Photomask, measurement method, and exposure method

Abstract

A photomask, used in cases where at least a portion of a substrate having a resist layer is subjected to overlapping exposure, comprises: a mark transferred to the resist layer; the mark having a first pattern extending in a first direction and varying in width in a second direction intersecting the first direction, including a width W1 and a width W2; the width W1 refers to the width at which a resist image formed by the first and second exposure lights is formed on the resist layer when there is a second directional deviation between the position of a first region patterned by the mark and the position of a second region patterned by the mark and superimposed on the first region; the width W2 refers to the width at which a resist image formed by the first and second exposure lights is not formed on the resist layer when there is a second directional deviation between the position of the first region and the position of the second region.