Chemical mechanical polishing slurry and preparation method and uses thereof

Abstract

This invention provides a chemical mechanical polishing (CMP) slurry, its preparation method, and its applications. The CMP slurry comprises: abrasive particles, an oxidant, a corrosion inhibitor, a pH adjuster, a polishing accelerator, and water. By introducing a corrosion inhibitor into the CMP slurry, this invention effectively suppresses the corrosion of gallium arsenide (GaAs) wafers and achieves excellent polishing results. The removal rate of GaAs can reach 10,000 Å / min or higher, the post-polishing surface roughness can be as low as 0.32 nm, and the static corrosion rate can be as low as 125.31 Å / min. This achieves high polishing rates and good surface roughness while maintaining a low static corrosion rate and low production costs, enabling efficient and stable polishing of GaAs.

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