Series phase change material switches with off-state voltage equalizers and method for forming the same

TW202628784APending Publication Date: 2026-07-01TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114115822
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-26
Filing Date
2025-04-25
Publication Date
2026-07-01
Patent Text Reader

Abstract

A device structure may be formed by: forming dielectric layers with metal interconnect structures formed therein on a substrate; forming at least one heater element over the dielectric layers, each of the at least one heater element including a strip portion, a first terminal portion, and a second terminal portion; forming at least one heater-cover plate stack including a electrically-insulating and thermally-conductive plate including a first material and a semiconducting plate including a second material having a lower electrical resistivity than the first material over a one of the at least one heater element; and depositing and patterning a phase change material layer over the at least one heater-cover plate stack.
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