Cmos-compatible resistive random-access memory (RRAM) devices

Abstract

This invention provides an apparatus including a CMOS-compatible resistive random access memory (RRAM) device. The RRAM device may include a bottom electrode, a switching oxide device comprising at least one transition metal oxide, a via structure fabricated on the switching oxide device, and a top electrode fabricated within the via structure and above the top surface of the via structure. The via structure includes a via fabricated in a hard photomask layer. The RRAM device may further include a first spacer layer enclosing the top electrode and the hard photomask layer. In some embodiments, the RRAM device may further include a second spacer layer enclosing the first spacer layer, the bottom electrode, and the switching oxide device.