to at least a part of the surface. In the subsequent intersintering process, The conductive paste composition is electrically connected to the pt%p% doping layer (102). 17 and to obtain the first conductive structure with low carrier recombination (20) It penetrates the passivation layer (103). In some applications, %k%nc% conductive structure (30), Pt%p% or Nt%p% crystal silicon solar cells %ç%nt%car% as supplied, for example, a silver paste containing Pb-Te-O glass powder 5 You can use a silver metallization paste. The conductive paste composition can be used to achieve the desired result. The second passivation layer (106) is applied to at least one part of the surface of the pattern. In the sintering process, silver paste containing Pb-Te-O glass powder undergoes secondary passivation. It erodes the layer (106) and penetrates the n+ polycrystalline silicone layer (105). It creates electrical contact. 10 An example of this application is preparing a solar cell, which involves the following steps: The method provides: 4) a base plate (10) is provided; base plate (10), a substrate (101), bottom 15 a p%p%-doped layer (102) formed on one side of the layer (101) and p- b%r formed on the far side of the substrate (101) of the t%p% doped layer (102). Passivation layer (103) contains. A trivalent element (such as boron or gallium). by doping the front side of the substrate (101), nt%p% doped semiconductor substrate A pt%p% additive layer (102) is formed on the front side of the layer. Passivation 20 layer (103), using the b%rb%k%kt%rme method, the pt%p% doped layer (102) It is deposited on the surface. 2) The %conductive paste composition provided in this example should be applied to the passivation layer (103). Application. Specifically, conductive paste compound, screen printing, etc., in a desired design. 25 The passivation layer (103) is applied to at least part of the surface. In this example, the conductor The paste composition, containing the tunnel oxide passivation contact structure of the solar panel P It can be understood that it is used as a finger grid on the side. TOPCON for solar cells. Four screen printing machines are generally used to apply metallization pastes. These are used and are respectively the rear bar, rear finger grille, front bar and front finger 30 It corresponds to the grid. In this example, the conductive paste composition is generally the fourth. The finger grid on the P side of the screen printing machine, which is the front finger grid %ç%n is used. 18 3) By eroding the passivation layer (103) of the conductive paste composition, the first conductor to form the structure (20) the base plate (10) and the conductive paste combination s%nterlenmes%. Also, the preparation of the second conductive structure (30), the first conductive structure (20) is the same as the preparation. 4) Laser-enhanced contact on the base plate (10) to obtain solar cells. optimization realization. The sequence numbers of the steps above are a limitation on the order of the steps. Unacceptable. 10 In some applications, Step 4, laser-enhanced contact optimization, a solar... The electrical contact of the metallization paste is achieved by using a laser in the production process. It is an improvement method. The basis of laser-enhanced contact optimization technology. The principle is that a large amount of carrier produced by a laser is subjected to an applied voltage of 15 its bias is directed along the %le s%interlenm%ş parmak Izgarası birlikte yilend%r%lmes%d%r; here the carrier the heat generated by the current flowing through it affects the contact resistance and contact homogeneity. It improves overall contact performance, reduces contact defects, and The efficiency and reliability of solar panels are increased. In this technology, carrier injection The amount is to achieve better contact homogeneity and optimize the improvement effect. 20 This can be controlled using parameters such as laser power and laser scanning speed. In some applications, laser-enhanced contacts are placed on the base plate (10). The optimization step also includes: in the first conductive structure (20) While laser scanning is performed on the base plate (10) to generate the induced current 25 Reverse bias application to the base plate (10). Laser-reinforced contact. Optimization technology reduces contact resistance and opens by processing the conductive structure. It can be used to help increase circuit voltage and improve efficiency. In some applications, reverse polarity is lower than the breakdown voltage of the solar panel. 30 In some applications, laser scanning lasts between 1 ms and 100 ms. For example, laser scan time 1ms, 2ms, 3ms, 5ms, 10ms, 20ms, 30ms, 40ms, 50ms, 60ms, 70% 19 ms, 80 ms, 90 ms or 100 ms or any part of the above values There may be a range between them. In some applications, the induced current is between 100 A and 1000 A. For example, %Induced current 100 A, 150 A, 200 A, 250 A, 300 A, 350 A, 400 A, 450 A, 500 A, 550 A Any of A, 600 A, 650 A, 700 A, 750 A, 800 A, 850 A, 900 A, 950 A or 1000 A It can be a range between any of the values ​​above or between two of the two. Below, the technical solutions to this application are further explained with reference to specific examples. It is explained in detail. 10 The contents of the components in the glass fryer samples from Example 1 to Example 13 and Comparative Example 1 to Comparative Example 4 show the percentages in glass fr%t. The contents of the components are shown in Table 1. For examples and comparative examples, see... The sum of the percentages of components in the glass fryer is 100%. Each value in Table 1 is 15 mol. The percentage is %d%r (mol%). In Comparative Examples 1 and 2, the (Pb+B%) / B cation ratio is 0.30%. It is not within the 1.25 range. The initial additive added in Comparative Examples 3 and 4 is... The TeO2 content is very high. Table 1 20 PbO Bi2O3 B2O3 SeO2 TeO2 Li2 HE Al2O3 SiO 2 Zn HE Ca HE Ba HE (Pb+B) / B Cation Ratio Rate Example 1 40 / 40 / / / 1 13 6 / / 0.50 Example 2 20 10 50 / / / 1 13 6 / / 0.40 Example 3 / 30 50 / / / 1 13 6 / / 0.60 Example 4 / 15 50 / / 15 1 13 6 / / 0.30 Example 5 50 / 20 / / / 3 15 12 / / 1.25 Example 6 40 / 25 / / / 7 10 18 / / 0.80 Example 7 45 / 30 / / / 10 3 12 / / 0.75 Example 8 20 10 50 / / / 1 8 6 5 / 0.40 Example 9 20 10 50 / / / 1 8 6 / 5 0.40 Example 10 30 / 35 15 / / 2 12 6 / / / 0.43 Example 11 30 / 42.5 / 7.5 / 2 12 6 / / 0.35 Example 12 30 / 35 / 15 / 2 12 6 / / 0.43 Example 13 20 10 35 / 15 / 2 12 6 / / 0.57 They met rmali Example 1 60 / 20 / / / 1 6 13 / / 1.50 They met rmali Example 2 / 60 / / / 1 13 6 / / 0.17 They met rmali Example 3 / 27.5 / 22.5 / 2 12 6 / / 0.55 They met rmali Example 4 / 20 / 30 / 2 12 6 / / 0.75 Table 1 shows Sample 1 %13'tek% glass frit and Comparative Sample 1 %14'tek% glass frit. Conductive paste compounds were prepared using this method, and solar cells were produced, and then... The corresponding Example 14 yielded 26% and Comparative Example 5 yielded 8%. Example 14 %la 26'dak% b%tm%ş güneş p%ller%n%n and Comparative Example 5 %la 8'dek% p%ller%n 5 The performance was evaluated and the results are shown in Table 2. In the conductive paste compositions in Example 14 to 26 and Comparative Example 5 to 8, glass fr%t %çer%ğ%n%n weight percentage% %1.5't%r; %conductive component, average particle size 2 μm It uses global silver powder and the conductive component glass frit content is 10% by weight. It is 89.5%; and the weight percentage of the organic medium content is 9%. The organic medium especially It contains: 1.5% ethylcellulose, 1.5% polyvinyl butraldehyde copolymer (PVB), 1.6% d%et%len gl%kol but%l ether acetate, 0.3% s%l%cone oil, 0.15% Duomeen TDO (am%n ox%t (non-ionic surfactant), 0.15% Br%j L4 (polyoxyethylene alcohol) (non-ionic surfactant), 0.4% Thxotrol plus (rheological agent), 2.8% 15 d%ol (Ethoxylated Alcohol C12) and 0.6% dibase acid ester. Conductive paste composition. The specific preparation process is as follows: The above components are brought together and mixed. 21 and dispersed, then processed using a three-cylinder mill to a finer than 10 µm It is ground to a fineness and then further filtered. The preparation process is as follows: First, a semi-finished TOPCon solar cell (or (commonly known as blue wafer) is prepared and the relevant back bar, back finger 5 The grid, front bar and front finger grids are printed using four screen printing machines; %conductive paste composition is applied as the front finger grid on the P side; %conductive The paste composition will erode the passivation layer during the sintering process. The base plate and conductive paste are sintered together on the P side of the base plate. A conductive structure is obtained; and laser-enhanced contact is made on the conductive structure. A solar cell is obtained by performing optimization. The performance evaluation data shown in Table 2 were analyzed using the following methods: It has been measured: 4) Suns-Voc test%: Suns-Voc test% is performed using the S%nton WCT120 test device. This is done after sintering. The measured Suns-Voc is after sintering. Characterizing the carrier recombination performance of different conductive pastes. It is used to compare and contrast. b) IV test: Photovoltaic power conversion efficiency (Eff) of the solar cell, open circuit To measure voltage (Voc), fill factor (FF) and current (Isc), An IV test device is used. Experimental data, samples and comparative Examples of electrical performance are expressed as difference values ​​such as Δeff, Δvoc, ΔFF, and Δısc. Definitions. 25 Table 2 Suns-Voc (Mv) Δeff (%) Δvoc (mV) Δisc (mA) ΔFF (%) Example 14 723 0.00 0.00 0.00 0.00 Example 15 727 0.06 2.5 –6.1 0.0 Example 16 731 0.12 4.5 15.2 –0.2 22 Example 17 727 0.10 3.5 13.8 –0.1 Example 18 729 –0.05 1.1 –11.9 –0.2 Example 19 723 –0.07 –2.4 –16.1 0.1 Example 20 722 –0.07 –0.7 –5.9 –0.1 Example 21 728 0.03 2.6 –0.2 –0.20 Example 22 727 0.05 2.1 2.8 –0.08 Example 23 723 –0.06 0.3 –2.1 –0.20 Example 24 724 –0.03 0.8 10.8 –0.24 Example 25 724 –0.01 1.3 16.7 –0.30 Example 26 728 0.05 2.4 9.7 –0.20 Comparative Example 5 719 –0.20 –3.9 –14.7 –0.13 Comparative Example 6 725 –0.18 1.1 –16.7 –0.62 Comparative Example 7 721 –0.33 –2.8 –19.2 –0.68 Comparative Example 8 718 –0.59 –5.5 –15.9 –1.30 From Table 2, the solar panels in Sample 14 at 26 minutes have a performance increase of ±0.1% compared to Sample 14. The difference obtained can be learned. Comparative Examples When 5% is compared with 8%, this The %conductive paste composition in the %application examples, low carrier recombination By combining the paste composition with laser-strengthened contact improvement, open circuit 5 It can significantly increase the voltage and conversion efficiency; this is beneficial in this application. For the provided conductive paste composition, TOPCon structured solar panel side It shows that the metallization effect can significantly improve. Comparative Examples 5 and 6 show worse effects than those in the examples. The reason for this is... The percentage (Pb+B%) / B cation ratio in the glass powder corresponding to Comparative Example 5 is very high, at 10. due to its high and stronger corrosive capacity, at open circuit voltage This leads to loss. Comparative Example: 6 min % (Pb+B%) / B cation ratio is very low. because of this, %y% b%r electrical contact obtaining %y% very weak abrasive ability Glass dust forms, which causes a significant loss in FF. Furthermore, In Comparative Examples 7 and 8, the amount of TeO2 added to the glass fr%t%ne is 15 23 Because it is very high, the glass fluidity is very strong, which affects sintering. It causes excessive damage to the corrosion layer and leads to a loss in open circuit voltage. Example 27 %la 30 and Comparative Example 9 are given. For Example 27 %la 30, the sun... The preparation process of the batteries is the same as in Example 14. The difference is that for Examples 27 and 30, the conductor is 5. It lies in the paste composition; this composition also contains a filler material, and the filler The material uses aluminum powder with an average particle size of 2 μm. Conductive paste. Since aluminum powder has been added to the composition, the total weight percentage must be 100%. To ensure this, the amount of silver powder in the conductive component needs to be adjusted. Comparative Example 9, except that the amount of added aluminum powder exceeds 1%, is similar to Example 10. It is similar to 27. Specific amounts and test results are shown in Table 3. Table 3 Example Glass Frit (wt%) Aluminum Dust (wt%) Suns- Voc (mV) Δeff (%) Δvo c (mV) Disc (mA) ΔFF (%) Example 26 1.5 / 723 0.00 0.00 0.00 0.0 0 Example 27 1.5 0.25 729 – 0.02 1.5 –12.7 – 0.2 Example 28 1.5 0.50 730 – 0.07 3.8 – 3.7 – 0.7 Example 29 1.5 0.75 732 – 0.24 2.5 1.8 – 1.1 Example 30 1.5 1 731 – 0.41 2.7 –10.2 – 1.6 Comparative Example 9 1.5 1.25 731 – 0.52 2.8 –10.1 – 2.0 From Table 3, we can further improve the open-circuit voltage using carrier recombination. It can be learned that small amounts of aluminum powder can be added to reduce the amount from 0% to 1%. Adding aluminum powder in proportion to weight further reduces recombination, thus making it clearer. 24 It can improve the circuit voltage. Because during the sintering process at high temperatures Aluminum oxide, formed by adding a small amount of aluminum powder, Partially molten glass can be incorporated into the fryer during sintering. In the molten glass fryer... Increasing the amount of aluminum oxide increases the fluidity and corrosiveness of the glass melt. By reducing it, it reduces the damage to the passivation layer. However, aluminum 5 Aluminum powder is not suitable for adding in large quantities because of its filling capacity. This can significantly reduce the factor and therefore decrease productivity. In Table 3, Al It can be learned that FF loss increases with increasing powder content. Comparative Example 9's Since the aluminum powder content is more than 1%, the loss in the FF is very significant and it is an open circuit. This cannot be compensated for by voltage gains, resulting in a significant loss of efficiency. 10 The amount of aluminum oxide that can be included in different glass frit melts may vary. Example 31 and Comparative Examples 10 and 11 are given. The solar cell in Example 31... The preparation process is the same as in Example 14. The difference is that in Example 31, the amount of glass fryer is 3%. The comparative example is that the glass fr% concentration at 10 minutes is 4.5%, exceeding the specified range. 15 Comparative Example 11, a commercially available silver-aluminum paste It shows %3 to %7 glass frit, %1 to %2 aluminum powder and approximately 10% organic (Carrier content; the rest is silver powder). For the specified amount and relevant test results. See Table 4. Table 4 20 Example Pine Frit (wt%) Suns-Voc (mV) Δeff (%) Δvoc (mV) Disc (mA) ΔFF (%) Example 30 1.5 723 0.00 0.00 0.00 0.00 Example 31 3.0 723 –0.04 –2.9 –0.5 0.2 Comparative Example 10 4.5 719 –0.27 –6.1 –0.9 –0.2 Comparative Example 11 / 719 –0.35 –5.4 –41.7 –0.3 From Table 4, commercially available high-efficiency silver-aluminum paste In comparison, the %conductive paste composition used in this application is the Suns-Voc in Table 4. As shown in the results, carrier recombination decreased significantly. 25 It can be learned from what it shows. This effect is laser-strengthened contact after sintering. After the %y%lest%rme %slem%, a significant %y%rization in open circuit voltage and more than 0.3% The goal is to achieve an increase in efficiency. From the data in Comparative Example 10, glass fr%t An increase in the amount up to 4.5%, as shown by the loss of Suns-Voc, indicates passivation. It can be learned that this causes an increase in the damage to the glass fr%t layer. Therefore, glass fr%t The amount should be between 0.5% and 4%. Additionally, commercially available high-efficiency silver-aluminum paste. %k% comparison example prepared using. Two examples for preparing solar energy. The process is the same as Sample 14, except for the difference in post-sintering processing. Test For the results, see Table 5. Table 5 10 Period Δeff (%) Δvoc (Mv) Disc (mA) ΔFF (%) Example 32 Sintering + Laser healing contact development 0 0 0 0 Available on the market high efficiency silver-aluminum paste Sinting –0.35 –5.4 –41.7 –0.3 Sintering + Laser healing contact development –0.37 –5.8 –43.8 –0.3 From Table 5, commercially available high-efficiency silver-aluminum paste The solar panel prepared after sintering using laser-enhanced contact It is understood that it did not show a greater increase in efficiency with the %y%lest%rmes%. Therefore, these 15 In practice, to achieve higher solar conversion efficiency, lasers are used. enhanced contact improvement process improved conductive paste composition It can be seen that it is required. In the examples mentioned above, the explanation of each example has its own specific focus. There are points. For a part that is not explained in detail in one example, the other See the relevant explanations in the examples. Above, the conductive paste composition provided in the examples of this application is for solar panels. The preparation method and solar panel details are explained in detail, and this application is 25. 26 Principles and applications are explained using specific examples. Above Examples and applications, the technical solutions and fundamental ideas of this application. It has been used to help understand. A specialist in the field, the above. The technical solutions explained in the examples may be modified or some technical It should be understood that other features can be substituted for the features. However, the relevant technique 5 These changes or replacements, made without deviating from the essence of the solutions, are part of the application. It is within the scope. 15 25

Claims

27 Requests 1. It is a conductive paste compound containing 0.5% to 4% glass by total weight. fr.t, 80% to 92% conductive components and 7% to 16% organic medium. It contains; here, glass fr.t oxides are included, and according to the molar percentages of the oxides, 5 Glass fr.t contains 20% to 50% B2O3 and also 15% to 50% PbO. or 15% to 50% B2O3 or a mixture of 15% to 50% PbO and B2O3 ...contains; and here the sum of the cation contents of PbO and B.2O3 is the sum of B2O3's cation contents. The cation content ratio is between 0.30 and 1.

25.

2. According to claim 1, the conductive paste composition is based on the molar percentages of the oxides, glass fr.tnn also contains br cr. additive. .contains, brc. additive.nn content 18% less than or equal to mole and the first additive is L.2O, Al2O3, ZnO, S.O2, SeO2 It is a compound from which one or more of a group consisting of TeO2 have been selected.

3. According to claim 2, the conductive paste composition is, according to the molar percentages of the oxides, firstly... An additive is a component that satisfies at least one of the following conditions: a) Brnc. additive. L.2O content and L.2O content is less than or equal to 15 mol%; b) Brnc. additive. Al2O3 content and Al2O3 content less than or equal to 10 mol%; c) Brnc. additive. ZnO content and ZnO content less than or equal to 18 mol%; 20 d) Brnc. additive. S.O2 content and S.O2 content is less than or equal to 15 mol%; e) Brand additive. SeO2 content and SeO2 content less than 15 mol% or less. e.tt.r; and f) Brnc. additive. TeO2 content and TeO2 content is less than or equal to 15 mol%.

4. According to claim 1, the conductive paste composition is based on the mole percentages of the glass furnace oxides. 0% to 15 mol% L.2O, 0% to 10 mol% Al2O3, 0% to 18 mol% ZnO and 0 to 15 mol% S.O2 .çermes.n. de .çer.r.

5. According to claim 5, the conductive paste composition is 30% according to the mole percentages of the glass fr oxides. Contains less than or equal to 5 mol% of a secondary additive. and secondary additive It is a group consisting of AgO2, Ag2O, AgO, Na2O, K2O, MgO, CaO, and BaO. This also includes having one or more items selected. 28 6. According to claim 1, the conductive paste component is 1% of the total component weight. small or equal amount of filler material. .contains and filler material, aluminum powder, silicone powder and at least one component selected from a group consisting of aluminum-silicon alloy powder It is formed.

7. According to claim 6, the conductive paste component and the filler in the conductive paste component are 5. where the weight percentage of the substance is greater than 0% and less than or equal to 1%. b.leş.md.r.

8. According to claim 6, the conductive paste component and the filler material's Dv50 value is 1. μm .le is between 4 μm and Dv50'n.n, the cumulative volume of the filler material is 10 μm . It is a component that represents the particle size where the percentage reaches 50%.

9. According to claim 1, the conductive paste component is silver, and the conductive component is silver. alloys, selected from a group consisting of silver oxides and silver salts, one or 15 a component consisting of more components 10. According to claim 1, the conductive paste component is the first conductive structure in a solar panel. (20) is used to create; solar plate, br substrate (101) and the substrate (101) a passivation layer (103) located on one side; and solar plan 20 During the s.intering process, the conductive paste component forms the first conductive structure (20) can penetrate the passivation layer (103) to form.

11. According to claim 10, the conductive paste is a semi-containing substrate (101) with added nt.p. .contains a conductive substrate. 25 12. The following steps are a method for preparing a solar panel: A substrate (101), a pt.p. additive layer (102) and a pasteurization layer (103) A base plate (10) containing . is provided and a pt.p. additive layer (102), substrate (101) 30 and is located between the pasteurization layer (103); 1. to 11. Any conductive paste component specified in the requirements. It is applied to the pasteurization layer (103); On the base plate (10) on which conductive paste compound has been applied. s.nterleme .sert..lr, thus .conductive paste c.mel.msnerleme .sert. 35 29 during this process, by eroding the passivation layer (103), the conductive structure (20) it creates; and To obtain solar plan, laser-enhanced on the base plate (10). br contact optimization process is performed 13. Method for preparing the solar plan according to claim 12, and the conductive paste component. The step of applying the pasteurization layer (103) includes the following: The conductive paste composition must have at least one passivation layer (103) on its surface. The application of a patterned design to the part.

14. Method of preparing the solar plan according to claim 12, and on the base plate (10). It includes the step of performing laser-enhanced contact optimization. Applying reverse polarization to the base plate (10) and simultaneously turning the conductor To create an induced current in the structure (20), on the base plate (10). Laser scanning is performed. 15 15. Method of preparing the solar plan according to claim 14, and which meets the following conditions. az brn meets: g) The solar panel has a refractive error and reverse polarization refraction. It is lower than the voltage; 20 h) The duration of the laser scan is between 1 ms and 100 ms; and The induced current is between 100 A and 1000 A.

16. 1 .la 11. Made from the conductive paste composition specified in any of the claims. brnc. .conductive structure (20) .containing br solar pldr 25 17. Solar plan, 12. to 15. Using the method specified in any of the claims. produce.lr 18.

16. to 17. Any of the requests mentioned is for a solar panel and tunnel oxidation 30. a solar panel containing a past.flash.r.lm.sh contact structure.

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