Three-dimensional memory device, method of forming thereof and system for thereof

Abstract

A system and a method for a monolithic wordline (WL) are disclosed. A structure includes a conductive element and a first dielectric. The conductive element connects an array WL in an array area at a first edge to a pad WL in a pad area at a second edge. The conductive element is disposed in an interconnecting area between the first edge and the second edge. The first dielectric is disposed on the array WL, the conductive element, and the pad WL. The first dielectric has a dielectric surface extending from the interconnecting area to the pad area. The conductive element and the first dielectric form a monolithic WL from the array WL and the pad WL through the second edge.