Semiconductor structure and methods of forming the same

Abstract

A method includes forming a multilayer stack, which includes a plurality of semiconductor nanostructures and a plurality of sacrificial layers. The plurality of semiconductor nanostructures and the plurality of sacrificial layers are located alternatingly. The method further includes laterally recessing the plurality of sacrificial layers to form lateral recesses, performing a doping process to dope a first dopant into the lateral recesses, forming inner spacers in the lateral recesses, performing an anneal process to diffuse the first dopant into the inner spacers, and forming a source / drain region contacting the inner spacers, wherein the source / drain region is electrically coupled to the plurality of semiconductor nanostructures.