High-brightness, low-leakage, and highly reliable AlGaInP yellow-green LED epitaxial wafers

Abstract

This invention discloses a high-brightness, low-leakage, and highly reliable AlGaInP yellow-green LED epitaxial wafer. The epitaxial wafer comprises, sequentially grown on a GaAs substrate, an N-type GaAs buffer layer, an N-type GaInP etch stop layer, an N-type GaAs ohmic contact layer, an N-type AlGaInP current spreading layer, an N-type electron delay layer, an N-type AlInP confinement layer, a multi-quantum well layer, a P-type AlInP confinement layer, a P-type GaP current spreading layer, and a P-type GaP ohmic contact layer. By introducing the electron delay layer, a quantum barrier thickness gradient design, and a Mg diffusion blocking layer, electron leakage and Mg diffusion are effectively suppressed, non-radiative recombination is reduced, and the luminous efficiency and high-temperature operating stability of the LED are significantly improved.

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