Manufacturing method of reflective photomask substrate, reflective photomask and semiconductor device

Abstract

This invention provides a reflective photomask substrate that further reduces the shadowing effect of reflective photomasks and can form fine and high-precision phase-shifting patterns. The present invention is a reflective photomask substrate characterized by having, sequentially, multiple reflective films and phase-shifting films that shift the phase of EUV light on a substrate. The phase-shifting films have a first layer and a second layer. The first layer contains a material containing at least one element selected from tantalum (Ta) and chromium (Cr). The second layer contains a metal material containing at least one element selected from ruthenium (Ru), chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).

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