Electrostatic discharge protection circuit, silicon controlled rectifier, and method for protecting against electrostatic discharge

TW202630815APending Publication Date: 2026-07-16SAMSUNG ELECTRONICS CO LTD +1
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
SAMSUNG ELECTRONICS CO LTD
Filing Date
2025-12-15
Publication Date
2026-07-16

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    Figure TWG2TA001069170_003
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Abstract

There is provided an Electrostatic Discharge (ESD) protection circuit including a Silicon Controlled Rectifier (SCR). The SCR includes an N+ diffusion region (Npick terminal), formed in an n-well (NW) region, and connected to a source terminal of a P-channel Metal Oxide Semiconductor (PMOS) transistor of an inverter, and a P+ diffusion region (Ptrig terminal), formed in a p-type substrate, and connected to a source terminal of an N-channel Metal Oxide Semiconductor (NMOS) transistor of the inverter.
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