Carbon and silicone enriched new high-chi block copolymers of novel architectures for thin-film self-assembly applications

Abstract

Described is a block copolymer of structure (I) comprising a first copolymer block segment A prepared by anionic polymerization, a second polymer block segments B, prepared by metal catalyzed ring opening polymerization, a linking moiety Z between said first copolymer block segment A, and said second polymer block segment B, and a first and second end groups E1 and E2. Also described is a composition comprised the copolymer of structure (I) and using said composition in lithographic processes which employ self-assembly or directed self-assembly (DSA) in the manufacture of IC devices. (I)