Semiconductor device and method for fabricating the same

Abstract

The present application discloses a semiconductor device and a method for fabricating the same. The semiconductor device comprises a substrate, a gate structure, a spacer structure, and a sealing layer. The gate structure is positioned on the substrate. The spacer structure includes a first spacer, a second spacer, a third spacer, and an air gap. The first spacer is disposed on a sidewall of the gate structure, and the air gap is located between the first spacer and the second spacer. The air gap is enclosed by the first spacer, the second spacer, the third spacer, and the sealing layer.