Memory device generating per-pin reference voltage

TW202630392APending Publication Date: 2026-07-16SK HYNIX INC
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
SK HYNIX INC
Filing Date
2025-11-12
Publication Date
2026-07-16

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Abstract

A memory device comprises a plurality of reference voltage generators, each of which corresponds to a plurality of data pins and generates a reference voltage for each of the corresponding data pins, with each of the plurality of reference voltage generators comprising a voltage divider that divides a power supply voltage into a plurality of divided voltages; a control logic that receives a first code indicating internal reference voltage level information and a second code indicating offset voltage information for a corresponding data pin, and that generates a control code based on the first and second codes; and a reference voltage selector comprising tree-structured transfer gates that select one of the plurality of divided voltages in response to the control code and output the selected one as a reference voltage.
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