Photocathode device for sub-nanosecond gating and method for the manufacturing thereof, and visible light detection device

TW202630817APending Publication Date: 2026-07-16PHOTONIS NETHERLANDS
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Patent Information

Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
PHOTONIS NETHERLANDS
Filing Date
2025-11-14
Publication Date
2026-07-16

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Abstract

Photocathode device for sub-nanosecond gating comprising an active photo-emissions region surrounded by an electrode region, the device comprising: - a substrate; - a photocathode layer deposited on the substrate; wherein the device also comprises: - a conductive underlayer deposited between the substrate and the photocathode layer in the active photo-emission region and preferably in the electrode region; - a layer of aluminium oxide deposited between the conductive underlayer and the photocathode layer. Method of manufacturing of the photocathode device, and visible light detection device comprising the photocathode device.
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