Composition for selective etching of silicon oxide

TW202629848APending Publication Date: 2026-07-16KC TECH CO LTD
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
KC TECH CO LTD
Filing Date
2025-11-28
Publication Date
2026-07-16
Patent Text Reader

Abstract

The present invention relates to a composition for etching, and more specifically, the composition for etching comprises: an etchant comprising a fluorine compound; a first inhibitor comprising an aromatic ring compound having a sulfonylurea group or a polymer thereof; and a second inhibitor comprising a heterocyclic compound having an aromatic ring substituent having 3 to 20 carbon atoms, the composition for etching having a pH of 1.5 to 6. none
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