Semiconductor devices

Abstract

In one embodiment of the present invention, a semiconductor device with improved yield is provided. According to the embodiment, the semiconductor device includes a first wafer and a second wafer. The first wafer includes: a first wiring layer extending along a first direction; and a first electrode including a first contact plug and a first bonding pad disposed on the first wiring layer. The second wafer includes: a second wiring layer extending along a second direction intersecting the first direction; and a second electrode including a second contact plug disposed on the second wiring layer and a second bonding pad adhered to the first bonding pad. A first length of the first contact plug in the first direction is longer than a second length of the first contact plug in the second direction. A third length of the second contact plug in the second direction is longer than a fourth length of the second contact plug in the first direction.