Semiconductor device and method of forming thereof

Abstract

A semiconductor device and the method of forming the same are provided. The semiconductor device may include a source / drain region, a first nanostructure along a sidewall of the source / drain region, a gate structure wrapping around the first nanostructure, a first gate spacer along a sidewall of a first portion of the gate structure, a first dielectric layer over the source / drain region and the gate structure, a first conductive contact extending through the first dielectric layer and electrically connected to the source / drain region, and a first dielectric liner along a sidewall of the first conductive contact. The first dielectric liner may extend from a level of a top surface of the first conductive contact to a top surface of the source / drain region. The first dielectric liner may be in contact with a sidewall of the first gate spacer.