Semiconductor device

Abstract

Provided is a semiconductor device including a first channel pattern and a second channel pattern at least partially overlapping, a first gate pattern between the first channel pattern and the second channel pattern, and at least partially overlapping the first channel pattern and the second channel pattern, a first connection conductive pattern and a second connection conductive pattern spaced apart from each other in a first direction, and the first channel pattern, the second channel pattern, and the first gate pattern between the first and second connection conductive patterns, and a first source / drain pattern connected to the first channel pattern and the second channel pattern. The first connection conductive pattern and the second connection conductive pattern are electrically connected to the first gate pattern.