Polishing pad, preparation method thereof and preparation method of semiconductor device using the same

Abstract

According to embodiments of the present invention, there are provided a polishing pad, a process for preparing a polishing pad, and a process for preparing a semiconductor device using the polishing pad. The polishing pad comprises a sub pad and a top pad disposed on the sub pad and comprising a first region and a second region having different densities, wherein the difference between the density of the first region and the density of the second region is 0.03 g / cm3 or more. A high polishing rate can be provided in the central region of an object to be polished, and enhanced polishing flatness can be provided in the edge region of the object to be polished.