Crystalline oxide semiconductor thin films and sputtering targets

TW202627137APending Publication Date: 2026-07-01KOBELCO RES INST INC
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Patent Information

Application Number
TW115107414
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-11-08
Filing Date
2025-01-21
Publication Date
2026-07-01
Patent Text Reader

Abstract

The crystalline oxide semiconductor thin film disclosed herein contains In and B elements, wherein the ratio of the In content (atomic %) to the B content (atomic %) satisfies the following formula 1, and the average grain size on the surface observed by electron microscopy is 0.25 μm or more. B / (In+B)≤0.20 ····(1)
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