Substrate processing method and substrate processing apparatus

Abstract

This invention provides a technique for manufacturing transistors with excellent properties. According to one aspect of this invention, a substrate processing method includes a step of forming an oxide film and a step of forming a gate insulating film. In the oxide film formation step, the surface of silicon, which will become the channel region of the transistor, is treated with an oxidizing aqueous solution containing hydrogen peroxide and an alkaline liquid to form an oxide film on the surface of the silicon. In the gate insulating film formation step, the gate insulating film of the transistor is formed on the surface of the oxide film.

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