Semiconductor device and method for selective EMI shielding using a mask

Abstract

A semiconductor device is made by providing a strip substrate including a plurality of units. A hole is formed in the strip substrate. An encapsulant is deposited over the strip substrate. A mask is disposed over the strip substrate and encapsulant with a leg of the mask disposed in the hole. A shielding layer is formed over the mask and strip substrate. The mask is removed after forming the shielding layer. The strip substrate is singulated to separate the plurality of units from each other after forming the shielding layer.