Plasma electrodes that can move within the process chamber of a CVD reactor

Abstract

The present invention relates to an apparatus for depositing a layer on a substrate (1) in a process chamber (4) arranged in the shell of a CVD reactor (3), the apparatus having: a gas inlet member (5) for introducing gas into the process chamber (4); an outlet surface (8) having a large number of outlet openings (6, 7) through which the gas can flow into the process chamber (4); at least one plasma electrode (10) energized by a plasma generator (9), the plasma electrode being configured to apply energy to a gaseous starting material to generate plasma, wherein the plasma electrode (10) is movably arranged in the process chamber (4).

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