Read-only memory (ROM) device and method

Abstract

A read-only memory (ROM) device includes an active region extending along a first direction, and a plurality of gates extending across and over the active region, along a second direction transverse to the first direction. The plurality of gates correspondingly configures, together with the active region, a plurality of transistors. Each of the plurality of transistors is configured to store a datum. The active region extends continuously across and under more than four conductive gates among the plurality of gates.