Method of forming semiconductor device, method of forming thin film transistor, and semiconductor structure

Abstract

A method of forming a semiconductor device includes forming a gate electrode, a source electrode, and a drain electrode within a first dielectric material layer, forming a gate dielectric layer over the first dielectric material layer, forming source and drain contact via structures through the gate dielectric layer on the source and drain electrodes, and forming an active layer over the gate dielectric layer. End portions of the active layer may be converted into a source region and a drain region by implanting electrical dopants. A semiconductor structure includes a gate electrode, source and drain electrodes within a first dielectric material layer, a gate dielectric layer overlying the first dielectric material layer, source and drain contact via structures vertically extending through the gate dielectric layer and contacting the source and drain electrodes, and an active layer overlying the gate dielectric layer.