Semiconductor device and method for fabricating the same
TW202630779APending Publication Date: 2026-07-16SK HYNIX INC
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Patent Information
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- SK HYNIX INC
- Filing Date
- 2025-10-14
- Publication Date
- 2026-07-16
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Abstract
A semiconductor device includes a first conductive line including an upper portion of a carbon-based thin layer; a variable resistance layer disposed over the first conductive line; a selector layer disposed over the variable resistance layer, with a carbon-based thin layer disposed thereon; and a second conductive line disposed over the selector layer.
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