Oxide sintered bodies, sputtering targets, oxide films, thin-film transistors, and electronic devices

Abstract

This invention provides an oxide sintered body that reduces color unevenness and white spot formation, a sputtering target comprising the oxide sintered body, an oxide film using the sputtering target, a thin-film transistor comprising the oxide film, and an electronic device comprising the thin-film transistor. The invention provides an oxide sintered body comprising In, a specified X element or Z element as a main component, wherein the atomic ratio of In, Ga, Al, and the aforementioned X element or Z element satisfies specified conditions, and comprising a ferromanganese crystalline phase and a crystalline phase in which diffraction peaks are observed within the range of incident angles (2θ) from (A) to (C) below, and no diffraction peaks are observed within at least one incident angle (2θ) of (G') and (J) below. 36°~39° … (A) 53°~56° … (B) 62°~66° … (C) 14°~16° … (G’) 8°~10° … (J).