Semiconductor device

TW202628670APending Publication Date: 2026-07-01SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW114112142
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-09-13
Filing Date
2025-03-28
Publication Date
2026-07-01
Patent Text Reader

Abstract

A semiconductor device includes an active pattern spaced apart in a first direction, and extending in a second direction different from the first direction; a lower channel pattern and a lower source / drain pattern located on the active pattern and alternately arranged in the second direction; an upper channel pattern on the lower channel pattern, and an upper source / drain pattern on the lower source / drain pattern; a gate pattern extending in the first direction and located on the lower channel pattern and the upper channel pattern; a separation pattern located between the lower source / drain pattern and the upper source / drain pattern and another lower source / drain pattern and another upper source / drain pattern in the second direction; and a gate cutting pattern extending in the second direction across the gate pattern to separate the gate pattern.
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