Nanostructure formed by a method for selective etching of nanostructure

Abstract

The present invention relates to a nanostructure formed by a method for selective etching of a nanostructure. The method comprising: providing a substrate having a first layer and a resist layer, wherein the first layer is between the resist layer and the substrate; lithography patterning the resist layer, thereby exposing areas of the first layer; etching the exposed areas of the first layer, thereby forming first recesses in the first layer; removing the remaining resist layer, thereby forming ridges of the first layer between the first recesses of the first layer; subjecting the first layer to a first dry etching process comprising subjecting the first layer to a particle beam whereby selective etching of the ridges of the first layer relative to walls of the first recesses in the layer is achieved such that second recesses in the first layer are formed, the second recesses in the first layer having openings at the ridges of the first layer.

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