Semiconductor device and method of fabricating the same

Abstract

A semiconductor device includes a first source / drain structure; a second source / drain structure spaced from the first source / drain structure in a first direction; a first portion of a first channel structure adjacent the first source / drain structure at a first height; a second portion of the first channel structure adjacent the second source / drain structure, the second portion of the first channel structure being at the first height and spaced from the first portion of the first channel structure in the first direction; an insulating structure between the first and second portions of the first channel structure, the insulating structure being at the first height and having a thickness that is at least as thick as either of the first and second portions of the first channel structure; and a second channel structure between the first and second source / drain structures at a second height, the second height being less than the first height.