Semiconductor device

Abstract

A semiconductor device may include: a substrate; conductive lines spaced apart from each other in a first horizontal direction, the conductive lines extending in a second horizontal direction intersecting the first horizontal direction; at least one gate electrode between the conductive lines in the first horizontal direction, the at least one gate electrode extending in a vertical direction; channel layers surrounding the at least one gate electrode, the channel layers spaced apart from each other in the vertical direction; a dielectric layer between the channel layers and the at least one gate electrode; a metal layer between the channel layers and the dielectric layer; a gate insulating layer between the channel layers and the metal layer; and at least one interfacial layer surrounding the at least one gate electrode, the at least one interfacial layer being between the channel layers and the at least one gate electrode.