Design and manufacture of improved power devices

Abstract

A metal-insulator-semiconductor field effect transistor is provided. The metal-insulator-semiconductor field effect transistor comprises a unit cell on a SiC substrate. The unit cell comprises a trench in a well region having a second conduction type, a source region of a first conduction type, a first sinker region having a second conduction type, and a second sinker region having the second conduction type. The first sinker region has a depth that is equal to or greater than a depth of the well region. Each of the first sinker region and the second sinker region is in contact with a region having a first conduction type to form a p-n junction.