Semiconductor devices

Abstract

In the semiconductor device of the present invention, a first insulator is located further toward a first direction than a first substrate. A first conductor is located in the first insulator. A second substrate is located further toward a first direction than the first insulator. A first well region has a first conductivity type, is disposed in the second substrate, and has a first impurity concentration. A first impurity region has a first conductivity type, is connected to the first well region in the second substrate in a second direction than the first well region, and has a second impurity concentration of at least 4 times and less than 1 × 10⁸ times the first impurity concentration. A second well region has a second conductivity type, is connected to the first impurity region in the second substrate in a second direction than the first impurity region.