Method for filling a gap on a substrate with a carboncontaining material and semiconductor processing apparatus

Abstract

Methods for filling a gap on a substrate with a carbon-containing material are disclosed. Exemplary method includes providing a substrate comprising a gap into a reaction chamber and executing a plurality of deposition cycles. Each deposition cycle comprises providing a first precursor into the reaction chamber in vapor phase and providing a reactive species into the reaction chamber, wherein the first precursor comprises carbon.

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