Semiconductor structure

Abstract

The present disclosure relates to a semiconductor structure formed on a non-conductive substrate designed for high-performance probing in semiconductor testing applications. The semiconductor structure comprises multiple metal and dielectric layer, integrated passive devices (IPDs), and GND (ground) shielding layers to ensure precise control of signal impedance and minimize electromagnetic interference (EMI) during high-frequency testing. The structure includes a vertically connected metal core through a via structure surrounded by barrier dielectrics, allowing vertical interconnection between signal layers while preventing crosstalk. Additionally, guide holes plated with conductive metals establish shorted paths for loopback needles, thereby providing shortened loopback path for enhanced signal transmission and high-frequency operation. The design further incorporates LC devices (capacitors and inductors) embedded within the stack-up, facilitating signal modulation and power distribution. The integrated system supports stable and efficient high-frequency operations, offering enhanced signal integrity and performance reliability during probe testing of semiconductor devices.