Method of manufacturing a nanoimprint lithography replica and method of manufacturing a semiconductor device

Abstract

Method of manufacturing a nanoimprint lithography replica includes depositing a first resist layer over a substrate and selectively exposing the first resist layer to a first actinic radiation. The selectively exposed first resist layer is developed to form a pattern in the first resist layer. The pattern in the first resist layer is extended into the substrate to form a mold in the substrate. The first resist layer is removed from the substrate. A second resist layer deposited over a replica blank. The second resist layer is contacted with the mold. The second resist layer is exposed to a second actinic radiation. The mold and the exposed second resist layer are separated. A pattern is formed in the exposed second resist layer. The pattern in the second resist layer is extended into the replica blank, and the second resist layer is removed from the replica blank to form a replica.