Growth of gate oxide layer with silicon nitride and conversion
TW202630732APending Publication Date: 2026-07-16APPLIED MATERIALS INC
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- APPLIED MATERIALS INC
- Filing Date
- 2025-10-13
- Publication Date
- 2026-07-16
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Abstract
A method for forming an oxide layer includes forming at least a portion of a gate oxide layer on inner surfaces of an opening, forming a silicon nitride capping layer on the portion of the gate oxide layer, and performing a conversion process to at least partially oxidize the silicon nitride capping layer, forming a nitrogen-doped gate oxide layer.
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