Method and system for transistor with combined source and well contact

Abstract

A metal-oxide-semiconductor (MOS) transistor includes a substrate including a well region, an insulator layer coupled to the substrate, and a source including a source region, a source contact passing through the insulator layer and the source region, and an ohmic contact disposed in the well region. The MOS transistor also includes a gate region including a gate insulator layer and a gate contact and a drain including a drain region and a drain contact passing through the insulator layer to the drain region. The MOS transistor can be an LDMOS transistor, for example, an LNDMOS or LPDMOS transistor.