Plasma treatment equipment and power supply system

Abstract

This invention provides a technique for improving the plasma processing performance of a plasma processing apparatus. The plasma processing apparatus of this invention includes a chamber, a substrate support, a lower electrode, a refrigerant flow path, a gas supply section, an RF signal generator, and a voltage pulse signal generator. The RF signal has a first electrical level in a first period included in each of a plurality of cycles, a second electrical level in a second period included in each of a plurality of cycles, and a third electrical level in a third period included in each of a plurality of cycles, wherein the second and third electrical levels are lower than the first electrical level. The voltage pulse signal has a reference voltage level in the first period, a sequence of voltage pulses having the first voltage level in the second period, and a reference voltage level in the third period, wherein the absolute value of the first voltage level is greater than the absolute value of the reference voltage level.