Semiconductor devices and methods for manufacturing semiconductor devices

Abstract

The objective of this invention is to provide a semiconductor device that can improve yield and a method for manufacturing the semiconductor device. The semiconductor device of the present invention comprises: a substrate having a first surface and a second surface opposite to the first surface; a first nitride semiconductor layer having a third surface in contact with the second surface and a fourth surface opposite to the third surface, and a recess being formed on the fourth surface; a second nitride semiconductor layer disposed in the recess; and a first metal layer disposed on the second nitride semiconductor layer; and a through-hole being formed in the substrate, the first nitride semiconductor layer and the second nitride semiconductor layer, the through-hole penetrating the substrate, the first nitride semiconductor layer and the second nitride semiconductor layer and reaching the first metal layer, the semiconductor device having a second metal layer in contact with the first metal layer and covering the first surface and the inner wall surface of the through-hole, the first metal layer comprising cobalt, and the second nitride semiconductor layer containing impurity atoms at a concentration of 1.0 × 10¹⁸ cm⁻³ or higher.