Semiconductor device
TW202628670APending Publication Date: 2026-07-01SAMSUNG ELECTRONICS CO LTD
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Patent Information
- Application Number
- TW114112142
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-09-13
- Filing Date
- 2025-03-28
- Publication Date
- 2026-07-01
Abstract
A semiconductor device includes an active pattern spaced apart in a first direction, and extending in a second direction different from the first direction; a lower channel pattern and a lower source / drain pattern located on the active pattern and alternately arranged in the second direction; an upper channel pattern on the lower channel pattern, and an upper source / drain pattern on the lower source / drain pattern; a gate pattern extending in the first direction and located on the lower channel pattern and the upper channel pattern; a separation pattern located between the lower source / drain pattern and the upper source / drain pattern and another lower source / drain pattern and another upper source / drain pattern in the second direction; and a gate cutting pattern extending in the second direction across the gate pattern to separate the gate pattern.
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